JP4067819B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP4067819B2
JP4067819B2 JP2001382483A JP2001382483A JP4067819B2 JP 4067819 B2 JP4067819 B2 JP 4067819B2 JP 2001382483 A JP2001382483 A JP 2001382483A JP 2001382483 A JP2001382483 A JP 2001382483A JP 4067819 B2 JP4067819 B2 JP 4067819B2
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JP
Japan
Prior art keywords
film
signal line
tft
source signal
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001382483A
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English (en)
Japanese (ja)
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JP2002318555A5 (enExample
JP2002318555A (ja
Inventor
舜平 山崎
潤 小山
麻衣 長田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001382483A priority Critical patent/JP4067819B2/ja
Publication of JP2002318555A publication Critical patent/JP2002318555A/ja
Publication of JP2002318555A5 publication Critical patent/JP2002318555A5/ja
Application granted granted Critical
Publication of JP4067819B2 publication Critical patent/JP4067819B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2001382483A 2000-12-21 2001-12-17 発光装置 Expired - Fee Related JP4067819B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001382483A JP4067819B2 (ja) 2000-12-21 2001-12-17 発光装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000388378 2000-12-21
JP2000-388378 2000-12-21
JP2001382483A JP4067819B2 (ja) 2000-12-21 2001-12-17 発光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007307801A Division JP4741569B2 (ja) 2000-12-21 2007-11-28 発光装置

Publications (3)

Publication Number Publication Date
JP2002318555A JP2002318555A (ja) 2002-10-31
JP2002318555A5 JP2002318555A5 (enExample) 2005-07-28
JP4067819B2 true JP4067819B2 (ja) 2008-03-26

Family

ID=26606250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001382483A Expired - Fee Related JP4067819B2 (ja) 2000-12-21 2001-12-17 発光装置

Country Status (1)

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JP (1) JP4067819B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005032704A (ja) * 2003-06-18 2005-02-03 Sharp Corp 表示素子および表示装置
KR100659532B1 (ko) 2003-11-28 2006-12-19 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
KR100642491B1 (ko) * 2003-12-26 2006-11-02 엘지.필립스 엘시디 주식회사 유기전계발광 소자
JP4654581B2 (ja) * 2004-01-30 2011-03-23 セイコーエプソン株式会社 Ｔｆｔ基板の製造方法
JP4583776B2 (ja) * 2004-02-13 2010-11-17 株式会社半導体エネルギー研究所 表示装置の作製方法
US7753751B2 (en) * 2004-09-29 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the display device
KR100583139B1 (ko) * 2004-10-08 2006-05-23 삼성에스디아이 주식회사 발광 표시장치
JP2006164737A (ja) * 2004-12-07 2006-06-22 Sharp Corp 表示素子、若しくはそれを備えた表示パネル及び表示装置
EP1717789B1 (en) * 2005-04-26 2016-04-13 LG Display Co., Ltd. Electro luminescence display device
JP2007187981A (ja) * 2006-01-16 2007-07-26 Toshiba Matsushita Display Technology Co Ltd 表示装置
KR20070082685A (ko) * 2006-02-17 2007-08-22 삼성전자주식회사 표시 장치 및 그 제조 방법
JP4403430B2 (ja) 2007-03-14 2010-01-27 ソニー株式会社 表示パネル及び電子機器
US20120138904A1 (en) * 2007-09-21 2012-06-07 Takahisa Shimizu Organic electroluminescence display and production method thereof
JP4853882B2 (ja) * 2009-01-28 2012-01-11 東北パイオニア株式会社 有機ｅｌ表示装置及びその製造方法
US8741677B2 (en) 2010-11-30 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
JP2013057726A (ja) * 2011-09-07 2013-03-28 Sony Corp 表示パネル、表示装置および電子機器
KR101818033B1 (ko) 2011-11-01 2018-01-16 한국전자통신연구원 플렉시블 전극 기판의 제조방법
JP5427253B2 (ja) * 2012-02-06 2014-02-26 シャープ株式会社 有機ｅｌ素子、若しくはそれを備えた表示パネル及び表示装置
JP5642841B2 (ja) * 2013-05-28 2014-12-17 シャープ株式会社 有機ｅｌ素子、若しくはそれを備えた表示パネル及び表示装置
JPWO2017158946A1 (ja) * 2016-03-18 2019-01-17 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子のパターニング方法及びパターニング装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH028821A (ja) * 1988-06-28 1990-01-12 Sharp Corp アクティブマトリックス基板
JP2846028B2 (ja) * 1990-01-18 1999-01-13 シチズン時計株式会社 液晶表示パネル基板の製造方法
JPH07110495A (ja) * 1993-10-14 1995-04-25 Hitachi Ltd アクティブマトリクス型液晶表示装置
JPH07140475A (ja) * 1993-11-16 1995-06-02 Rohm Co Ltd 液晶表示装置の配線構造
JP3297666B2 (ja) * 1994-06-02 2002-07-02 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置
JPH0945930A (ja) * 1995-07-28 1997-02-14 Sony Corp 薄膜トランジスタ及びその製造方法
JPH09106887A (ja) * 1995-08-09 1997-04-22 Citizen Watch Co Ltd 有機エレクトロルミネセンス素子およびその駆動方法
JP2776336B2 (ja) * 1995-09-26 1998-07-16 日本電気株式会社 薄膜トランジスタおよび薄膜トランジスタの製造方法
JPH09318975A (ja) * 1996-05-30 1997-12-12 Nec Corp 薄膜電界効果型トランジスタ素子アレイおよびその製造 方法
JP4472064B2 (ja) * 1998-08-31 2010-06-02 株式会社半導体エネルギー研究所 半導体装置の製造方法
KR100290913B1 (ko) * 1999-03-04 2001-05-15 김영환 고전압 소자 및 그 제조방법
JP4578611B2 (ja) * 1999-03-26 2010-11-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3480697B2 (ja) * 1999-05-10 2003-12-22 ナノックス株式会社 Ｃｏｇ型液晶表示装置の製造方法
JP4552239B2 (ja) * 1999-05-12 2010-09-29 ソニー株式会社 表示用薄膜半導体素子及び表示装置

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Publication number Publication date
JP2002318555A (ja) 2002-10-31

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