JP4046961B2 - 位置検出方法、位置検出装置、露光装置及び露光方法 - Google Patents

位置検出方法、位置検出装置、露光装置及び露光方法 Download PDF

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Publication number
JP4046961B2
JP4046961B2 JP2001266440A JP2001266440A JP4046961B2 JP 4046961 B2 JP4046961 B2 JP 4046961B2 JP 2001266440 A JP2001266440 A JP 2001266440A JP 2001266440 A JP2001266440 A JP 2001266440A JP 4046961 B2 JP4046961 B2 JP 4046961B2
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Japan
Prior art keywords
position detection
mark
detection system
alignment
measurement
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Expired - Lifetime
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JP2001266440A
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English (en)
Japanese (ja)
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JP2003077806A (ja
JP2003077806A5 (enExample
Inventor
和彦 三島
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2001266440A priority Critical patent/JP4046961B2/ja
Priority to US10/231,279 priority patent/US7019836B2/en
Publication of JP2003077806A publication Critical patent/JP2003077806A/ja
Priority to US11/102,854 priority patent/US7230706B2/en
Publication of JP2003077806A5 publication Critical patent/JP2003077806A5/ja
Application granted granted Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7092—Signal processing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2001266440A 2001-09-03 2001-09-03 位置検出方法、位置検出装置、露光装置及び露光方法 Expired - Lifetime JP4046961B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001266440A JP4046961B2 (ja) 2001-09-03 2001-09-03 位置検出方法、位置検出装置、露光装置及び露光方法
US10/231,279 US7019836B2 (en) 2001-09-03 2002-08-30 Position detection method and apparatus, and exposure method and apparatus
US11/102,854 US7230706B2 (en) 2001-09-03 2005-04-11 Position detection method and apparatus, and exposure method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001266440A JP4046961B2 (ja) 2001-09-03 2001-09-03 位置検出方法、位置検出装置、露光装置及び露光方法

Publications (3)

Publication Number Publication Date
JP2003077806A JP2003077806A (ja) 2003-03-14
JP2003077806A5 JP2003077806A5 (enExample) 2005-04-14
JP4046961B2 true JP4046961B2 (ja) 2008-02-13

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JP2001266440A Expired - Lifetime JP4046961B2 (ja) 2001-09-03 2001-09-03 位置検出方法、位置検出装置、露光装置及び露光方法

Country Status (2)

Country Link
US (2) US7019836B2 (enExample)
JP (1) JP4046961B2 (enExample)

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JP4227470B2 (ja) 2003-06-18 2009-02-18 キヤノン株式会社 位置検出方法
JP4072465B2 (ja) 2003-06-19 2008-04-09 キヤノン株式会社 位置検出方法
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JP2005166785A (ja) * 2003-12-01 2005-06-23 Canon Inc 位置検出装置及び方法、並びに、露光装置
JP2005284867A (ja) 2004-03-30 2005-10-13 Canon Inc 駆動制御装置及び方法及び露光装置
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US7609373B2 (en) * 2005-05-31 2009-10-27 Kla-Tencor Technologies Corporation Reducing variations in energy reflected from a sample due to thin film interference
US7751047B2 (en) * 2005-08-02 2010-07-06 Asml Netherlands B.V. Alignment and alignment marks
US7439001B2 (en) * 2005-08-18 2008-10-21 International Business Machines Corporation Focus blur measurement and control method
US7474401B2 (en) * 2005-09-13 2009-01-06 International Business Machines Corporation Multi-layer alignment and overlay target and measurement method
US7455939B2 (en) * 2006-07-31 2008-11-25 International Business Machines Corporation Method of improving grating test pattern for lithography monitoring and controlling
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JP5036429B2 (ja) * 2007-07-09 2012-09-26 キヤノン株式会社 位置検出装置、露光装置、デバイス製造方法及び調整方法
US7473502B1 (en) 2007-08-03 2009-01-06 International Business Machines Corporation Imaging tool calibration artifact and method
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US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
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US10890436B2 (en) 2011-07-19 2021-01-12 Kla Corporation Overlay targets with orthogonal underlayer dummyfill
JP5706861B2 (ja) 2011-10-21 2015-04-22 キヤノン株式会社 検出器、検出方法、インプリント装置及び物品製造方法
US9959610B2 (en) 2014-10-30 2018-05-01 Applied Materials, Inc. System and method to detect substrate and/or substrate support misalignment using imaging
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EP3667423B1 (en) * 2018-11-30 2024-04-03 Canon Kabushiki Kaisha Lithography apparatus, determination method, and method of manufacturing an article
WO2021047903A1 (en) * 2019-09-09 2021-03-18 Asml Holding N.V. Invariable magnification multilevel optical device with telecentric converter
CN112697703A (zh) * 2019-10-22 2021-04-23 超能高新材料股份有限公司 晶圆缺陷检测对位装置
CN110824865B (zh) * 2019-11-29 2021-06-18 中国科学院微电子研究所 对准误差测量方法及装置
CN111580359B (zh) * 2020-04-29 2021-06-18 中国科学院光电技术研究所 一种用于超分辨光刻精密掩模的智能校正装置控制系统
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Also Published As

Publication number Publication date
US7230706B2 (en) 2007-06-12
JP2003077806A (ja) 2003-03-14
US20050179898A1 (en) 2005-08-18
US20030053057A1 (en) 2003-03-20
US7019836B2 (en) 2006-03-28

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