JP4044360B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP4044360B2
JP4044360B2 JP2002117416A JP2002117416A JP4044360B2 JP 4044360 B2 JP4044360 B2 JP 4044360B2 JP 2002117416 A JP2002117416 A JP 2002117416A JP 2002117416 A JP2002117416 A JP 2002117416A JP 4044360 B2 JP4044360 B2 JP 4044360B2
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Japan
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region
impurity
gate electrode
electrode
concentration
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JP2002117416A
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Japanese (ja)
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JP2003031589A (ja
JP2003031589A5 (enExample
Inventor
里築子 長尾
昌彦 早川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2003031589A5 publication Critical patent/JP2003031589A5/ja
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JP2002117416A 2001-04-19 2002-04-19 半導体装置およびその作製方法 Expired - Fee Related JP4044360B2 (ja)

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JP2002117416A JP4044360B2 (ja) 2001-04-19 2002-04-19 半導体装置およびその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001121819 2001-04-19
JP2001-121819 2001-04-19
JP2002117416A JP4044360B2 (ja) 2001-04-19 2002-04-19 半導体装置およびその作製方法

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JP2003031589A JP2003031589A (ja) 2003-01-31
JP2003031589A5 JP2003031589A5 (enExample) 2005-08-04
JP4044360B2 true JP4044360B2 (ja) 2008-02-06

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JP2002117416A Expired - Fee Related JP4044360B2 (ja) 2001-04-19 2002-04-19 半導体装置およびその作製方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4554286B2 (ja) * 2004-06-23 2010-09-29 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP5207052B2 (ja) * 2008-08-22 2013-06-12 株式会社豊田中央研究所 接合体およびその製造方法
JP2014165310A (ja) * 2013-02-25 2014-09-08 Japan Display Inc 表示装置
CN109147576A (zh) * 2018-09-05 2019-01-04 福建华佳彩有限公司 异形切割显示面板的像素切边区域的切边方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100267755B1 (ko) * 1993-03-18 2000-10-16 김영환 박막트랜지스터 제조방법
JP4531175B2 (ja) * 1998-12-03 2010-08-25 株式会社半導体エネルギー研究所 半導体装置の作製方法

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