JP2003031589A5 - - Google Patents
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- Publication number
- JP2003031589A5 JP2003031589A5 JP2002117416A JP2002117416A JP2003031589A5 JP 2003031589 A5 JP2003031589 A5 JP 2003031589A5 JP 2002117416 A JP2002117416 A JP 2002117416A JP 2002117416 A JP2002117416 A JP 2002117416A JP 2003031589 A5 JP2003031589 A5 JP 2003031589A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- concentration
- type impurity
- semiconductor layer
- impurity element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 claims 82
- 239000004065 semiconductor Substances 0.000 claims 58
- 230000015572 biosynthetic process Effects 0.000 claims 8
- 238000005530 etching Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000000956 alloy Substances 0.000 claims 4
- 229910045601 alloy Inorganic materials 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 4
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002117416A JP4044360B2 (ja) | 2001-04-19 | 2002-04-19 | 半導体装置およびその作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001121819 | 2001-04-19 | ||
| JP2001-121819 | 2001-04-19 | ||
| JP2002117416A JP4044360B2 (ja) | 2001-04-19 | 2002-04-19 | 半導体装置およびその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003031589A JP2003031589A (ja) | 2003-01-31 |
| JP2003031589A5 true JP2003031589A5 (enExample) | 2005-08-04 |
| JP4044360B2 JP4044360B2 (ja) | 2008-02-06 |
Family
ID=26613889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002117416A Expired - Fee Related JP4044360B2 (ja) | 2001-04-19 | 2002-04-19 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4044360B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4554286B2 (ja) * | 2004-06-23 | 2010-09-29 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
| JP5207052B2 (ja) * | 2008-08-22 | 2013-06-12 | 株式会社豊田中央研究所 | 接合体およびその製造方法 |
| JP2014165310A (ja) * | 2013-02-25 | 2014-09-08 | Japan Display Inc | 表示装置 |
| CN109147576A (zh) * | 2018-09-05 | 2019-01-04 | 福建华佳彩有限公司 | 异形切割显示面板的像素切边区域的切边方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100267755B1 (ko) * | 1993-03-18 | 2000-10-16 | 김영환 | 박막트랜지스터 제조방법 |
| JP4531175B2 (ja) * | 1998-12-03 | 2010-08-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2002
- 2002-04-19 JP JP2002117416A patent/JP4044360B2/ja not_active Expired - Fee Related
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