JP4042095B2 - 高純度金属粉の製造方法および高純度金属粉の製造装置 - Google Patents
高純度金属粉の製造方法および高純度金属粉の製造装置 Download PDFInfo
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- JP4042095B2 JP4042095B2 JP2002063447A JP2002063447A JP4042095B2 JP 4042095 B2 JP4042095 B2 JP 4042095B2 JP 2002063447 A JP2002063447 A JP 2002063447A JP 2002063447 A JP2002063447 A JP 2002063447A JP 4042095 B2 JP4042095 B2 JP 4042095B2
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- gas
- metal powder
- refining
- plasma flame
- hydrogen
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- 239000000843 powder Substances 0.000 title claims description 65
- 229910052751 metal Inorganic materials 0.000 title claims description 53
- 239000002184 metal Substances 0.000 title claims description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000007789 gas Substances 0.000 claims description 146
- 238000007670 refining Methods 0.000 claims description 81
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 66
- 239000001257 hydrogen Substances 0.000 claims description 62
- 229910052739 hydrogen Inorganic materials 0.000 claims description 62
- 239000002994 raw material Substances 0.000 claims description 58
- 238000011144 upstream manufacturing Methods 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000003870 refractory metal Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 238000003723 Smelting Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 24
- 239000012535 impurity Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 238000011084 recovery Methods 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002063447A JP4042095B2 (ja) | 2002-03-08 | 2002-03-08 | 高純度金属粉の製造方法および高純度金属粉の製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002063447A JP4042095B2 (ja) | 2002-03-08 | 2002-03-08 | 高純度金属粉の製造方法および高純度金属粉の製造装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003268422A JP2003268422A (ja) | 2003-09-25 |
| JP2003268422A5 JP2003268422A5 (enExample) | 2005-08-25 |
| JP4042095B2 true JP4042095B2 (ja) | 2008-02-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2002063447A Expired - Fee Related JP4042095B2 (ja) | 2002-03-08 | 2002-03-08 | 高純度金属粉の製造方法および高純度金属粉の製造装置 |
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| Country | Link |
|---|---|
| JP (1) | JP4042095B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190067658A (ko) * | 2017-12-07 | 2019-06-17 | 한국생산기술연구원 | 고순도 구형 분말의 제조방법 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100584570B1 (ko) | 2006-02-28 | 2006-05-30 | 한국기계연구원 | 플라즈마 반응장치 |
| EP1942202A3 (en) * | 2007-01-08 | 2010-09-29 | Heraeus, Inc. | High density, low oxygen Re and Re-based consolidated powder materials for use as deposition sources & methods of making the same |
| WO2009119196A1 (ja) * | 2008-03-28 | 2009-10-01 | 日鉱金属株式会社 | 磁性材ターゲット用白金粉末、同粉末の製造方法、白金焼結体からなる磁性材ターゲットの製造方法及び同焼結磁性材ターゲット |
| CN103736435B (zh) * | 2013-12-27 | 2015-11-18 | 中国神华能源股份有限公司 | 一种利用交流等离子体球化粉体的设备及系统 |
| KR102273282B1 (ko) * | 2020-01-30 | 2021-07-06 | 주식회사 나노코리아 | 금속 분말의 제조방법 |
| KR102467741B1 (ko) * | 2021-08-05 | 2022-11-16 | 한국핵융합에너지연구원 | 플라즈마를 이용한 아토마이징 시스템 및 아토마이징 방법 |
| KR102491080B1 (ko) * | 2021-08-05 | 2023-01-19 | 한국핵융합에너지연구원 | 플라즈마를 이용한 분말 구형화 장치 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5749937A (en) * | 1995-03-14 | 1998-05-12 | Lockheed Idaho Technologies Company | Fast quench reactor and method |
| JP2001020065A (ja) * | 1999-07-07 | 2001-01-23 | Hitachi Metals Ltd | スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料 |
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2002
- 2002-03-08 JP JP2002063447A patent/JP4042095B2/ja not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190067658A (ko) * | 2017-12-07 | 2019-06-17 | 한국생산기술연구원 | 고순도 구형 분말의 제조방법 |
| KR102020314B1 (ko) * | 2017-12-07 | 2019-09-11 | 한국생산기술연구원 | 고순도 구형 분말의 제조방법 |
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| Publication number | Publication date |
|---|---|
| JP2003268422A (ja) | 2003-09-25 |
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