JP4033572B2 - 磁気センサ及びその製造方法 - Google Patents

磁気センサ及びその製造方法 Download PDF

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JP4033572B2
JP4033572B2 JP01524899A JP1524899A JP4033572B2 JP 4033572 B2 JP4033572 B2 JP 4033572B2 JP 01524899 A JP01524899 A JP 01524899A JP 1524899 A JP1524899 A JP 1524899A JP 4033572 B2 JP4033572 B2 JP 4033572B2
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film
magnetic
layer
substrate
exchange coupling
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JP2000215413A (ja
JP2000215413A5 (enExample
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裕之 星屋
進 添谷
賢一 目黒
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株式会社日立グローバルストレージテクノロジーズ
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JP01524899A 1999-01-25 1999-01-25 磁気センサ及びその製造方法 Expired - Fee Related JP4033572B2 (ja)

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JP01524899A JP4033572B2 (ja) 1999-01-25 1999-01-25 磁気センサ及びその製造方法

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JP01524899A JP4033572B2 (ja) 1999-01-25 1999-01-25 磁気センサ及びその製造方法

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JP2000215413A JP2000215413A (ja) 2000-08-04
JP2000215413A5 JP2000215413A5 (enExample) 2006-02-09
JP4033572B2 true JP4033572B2 (ja) 2008-01-16

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006139828A (ja) 2004-11-10 2006-06-01 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッド
US7635974B2 (en) * 2007-05-02 2009-12-22 Magic Technologies, Inc. Magnetic tunnel junction (MTJ) based magnetic field angle sensor
JP7302612B2 (ja) 2021-01-18 2023-07-04 Tdk株式会社 磁気センサ
JP7298630B2 (ja) 2021-01-25 2023-06-27 Tdk株式会社 磁気センサ
DE102023108388A1 (de) * 2023-03-31 2024-10-02 Johannes Gutenberg-Universität Mainz, Körperschaft des öffentlichen Rechts Spannungsbeeinflussungseinrichtung zum Erzeugen einer lokalen Veränderung einer inneren mechanischen Spannung
CN119199666A (zh) * 2024-09-30 2024-12-27 中国南方电网有限责任公司 面外垂直各向异性隧道磁电阻传感器及其制备方法

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