JP4016071B2 - 冷却手段を備えた装置及び冷却方法 - Google Patents
冷却手段を備えた装置及び冷却方法 Download PDFInfo
- Publication number
- JP4016071B2 JP4016071B2 JP2004144538A JP2004144538A JP4016071B2 JP 4016071 B2 JP4016071 B2 JP 4016071B2 JP 2004144538 A JP2004144538 A JP 2004144538A JP 2004144538 A JP2004144538 A JP 2004144538A JP 4016071 B2 JP4016071 B2 JP 4016071B2
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- Japan
- Prior art keywords
- refrigerant
- vacuum apparatus
- vacuum
- cooling
- path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
- F25D23/00—General constructional features
- F25D23/06—Walls
- F25D23/061—Walls with conduit means
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Physical Vapour Deposition (AREA)
Description
真空槽本体20には真空排気のために真空槽開口21が設けられ、ここにメインポンプ22、メインバルブ24、粗引ポンプ23、粗引バルブ25や補助バルブ26などで構成される排気系が取付けられる。真空槽本体20内の下部には蒸着材料29を入れる坩堝28や蒸着材料29を蒸発温度まで加熱する電子銃30、蒸着完了時に閉じ、蒸着材料29を遮蔽するシャッター27などが配置される。これらは真空槽本体20の外から坩堝機構導入部46や電子銃導入部47などによって真空槽内に導入される。また、図3では基板32を加熱する際に昇温時間を短縮させるためのハロゲンヒーター31が配置されている。真空槽本体20内の上部には基板32を搭載する基板ドーム33や基板32を加熱するための基板加熱用ヒーター34が配置される。真空槽本体20の外には基板ドーム回転機構35や基板加熱用ヒーター導入部36などが配置される。
2 集中接続部
20 真空槽本体
21 真空槽開口
22 メインポンプ
23 粗引きポンプ
24 メインバルブ
25 粗引きバルブ
26 補助バルブ
27 シャッター
28 坩堝
29 蒸着材料
30 電子銃
31 ハロゲンヒーター
32 基板
33 基板ドーム
34 基板加熱用ヒーター
35 基板ドーム回転機構
36 基板加熱用ヒーター導入部
37 チラー
38 冷媒入側マニホールド
39 冷媒出側マニホールド
40 バルブ
41 フローメーター
42 チューブ
43 真空槽本体冷却管
44 真空槽本体冷却管入口側継手
45 真空槽本体冷却管出口側継手
46 坩堝機構導入部
47 電子銃導入部
48 真空槽壁面
49 銅パイプ
50 銀ろう付け
51 ステンレス製角パイプ
52 溶接
53 ソケット
54 熱伝導率の低い材料
Claims (10)
- 真空装置であって、
槽壁に覆われた槽、該真空装置に搭載された成膜のための機構、及び該機構を冷却するための1本以上の冷媒経路からなり、
前記冷媒経路が前記槽を冷却するように該槽壁の外表面又は内表面に接触配置されたことを特徴とする真空装置。
- 請求項1記載の真空装置であって、
さらに、前記槽壁のみを冷却する1本以上の冷媒経路からなることを特徴とする真空装置。
- 請求項1又は2記載の真空装置であって、
前記冷媒経路の各々に独立して冷媒を循環させる冷媒循環器を設けたことを特徴とする真空装置。
- 請求項3記載の真空装置であって、
該冷媒循環器から前記各冷媒経路へ冷媒を導入する冷媒入側マニホールド、及び、前記各冷媒経路から該冷媒循環器へ冷媒を導入する冷媒出側マニホールドを設けたことを特徴とする真空装置。
- 請求項4記載の真空装置であって、
前記各冷媒経路の個別の始端をなし、該冷媒入側マニホールドからチューブを介して前記各冷媒経路へ冷媒を導入する冷媒導入部、及び、前記各冷媒経路の終端をなし、前記各冷媒経路からチューブを介して該冷媒出側マニホールドへ冷媒を導出する冷媒導出部を前記槽壁の一部に設けたことを特徴とする真空装置。
- 請求項5記載の真空装置であって、
該冷媒導入部において、前記各冷媒経路が独立した状態で、かつ、総括して配置され、
該冷媒導出部において、前記各冷媒経路が独立した状態で、かつ、総括して配置されるように構成されたことを特徴とする真空装置。
- 請求項5又は請求項6記載の真空装置であって、
該冷媒導入部及び該冷媒導出部が前記槽壁の同一側面に配置されたことを特徴とする真空装置。
- 請求項1から請求項7いずれか一項に記載の真空装置であって、
前記内機構又は前記外機構を冷却するための前記冷媒経路は、前記槽壁の一部を形成する配管、及び、該配管と前記内機構又は前記外機構とを接続するチューブからなることを特徴とする真空装置。
- 請求項1から請求項8いずれか一項に記載の真空装置であって、
前記冷媒は冷却水からなることを特徴とする真空装置。
- 請求項1から請求項9いずれか一項に記載の真空装置であって、
前記機構が、成膜基板を加熱するための基板加熱用ヒーター、成膜基板を搭載する基板ドームを回転させる基板ドーム回転機構、蒸発源を保持する坩堝及び該蒸発源を加熱する電子銃のうちの少なくとも1つを含むことを特徴とする真空装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004144538A JP4016071B2 (ja) | 2004-05-14 | 2004-05-14 | 冷却手段を備えた装置及び冷却方法 |
CN2005800130682A CN1946871B (zh) | 2004-05-14 | 2005-01-24 | 具有冷却装置的装置及冷却方法 |
PCT/JP2005/000849 WO2005111258A1 (ja) | 2004-05-14 | 2005-01-24 | 冷却手段を備えた装置及び冷却方法 |
KR1020067022051A KR100884161B1 (ko) | 2004-05-14 | 2005-01-24 | 냉각 수단을 구비한 진공 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004144538A JP4016071B2 (ja) | 2004-05-14 | 2004-05-14 | 冷却手段を備えた装置及び冷却方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005325410A JP2005325410A (ja) | 2005-11-24 |
JP2005325410A5 JP2005325410A5 (ja) | 2007-02-08 |
JP4016071B2 true JP4016071B2 (ja) | 2007-12-05 |
Family
ID=35394172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004144538A Expired - Fee Related JP4016071B2 (ja) | 2004-05-14 | 2004-05-14 | 冷却手段を備えた装置及び冷却方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4016071B2 (ja) |
KR (1) | KR100884161B1 (ja) |
CN (1) | CN1946871B (ja) |
WO (1) | WO2005111258A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2234463A1 (en) * | 2007-12-27 | 2010-09-29 | Sharp Kabushiki Kaisha | Plasma treatment apparatus, heating device for the plasma treatment apparatus, and plasma treatment method |
CN103132027A (zh) * | 2011-11-28 | 2013-06-05 | 鸿富锦精密工业(深圳)有限公司 | 真空镀膜设备 |
CN108385065A (zh) * | 2018-05-23 | 2018-08-10 | 北京铂阳顶荣光伏科技有限公司 | 一种带有蒸发源的设备及安全控制方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03179742A (ja) * | 1989-12-07 | 1991-08-05 | Toshiba Corp | 酸化珪素成膜方法 |
KR100297003B1 (ko) * | 1998-02-10 | 2001-08-07 | 서성기 | 박막증착장치 |
JP2000310694A (ja) * | 1999-04-27 | 2000-11-07 | Ishikawajima Harima Heavy Ind Co Ltd | 原子炉圧力容器アクセスホールカバーの吊り耳切断用放電加工電極 |
KR20020086761A (ko) * | 2001-05-10 | 2002-11-20 | 주식회사 엘지이아이 | 냉각수단을 구비한 고분자막 연속증착장비 |
DE10256038A1 (de) * | 2002-11-30 | 2004-06-17 | Applied Films Gmbh & Co. Kg | Bedampfungsvorrichtung |
-
2004
- 2004-05-14 JP JP2004144538A patent/JP4016071B2/ja not_active Expired - Fee Related
-
2005
- 2005-01-24 CN CN2005800130682A patent/CN1946871B/zh not_active Expired - Fee Related
- 2005-01-24 WO PCT/JP2005/000849 patent/WO2005111258A1/ja active Application Filing
- 2005-01-24 KR KR1020067022051A patent/KR100884161B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100884161B1 (ko) | 2009-02-17 |
CN1946871A (zh) | 2007-04-11 |
CN1946871B (zh) | 2012-06-20 |
KR20070012424A (ko) | 2007-01-25 |
JP2005325410A (ja) | 2005-11-24 |
WO2005111258A1 (ja) | 2005-11-24 |
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