JP3988961B2 - 窒化ガリウム系化合物半導体発光素子及びその製造方法 - Google Patents

窒化ガリウム系化合物半導体発光素子及びその製造方法 Download PDF

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Publication number
JP3988961B2
JP3988961B2 JP19762797A JP19762797A JP3988961B2 JP 3988961 B2 JP3988961 B2 JP 3988961B2 JP 19762797 A JP19762797 A JP 19762797A JP 19762797 A JP19762797 A JP 19762797A JP 3988961 B2 JP3988961 B2 JP 3988961B2
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Japan
Prior art keywords
layer
gallium nitride
compound semiconductor
semiconductor light
substrate
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Expired - Fee Related
Application number
JP19762797A
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English (en)
Japanese (ja)
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JPH1093199A5 (enExample
JPH1093199A (ja
Inventor
俊雄 幡
和彦 猪口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
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Sharp Corp
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Priority to JP19762797A priority Critical patent/JP3988961B2/ja
Publication of JPH1093199A publication Critical patent/JPH1093199A/ja
Publication of JPH1093199A5 publication Critical patent/JPH1093199A5/ja
Application granted granted Critical
Publication of JP3988961B2 publication Critical patent/JP3988961B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP19762797A 1996-07-25 1997-07-23 窒化ガリウム系化合物半導体発光素子及びその製造方法 Expired - Fee Related JP3988961B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19762797A JP3988961B2 (ja) 1996-07-25 1997-07-23 窒化ガリウム系化合物半導体発光素子及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP19670796 1996-07-25
JP8-196707 1996-07-25
JP19762797A JP3988961B2 (ja) 1996-07-25 1997-07-23 窒化ガリウム系化合物半導体発光素子及びその製造方法

Publications (3)

Publication Number Publication Date
JPH1093199A JPH1093199A (ja) 1998-04-10
JPH1093199A5 JPH1093199A5 (enExample) 2005-05-19
JP3988961B2 true JP3988961B2 (ja) 2007-10-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP19762797A Expired - Fee Related JP3988961B2 (ja) 1996-07-25 1997-07-23 窒化ガリウム系化合物半導体発光素子及びその製造方法

Country Status (1)

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JP (1) JP3988961B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3459607B2 (ja) 1999-03-24 2003-10-20 三洋電機株式会社 半導体レーザ素子およびその製造方法
TWI373894B (en) 2003-06-27 2012-10-01 Nichia Corp Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
JP4534435B2 (ja) * 2003-06-27 2010-09-01 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
JP4534444B2 (ja) * 2003-07-10 2010-09-01 日亜化学工業株式会社 窒化物半導体レーザ及びその製造方法
JP2007234796A (ja) 2006-02-28 2007-09-13 Matsushita Electric Ind Co Ltd 窒化物半導体レーザ装置およびその製造方法
JP4821390B2 (ja) * 2006-03-17 2011-11-24 日本電気株式会社 自励発振型半導体レーザ
JP4954691B2 (ja) * 2006-12-13 2012-06-20 パナソニック株式会社 窒化物半導体レーザ装置の製造方法及び窒化物半導体レーザ装置

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JPH1093199A (ja) 1998-04-10

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