JP3979378B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP3979378B2
JP3979378B2 JP2003377204A JP2003377204A JP3979378B2 JP 3979378 B2 JP3979378 B2 JP 3979378B2 JP 2003377204 A JP2003377204 A JP 2003377204A JP 2003377204 A JP2003377204 A JP 2003377204A JP 3979378 B2 JP3979378 B2 JP 3979378B2
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JP
Japan
Prior art keywords
semiconductor layer
layer
light emitting
electrode
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003377204A
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English (en)
Japanese (ja)
Other versions
JP2005142357A (ja
Inventor
亜矢子 池田
陽一 永井
孝夫 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2003377204A priority Critical patent/JP3979378B2/ja
Priority to TW093132053A priority patent/TW200527712A/zh
Priority to EP04025811A priority patent/EP1530242B1/en
Priority to KR1020040088194A priority patent/KR101116111B1/ko
Priority to US10/980,258 priority patent/US20050098801A1/en
Priority to CNB2004100903508A priority patent/CN100524851C/zh
Publication of JP2005142357A publication Critical patent/JP2005142357A/ja
Application granted granted Critical
Publication of JP3979378B2 publication Critical patent/JP3979378B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer

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  • Led Devices (AREA)
JP2003377204A 2003-11-06 2003-11-06 半導体発光素子 Expired - Fee Related JP3979378B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003377204A JP3979378B2 (ja) 2003-11-06 2003-11-06 半導体発光素子
TW093132053A TW200527712A (en) 2003-11-06 2004-10-21 Semiconductor light emitting device
EP04025811A EP1530242B1 (en) 2003-11-06 2004-10-29 Semiconductor light emitting device
KR1020040088194A KR101116111B1 (ko) 2003-11-06 2004-11-02 반도체 발광소자
US10/980,258 US20050098801A1 (en) 2003-11-06 2004-11-04 Semiconductor light emitting device
CNB2004100903508A CN100524851C (zh) 2003-11-06 2004-11-04 半导体发光元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003377204A JP3979378B2 (ja) 2003-11-06 2003-11-06 半導体発光素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007069396A Division JP2007173866A (ja) 2007-03-16 2007-03-16 半導体発光素子

Publications (2)

Publication Number Publication Date
JP2005142357A JP2005142357A (ja) 2005-06-02
JP3979378B2 true JP3979378B2 (ja) 2007-09-19

Family

ID=34431317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003377204A Expired - Fee Related JP3979378B2 (ja) 2003-11-06 2003-11-06 半導体発光素子

Country Status (6)

Country Link
US (1) US20050098801A1 (enExample)
EP (1) EP1530242B1 (enExample)
JP (1) JP3979378B2 (enExample)
KR (1) KR101116111B1 (enExample)
CN (1) CN100524851C (enExample)
TW (1) TW200527712A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3900273B2 (ja) * 2002-09-04 2007-04-04 ソニー株式会社 光学式ヘッド装置及び情報処理装置
JP2006332370A (ja) * 2005-05-26 2006-12-07 Sumitomo Electric Ind Ltd 窒化物半導体発光素子
KR100692431B1 (ko) * 2005-11-21 2007-03-09 서울반도체 주식회사 발광 다이오드 및 그 제조방법
JP2008047871A (ja) * 2006-07-18 2008-02-28 Mitsubishi Electric Corp 半導体発光ダイオード
JP4894411B2 (ja) * 2006-08-23 2012-03-14 日立電線株式会社 半導体発光素子
TWI381547B (zh) * 2007-11-14 2013-01-01 Advanced Optoelectronic Tech 三族氮化合物半導體發光二極體及其製造方法
WO2009134095A2 (ko) 2008-04-30 2009-11-05 엘지이노텍주식회사 발광 소자 및 그 제조방법
KR100986461B1 (ko) * 2008-05-08 2010-10-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
DE102009034359A1 (de) * 2009-07-17 2011-02-17 Forschungsverbund Berlin E.V. P-Kontakt und Leuchtdiode für den ultravioletten Spektralbereich
JP2011129724A (ja) * 2009-12-18 2011-06-30 Dowa Electronics Materials Co Ltd 半導体発光素子およびその製造方法
US9818912B2 (en) 2011-12-12 2017-11-14 Sensor Electronic Technology, Inc. Ultraviolet reflective contact
WO2013090310A1 (en) 2011-12-12 2013-06-20 Sensor Electronic Technology, Inc. Ultraviolet reflective contact
US20130187122A1 (en) * 2012-01-19 2013-07-25 Taiwan Semicondutor Manufacturing Company, Ltd. Photonic device having embedded nano-scale structures
JP2013161927A (ja) * 2012-02-03 2013-08-19 Stanley Electric Co Ltd 半導体発光素子
US20210074880A1 (en) * 2018-12-18 2021-03-11 Bolb Inc. Light-output-power self-awareness light-emitting device
US20200365769A1 (en) * 2019-05-16 2020-11-19 Epistar Corporation Semiconductor device

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187547A (en) * 1988-05-18 1993-02-16 Sanyo Electric Co., Ltd. Light emitting diode device and method for producing same
JP2958209B2 (ja) * 1993-04-21 1999-10-06 シャープ株式会社 ｐｎ接合型半導体発光素子
JPH07254732A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
US5917202A (en) * 1995-12-21 1999-06-29 Hewlett-Packard Company Highly reflective contacts for light emitting semiconductor devices
TW413956B (en) * 1998-07-28 2000-12-01 Sumitomo Electric Industries Fluorescent substrate LED
US6291839B1 (en) * 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
US6262465B1 (en) * 1998-09-25 2001-07-17 Picometrix, Inc. Highly-doped P-type contact for high-speed, front-side illuminated photodiode
US6426512B1 (en) * 1999-03-05 2002-07-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
JP3567790B2 (ja) * 1999-03-31 2004-09-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US6222207B1 (en) * 1999-05-24 2001-04-24 Lumileds Lighting, U.S. Llc Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
US6455877B1 (en) * 1999-09-08 2002-09-24 Sharp Kabushiki Kaisha III-N compound semiconductor device
US6992334B1 (en) * 1999-12-22 2006-01-31 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for semiconductor devices
TWI289944B (en) * 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
JP2002016311A (ja) * 2000-06-27 2002-01-18 Sharp Corp 窒化ガリウム系発光素子
JP4065655B2 (ja) * 2000-11-09 2008-03-26 昭和電工株式会社 フリップチップ型半導体発光素子とその製造方法及び発光ダイオードランプ並びに表示装置、フリップチップ型半導体発光素子用電極
JP2002217450A (ja) * 2001-01-22 2002-08-02 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
US6730941B2 (en) * 2002-01-30 2004-05-04 Showa Denko Kabushiki Kaisha Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode
US6869820B2 (en) * 2002-01-30 2005-03-22 United Epitaxy Co., Ltd. High efficiency light emitting diode and method of making the same
DE20202493U1 (de) * 2002-02-19 2002-06-20 Opto Tech Corporattion, Hsinchu Lichtemittierende Diode mit verbesserter Helligkeit
TW577178B (en) * 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
US6649437B1 (en) * 2002-08-20 2003-11-18 United Epitaxy Company, Ltd. Method of manufacturing high-power light emitting diodes
US20040104395A1 (en) * 2002-11-28 2004-06-03 Shin-Etsu Handotai Co., Ltd. Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device

Also Published As

Publication number Publication date
KR101116111B1 (ko) 2012-03-07
EP1530242A2 (en) 2005-05-11
KR20050043638A (ko) 2005-05-11
CN1614795A (zh) 2005-05-11
JP2005142357A (ja) 2005-06-02
TW200527712A (en) 2005-08-16
EP1530242B1 (en) 2012-05-02
CN100524851C (zh) 2009-08-05
EP1530242A3 (en) 2009-06-24
US20050098801A1 (en) 2005-05-12
TWI343659B (enExample) 2011-06-11

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