CN100524851C - 半导体发光元件 - Google Patents

半导体发光元件 Download PDF

Info

Publication number
CN100524851C
CN100524851C CNB2004100903508A CN200410090350A CN100524851C CN 100524851 C CN100524851 C CN 100524851C CN B2004100903508 A CNB2004100903508 A CN B2004100903508A CN 200410090350 A CN200410090350 A CN 200410090350A CN 100524851 C CN100524851 C CN 100524851C
Authority
CN
China
Prior art keywords
mentioned
semiconductor layer
conductive
type semiconductor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100903508A
Other languages
English (en)
Chinese (zh)
Other versions
CN1614795A (zh
Inventor
池田亚矢子
永井阳一
中村孝夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN1614795A publication Critical patent/CN1614795A/zh
Application granted granted Critical
Publication of CN100524851C publication Critical patent/CN100524851C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer

Landscapes

  • Led Devices (AREA)
CNB2004100903508A 2003-11-06 2004-11-04 半导体发光元件 Expired - Fee Related CN100524851C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003377204 2003-11-06
JP2003377204A JP3979378B2 (ja) 2003-11-06 2003-11-06 半導体発光素子

Publications (2)

Publication Number Publication Date
CN1614795A CN1614795A (zh) 2005-05-11
CN100524851C true CN100524851C (zh) 2009-08-05

Family

ID=34431317

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100903508A Expired - Fee Related CN100524851C (zh) 2003-11-06 2004-11-04 半导体发光元件

Country Status (6)

Country Link
US (1) US20050098801A1 (enExample)
EP (1) EP1530242B1 (enExample)
JP (1) JP3979378B2 (enExample)
KR (1) KR101116111B1 (enExample)
CN (1) CN100524851C (enExample)
TW (1) TW200527712A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3900273B2 (ja) * 2002-09-04 2007-04-04 ソニー株式会社 光学式ヘッド装置及び情報処理装置
JP2006332370A (ja) * 2005-05-26 2006-12-07 Sumitomo Electric Ind Ltd 窒化物半導体発光素子
KR100692431B1 (ko) * 2005-11-21 2007-03-09 서울반도체 주식회사 발광 다이오드 및 그 제조방법
JP2008047871A (ja) * 2006-07-18 2008-02-28 Mitsubishi Electric Corp 半導体発光ダイオード
JP4894411B2 (ja) * 2006-08-23 2012-03-14 日立電線株式会社 半導体発光素子
TWI381547B (zh) * 2007-11-14 2013-01-01 Advanced Optoelectronic Tech 三族氮化合物半導體發光二極體及其製造方法
WO2009134095A2 (ko) 2008-04-30 2009-11-05 엘지이노텍주식회사 발광 소자 및 그 제조방법
KR100986461B1 (ko) * 2008-05-08 2010-10-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
DE102009034359A1 (de) * 2009-07-17 2011-02-17 Forschungsverbund Berlin E.V. P-Kontakt und Leuchtdiode für den ultravioletten Spektralbereich
JP2011129724A (ja) * 2009-12-18 2011-06-30 Dowa Electronics Materials Co Ltd 半導体発光素子およびその製造方法
US9818912B2 (en) 2011-12-12 2017-11-14 Sensor Electronic Technology, Inc. Ultraviolet reflective contact
WO2013090310A1 (en) 2011-12-12 2013-06-20 Sensor Electronic Technology, Inc. Ultraviolet reflective contact
US20130187122A1 (en) * 2012-01-19 2013-07-25 Taiwan Semicondutor Manufacturing Company, Ltd. Photonic device having embedded nano-scale structures
JP2013161927A (ja) * 2012-02-03 2013-08-19 Stanley Electric Co Ltd 半導体発光素子
US20210074880A1 (en) * 2018-12-18 2021-03-11 Bolb Inc. Light-output-power self-awareness light-emitting device
US20200365769A1 (en) * 2019-05-16 2020-11-19 Epistar Corporation Semiconductor device

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187547A (en) * 1988-05-18 1993-02-16 Sanyo Electric Co., Ltd. Light emitting diode device and method for producing same
JP2958209B2 (ja) * 1993-04-21 1999-10-06 シャープ株式会社 ｐｎ接合型半導体発光素子
JPH07254732A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
US5917202A (en) * 1995-12-21 1999-06-29 Hewlett-Packard Company Highly reflective contacts for light emitting semiconductor devices
TW413956B (en) * 1998-07-28 2000-12-01 Sumitomo Electric Industries Fluorescent substrate LED
US6291839B1 (en) * 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
US6262465B1 (en) * 1998-09-25 2001-07-17 Picometrix, Inc. Highly-doped P-type contact for high-speed, front-side illuminated photodiode
US6426512B1 (en) * 1999-03-05 2002-07-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
JP3567790B2 (ja) * 1999-03-31 2004-09-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US6222207B1 (en) * 1999-05-24 2001-04-24 Lumileds Lighting, U.S. Llc Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
US6455877B1 (en) * 1999-09-08 2002-09-24 Sharp Kabushiki Kaisha III-N compound semiconductor device
US6992334B1 (en) * 1999-12-22 2006-01-31 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for semiconductor devices
TWI289944B (en) * 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
JP2002016311A (ja) * 2000-06-27 2002-01-18 Sharp Corp 窒化ガリウム系発光素子
JP4065655B2 (ja) * 2000-11-09 2008-03-26 昭和電工株式会社 フリップチップ型半導体発光素子とその製造方法及び発光ダイオードランプ並びに表示装置、フリップチップ型半導体発光素子用電極
JP2002217450A (ja) * 2001-01-22 2002-08-02 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
US6730941B2 (en) * 2002-01-30 2004-05-04 Showa Denko Kabushiki Kaisha Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode
US6869820B2 (en) * 2002-01-30 2005-03-22 United Epitaxy Co., Ltd. High efficiency light emitting diode and method of making the same
DE20202493U1 (de) * 2002-02-19 2002-06-20 Opto Tech Corporattion, Hsinchu Lichtemittierende Diode mit verbesserter Helligkeit
TW577178B (en) * 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
US6649437B1 (en) * 2002-08-20 2003-11-18 United Epitaxy Company, Ltd. Method of manufacturing high-power light emitting diodes
US20040104395A1 (en) * 2002-11-28 2004-06-03 Shin-Etsu Handotai Co., Ltd. Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device

Also Published As

Publication number Publication date
KR101116111B1 (ko) 2012-03-07
EP1530242A2 (en) 2005-05-11
KR20050043638A (ko) 2005-05-11
CN1614795A (zh) 2005-05-11
JP2005142357A (ja) 2005-06-02
TW200527712A (en) 2005-08-16
EP1530242B1 (en) 2012-05-02
JP3979378B2 (ja) 2007-09-19
EP1530242A3 (en) 2009-06-24
US20050098801A1 (en) 2005-05-12
TWI343659B (enExample) 2011-06-11

Similar Documents

Publication Publication Date Title
TW558847B (en) Semiconductor device
KR100838197B1 (ko) 개선된 전류분산 성능을 갖는 발광 다이오드
CN103367593B (zh) 半导体发光器件
TWI596801B (zh) 藉由使用反射層強化發光二極體的光擷取效率
CN100524851C (zh) 半导体发光元件
JP4239508B2 (ja) 発光素子
CN113555476B (zh) 发光二极管元件
JP4644193B2 (ja) 半導体発光素子
KR101179606B1 (ko) 반도체 발광소자
US7791100B2 (en) Vertical gallium nitride based light emitting diode with multiple electrode branches
TW201505211A (zh) 發光元件
JP2013258177A (ja) Ｉｉｉ族窒化物半導体発光素子
KR101199494B1 (ko) 반도체 발광소자
CN111799359A (zh) 发光元件
TWI575783B (zh) 光電半導體晶片及製造光電半導體晶片之方法
KR101373765B1 (ko) 반도체 발광소자
JP2008159894A (ja) 発光素子及び照明装置
JP2007173866A (ja) 半導体発光素子
KR101293495B1 (ko) 반도체 발광소자
CN118553826A (zh) 半导体光电元件
CN102544284A (zh) 发光二极管结构及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090805

Termination date: 20161104

CF01 Termination of patent right due to non-payment of annual fee