KR101116111B1 - 반도체 발광소자 - Google Patents

반도체 발광소자 Download PDF

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Publication number
KR101116111B1
KR101116111B1 KR1020040088194A KR20040088194A KR101116111B1 KR 101116111 B1 KR101116111 B1 KR 101116111B1 KR 1020040088194 A KR1020040088194 A KR 1020040088194A KR 20040088194 A KR20040088194 A KR 20040088194A KR 101116111 B1 KR101116111 B1 KR 101116111B1
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South Korea
Prior art keywords
semiconductor layer
electrode
layer
light emitting
conductive
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Expired - Fee Related
Application number
KR1020040088194A
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English (en)
Korean (ko)
Other versions
KR20050043638A (ko
Inventor
이케다아야코
나가이요우이치
나카무라타카오
Original Assignee
스미토모덴키고교가부시키가이샤
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Publication of KR20050043638A publication Critical patent/KR20050043638A/ko
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Publication of KR101116111B1 publication Critical patent/KR101116111B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer

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  • Led Devices (AREA)
KR1020040088194A 2003-11-06 2004-11-02 반도체 발광소자 Expired - Fee Related KR101116111B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003377204A JP3979378B2 (ja) 2003-11-06 2003-11-06 半導体発光素子
JPJP-P-2003-00377204 2003-11-06

Publications (2)

Publication Number Publication Date
KR20050043638A KR20050043638A (ko) 2005-05-11
KR101116111B1 true KR101116111B1 (ko) 2012-03-07

Family

ID=34431317

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040088194A Expired - Fee Related KR101116111B1 (ko) 2003-11-06 2004-11-02 반도체 발광소자

Country Status (6)

Country Link
US (1) US20050098801A1 (enExample)
EP (1) EP1530242B1 (enExample)
JP (1) JP3979378B2 (enExample)
KR (1) KR101116111B1 (enExample)
CN (1) CN100524851C (enExample)
TW (1) TW200527712A (enExample)

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JP3900273B2 (ja) * 2002-09-04 2007-04-04 ソニー株式会社 光学式ヘッド装置及び情報処理装置
JP2006332370A (ja) * 2005-05-26 2006-12-07 Sumitomo Electric Ind Ltd 窒化物半導体発光素子
KR100692431B1 (ko) * 2005-11-21 2007-03-09 서울반도체 주식회사 발광 다이오드 및 그 제조방법
JP2008047871A (ja) * 2006-07-18 2008-02-28 Mitsubishi Electric Corp 半導体発光ダイオード
JP4894411B2 (ja) * 2006-08-23 2012-03-14 日立電線株式会社 半導体発光素子
TWI381547B (zh) * 2007-11-14 2013-01-01 Advanced Optoelectronic Tech 三族氮化合物半導體發光二極體及其製造方法
WO2009134095A2 (ko) 2008-04-30 2009-11-05 엘지이노텍주식회사 발광 소자 및 그 제조방법
KR100986461B1 (ko) * 2008-05-08 2010-10-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
DE102009034359A1 (de) * 2009-07-17 2011-02-17 Forschungsverbund Berlin E.V. P-Kontakt und Leuchtdiode für den ultravioletten Spektralbereich
JP2011129724A (ja) * 2009-12-18 2011-06-30 Dowa Electronics Materials Co Ltd 半導体発光素子およびその製造方法
US9818912B2 (en) 2011-12-12 2017-11-14 Sensor Electronic Technology, Inc. Ultraviolet reflective contact
WO2013090310A1 (en) 2011-12-12 2013-06-20 Sensor Electronic Technology, Inc. Ultraviolet reflective contact
US20130187122A1 (en) * 2012-01-19 2013-07-25 Taiwan Semicondutor Manufacturing Company, Ltd. Photonic device having embedded nano-scale structures
JP2013161927A (ja) * 2012-02-03 2013-08-19 Stanley Electric Co Ltd 半導体発光素子
US20210074880A1 (en) * 2018-12-18 2021-03-11 Bolb Inc. Light-output-power self-awareness light-emitting device
US20200365769A1 (en) * 2019-05-16 2020-11-19 Epistar Corporation Semiconductor device

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2002151739A (ja) * 2000-11-09 2002-05-24 Showa Denko Kk フリップチップ型半導体発光素子とその製造方法及び発光ダイオードランプ並びに表示装置、フリップチップ型半導体発光素子用電極

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US5187547A (en) * 1988-05-18 1993-02-16 Sanyo Electric Co., Ltd. Light emitting diode device and method for producing same
JP2958209B2 (ja) * 1993-04-21 1999-10-06 シャープ株式会社 ｐｎ接合型半導体発光素子
JPH07254732A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
US5917202A (en) * 1995-12-21 1999-06-29 Hewlett-Packard Company Highly reflective contacts for light emitting semiconductor devices
TW413956B (en) * 1998-07-28 2000-12-01 Sumitomo Electric Industries Fluorescent substrate LED
US6291839B1 (en) * 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
US6262465B1 (en) * 1998-09-25 2001-07-17 Picometrix, Inc. Highly-doped P-type contact for high-speed, front-side illuminated photodiode
US6426512B1 (en) * 1999-03-05 2002-07-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
JP3567790B2 (ja) * 1999-03-31 2004-09-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US6222207B1 (en) * 1999-05-24 2001-04-24 Lumileds Lighting, U.S. Llc Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
US6455877B1 (en) * 1999-09-08 2002-09-24 Sharp Kabushiki Kaisha III-N compound semiconductor device
US6992334B1 (en) * 1999-12-22 2006-01-31 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for semiconductor devices
TWI289944B (en) * 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
JP2002016311A (ja) * 2000-06-27 2002-01-18 Sharp Corp 窒化ガリウム系発光素子
JP2002217450A (ja) * 2001-01-22 2002-08-02 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
US6730941B2 (en) * 2002-01-30 2004-05-04 Showa Denko Kabushiki Kaisha Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode
US6869820B2 (en) * 2002-01-30 2005-03-22 United Epitaxy Co., Ltd. High efficiency light emitting diode and method of making the same
DE20202493U1 (de) * 2002-02-19 2002-06-20 Opto Tech Corporattion, Hsinchu Lichtemittierende Diode mit verbesserter Helligkeit
TW577178B (en) * 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
US6649437B1 (en) * 2002-08-20 2003-11-18 United Epitaxy Company, Ltd. Method of manufacturing high-power light emitting diodes
US20040104395A1 (en) * 2002-11-28 2004-06-03 Shin-Etsu Handotai Co., Ltd. Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002151739A (ja) * 2000-11-09 2002-05-24 Showa Denko Kk フリップチップ型半導体発光素子とその製造方法及び発光ダイオードランプ並びに表示装置、フリップチップ型半導体発光素子用電極

Also Published As

Publication number Publication date
EP1530242A2 (en) 2005-05-11
KR20050043638A (ko) 2005-05-11
CN1614795A (zh) 2005-05-11
JP2005142357A (ja) 2005-06-02
TW200527712A (en) 2005-08-16
EP1530242B1 (en) 2012-05-02
JP3979378B2 (ja) 2007-09-19
CN100524851C (zh) 2009-08-05
EP1530242A3 (en) 2009-06-24
US20050098801A1 (en) 2005-05-12
TWI343659B (enExample) 2011-06-11

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