TW200527712A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting device Download PDFInfo
- Publication number
- TW200527712A TW200527712A TW093132053A TW93132053A TW200527712A TW 200527712 A TW200527712 A TW 200527712A TW 093132053 A TW093132053 A TW 093132053A TW 93132053 A TW93132053 A TW 93132053A TW 200527712 A TW200527712 A TW 200527712A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- light
- layer
- semiconductor light
- semiconductor layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 171
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims description 50
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 7
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 14
- 238000005253 cladding Methods 0.000 description 13
- 238000000605 extraction Methods 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000020169 heat generation Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 210000004508 polar body Anatomy 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- -1 Qin Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/835—Reflective materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003377204A JP3979378B2 (ja) | 2003-11-06 | 2003-11-06 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200527712A true TW200527712A (en) | 2005-08-16 |
| TWI343659B TWI343659B (enExample) | 2011-06-11 |
Family
ID=34431317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093132053A TW200527712A (en) | 2003-11-06 | 2004-10-21 | Semiconductor light emitting device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20050098801A1 (enExample) |
| EP (1) | EP1530242B1 (enExample) |
| JP (1) | JP3979378B2 (enExample) |
| KR (1) | KR101116111B1 (enExample) |
| CN (1) | CN100524851C (enExample) |
| TW (1) | TW200527712A (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3900273B2 (ja) * | 2002-09-04 | 2007-04-04 | ソニー株式会社 | 光学式ヘッド装置及び情報処理装置 |
| JP2006332370A (ja) * | 2005-05-26 | 2006-12-07 | Sumitomo Electric Ind Ltd | 窒化物半導体発光素子 |
| KR100692431B1 (ko) * | 2005-11-21 | 2007-03-09 | 서울반도체 주식회사 | 발광 다이오드 및 그 제조방법 |
| JP2008047871A (ja) * | 2006-07-18 | 2008-02-28 | Mitsubishi Electric Corp | 半導体発光ダイオード |
| JP4894411B2 (ja) * | 2006-08-23 | 2012-03-14 | 日立電線株式会社 | 半導体発光素子 |
| TWI381547B (zh) * | 2007-11-14 | 2013-01-01 | Advanced Optoelectronic Tech | 三族氮化合物半導體發光二極體及其製造方法 |
| WO2009134095A2 (ko) | 2008-04-30 | 2009-11-05 | 엘지이노텍주식회사 | 발광 소자 및 그 제조방법 |
| KR100986461B1 (ko) * | 2008-05-08 | 2010-10-08 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
| DE102009034359A1 (de) * | 2009-07-17 | 2011-02-17 | Forschungsverbund Berlin E.V. | P-Kontakt und Leuchtdiode für den ultravioletten Spektralbereich |
| JP2011129724A (ja) * | 2009-12-18 | 2011-06-30 | Dowa Electronics Materials Co Ltd | 半導体発光素子およびその製造方法 |
| US9818912B2 (en) | 2011-12-12 | 2017-11-14 | Sensor Electronic Technology, Inc. | Ultraviolet reflective contact |
| WO2013090310A1 (en) | 2011-12-12 | 2013-06-20 | Sensor Electronic Technology, Inc. | Ultraviolet reflective contact |
| US20130187122A1 (en) * | 2012-01-19 | 2013-07-25 | Taiwan Semicondutor Manufacturing Company, Ltd. | Photonic device having embedded nano-scale structures |
| JP2013161927A (ja) * | 2012-02-03 | 2013-08-19 | Stanley Electric Co Ltd | 半導体発光素子 |
| US20210074880A1 (en) * | 2018-12-18 | 2021-03-11 | Bolb Inc. | Light-output-power self-awareness light-emitting device |
| US20200365769A1 (en) * | 2019-05-16 | 2020-11-19 | Epistar Corporation | Semiconductor device |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5187547A (en) * | 1988-05-18 | 1993-02-16 | Sanyo Electric Co., Ltd. | Light emitting diode device and method for producing same |
| JP2958209B2 (ja) * | 1993-04-21 | 1999-10-06 | シャープ株式会社 | ｐｎ接合型半導体発光素子 |
| JPH07254732A (ja) * | 1994-03-15 | 1995-10-03 | Toshiba Corp | 半導体発光装置 |
| US5917202A (en) * | 1995-12-21 | 1999-06-29 | Hewlett-Packard Company | Highly reflective contacts for light emitting semiconductor devices |
| TW413956B (en) * | 1998-07-28 | 2000-12-01 | Sumitomo Electric Industries | Fluorescent substrate LED |
| US6291839B1 (en) * | 1998-09-11 | 2001-09-18 | Lulileds Lighting, U.S. Llc | Light emitting device having a finely-patterned reflective contact |
| US6262465B1 (en) * | 1998-09-25 | 2001-07-17 | Picometrix, Inc. | Highly-doped P-type contact for high-speed, front-side illuminated photodiode |
| US6426512B1 (en) * | 1999-03-05 | 2002-07-30 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
| JP3567790B2 (ja) * | 1999-03-31 | 2004-09-22 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| US6222207B1 (en) * | 1999-05-24 | 2001-04-24 | Lumileds Lighting, U.S. Llc | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip |
| US6455877B1 (en) * | 1999-09-08 | 2002-09-24 | Sharp Kabushiki Kaisha | III-N compound semiconductor device |
| US6992334B1 (en) * | 1999-12-22 | 2006-01-31 | Lumileds Lighting U.S., Llc | Multi-layer highly reflective ohmic contacts for semiconductor devices |
| TWI289944B (en) * | 2000-05-26 | 2007-11-11 | Osram Opto Semiconductors Gmbh | Light-emitting-diode-element with a light-emitting-diode-chip |
| JP2002016311A (ja) * | 2000-06-27 | 2002-01-18 | Sharp Corp | 窒化ガリウム系発光素子 |
| JP4065655B2 (ja) * | 2000-11-09 | 2008-03-26 | 昭和電工株式会社 | フリップチップ型半導体発光素子とその製造方法及び発光ダイオードランプ並びに表示装置、フリップチップ型半導体発光素子用電極 |
| JP2002217450A (ja) * | 2001-01-22 | 2002-08-02 | Sanken Electric Co Ltd | 半導体発光素子及びその製造方法 |
| US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
| US6784462B2 (en) * | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
| US6730941B2 (en) * | 2002-01-30 | 2004-05-04 | Showa Denko Kabushiki Kaisha | Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode |
| US6869820B2 (en) * | 2002-01-30 | 2005-03-22 | United Epitaxy Co., Ltd. | High efficiency light emitting diode and method of making the same |
| DE20202493U1 (de) * | 2002-02-19 | 2002-06-20 | Opto Tech Corporattion, Hsinchu | Lichtemittierende Diode mit verbesserter Helligkeit |
| TW577178B (en) * | 2002-03-04 | 2004-02-21 | United Epitaxy Co Ltd | High efficient reflective metal layer of light emitting diode |
| US6649437B1 (en) * | 2002-08-20 | 2003-11-18 | United Epitaxy Company, Ltd. | Method of manufacturing high-power light emitting diodes |
| US20040104395A1 (en) * | 2002-11-28 | 2004-06-03 | Shin-Etsu Handotai Co., Ltd. | Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device |
-
2003
- 2003-11-06 JP JP2003377204A patent/JP3979378B2/ja not_active Expired - Fee Related
-
2004
- 2004-10-21 TW TW093132053A patent/TW200527712A/zh not_active IP Right Cessation
- 2004-10-29 EP EP04025811A patent/EP1530242B1/en not_active Expired - Lifetime
- 2004-11-02 KR KR1020040088194A patent/KR101116111B1/ko not_active Expired - Fee Related
- 2004-11-04 CN CNB2004100903508A patent/CN100524851C/zh not_active Expired - Fee Related
- 2004-11-04 US US10/980,258 patent/US20050098801A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| KR101116111B1 (ko) | 2012-03-07 |
| EP1530242A2 (en) | 2005-05-11 |
| KR20050043638A (ko) | 2005-05-11 |
| CN1614795A (zh) | 2005-05-11 |
| JP2005142357A (ja) | 2005-06-02 |
| EP1530242B1 (en) | 2012-05-02 |
| JP3979378B2 (ja) | 2007-09-19 |
| CN100524851C (zh) | 2009-08-05 |
| EP1530242A3 (en) | 2009-06-24 |
| US20050098801A1 (en) | 2005-05-12 |
| TWI343659B (enExample) | 2011-06-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |