JP3978140B2 - 処理ツールにおいて基板上の欠陥を検出するための構成および方法 - Google Patents

処理ツールにおいて基板上の欠陥を検出するための構成および方法 Download PDF

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Publication number
JP3978140B2
JP3978140B2 JP2002590411A JP2002590411A JP3978140B2 JP 3978140 B2 JP3978140 B2 JP 3978140B2 JP 2002590411 A JP2002590411 A JP 2002590411A JP 2002590411 A JP2002590411 A JP 2002590411A JP 3978140 B2 JP3978140 B2 JP 3978140B2
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Japan
Prior art keywords
substrate
transfer area
optical sensor
area
device transfer
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Expired - Fee Related
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JP2002590411A
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English (en)
Japanese (ja)
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JP2004525528A5 (https=
JP2004525528A (ja
Inventor
トルステン ザイデル，
ラルフ オットー，
カール シューマッヒャー，
トルステン シェーデル，
エックハルト マルクス，
ギュンター ラシャーン，
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Infineon Technologies AG
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Infineon Technologies AG
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Publication of JP2004525528A5 publication Critical patent/JP2004525528A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0474—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0611—Sorting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2002590411A 2001-05-17 2002-05-10 処理ツールにおいて基板上の欠陥を検出するための構成および方法 Expired - Fee Related JP3978140B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01112140A EP1258915A1 (en) 2001-05-17 2001-05-17 Method of detecting defects on a semiconductor device in a processing tool and an arrangement therefore
PCT/EP2002/005189 WO2002093639A2 (en) 2001-05-17 2002-05-10 Arrangement and method for detecting defects on a substrate in a processing tool

Publications (3)

Publication Number Publication Date
JP2004525528A JP2004525528A (ja) 2004-08-19
JP2004525528A5 JP2004525528A5 (https=) 2005-07-07
JP3978140B2 true JP3978140B2 (ja) 2007-09-19

Family

ID=8177464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002590411A Expired - Fee Related JP3978140B2 (ja) 2001-05-17 2002-05-10 処理ツールにおいて基板上の欠陥を検出するための構成および方法

Country Status (6)

Country Link
US (1) US20040117055A1 (https=)
EP (2) EP1258915A1 (https=)
JP (1) JP3978140B2 (https=)
KR (1) KR100788055B1 (https=)
TW (1) TW552655B (https=)
WO (1) WO2002093639A2 (https=)

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* Cited by examiner, † Cited by third party
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US7324193B2 (en) * 2006-03-30 2008-01-29 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US7576851B2 (en) * 2006-03-30 2009-08-18 Tokyo Electron Limited Creating a library for measuring a damaged structure formed on a wafer using optical metrology
US7623978B2 (en) * 2006-03-30 2009-11-24 Tokyo Electron Limited Damage assessment of a wafer using optical metrology
US7619731B2 (en) * 2006-03-30 2009-11-17 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US20080183331A1 (en) * 2007-01-31 2008-07-31 Jih-Hsien Yeh Semiconductor process tool
JP4324622B2 (ja) * 2007-04-18 2009-09-02 アドバンスド・マスク・インスペクション・テクノロジー株式会社 レチクル欠陥検査装置およびレチクル欠陥検査方法
US8120376B2 (en) * 2007-12-12 2012-02-21 Novellus Systems, Inc. Fault detection apparatuses and methods for fault detection of semiconductor processing tools
IL188825A0 (en) * 2008-01-16 2008-11-03 Orbotech Ltd Inspection of a substrate using multiple cameras
US7815824B2 (en) * 2008-02-26 2010-10-19 Molecular Imprints, Inc. Real time imprint process diagnostics for defects
US8919756B2 (en) 2008-08-28 2014-12-30 Tokyo Ohka Kogyo Co., Ltd. Substrate processing system, carrying device, and coating device
JP5449876B2 (ja) * 2008-08-28 2014-03-19 東京応化工業株式会社 搬送装置
US9214372B2 (en) 2008-08-28 2015-12-15 Tokyo Ohka Kogyo Co., Ltd. Substrate processing system, carrying device and coating device
US20100095862A1 (en) * 2008-10-22 2010-04-22 Molecular Imprints, Inc. Double Sidewall Angle Nano-Imprint Template
JP6017134B2 (ja) * 2011-12-13 2016-10-26 東京エレクトロン株式会社 生産効率化システム、生産効率化装置および生産効率化方法
US9996766B2 (en) 2015-05-01 2018-06-12 Corning Incorporated Imaging-based methods for detecting and measuring defects in extruded cellular ceramic articles
WO2016187180A1 (en) 2015-05-21 2016-11-24 Corning Incorporated Methods for inspecting cellular articles
US9791849B2 (en) 2015-05-26 2017-10-17 GlobalFoundries, Inc. Defect detection process in a semiconductor manufacturing environment
DE102016114190A1 (de) * 2016-08-01 2018-02-01 Schott Schweiz Ag Verfahren und Vorrichtung zur optischen Untersuchung transparenter Körper
TWI737207B (zh) * 2020-03-04 2021-08-21 鏵友益科技股份有限公司 半導體檢測模組
US11423526B2 (en) * 2020-11-13 2022-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Optical inspection of a wafer
KR102911513B1 (ko) * 2021-08-17 2026-01-12 도쿄엘렉트론가부시키가이샤 반도체 플라즈마 공정 챔버 내의 소모성 부품의 특성을 측정하기 위한 광센서

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US3558223A (en) * 1968-10-25 1971-01-26 Xerox Corp Document centering apparatus
US4641967A (en) * 1985-10-11 1987-02-10 Tencor Instruments Particle position correlator and correlation method for a surface scanner
US4881863A (en) * 1987-12-17 1989-11-21 Primary Systems Corporation Apparatus for inspecting wafers
US5124927A (en) * 1990-03-02 1992-06-23 International Business Machines Corp. Latent-image control of lithography tools
US5274434A (en) * 1990-04-02 1993-12-28 Hitachi, Ltd. Method and apparatus for inspecting foreign particles on real time basis in semiconductor mass production line
US5949901A (en) * 1996-03-21 1999-09-07 Nichani; Sanjay Semiconductor device image inspection utilizing image subtraction and threshold imaging
US6594012B2 (en) * 1996-07-05 2003-07-15 Canon Kabushiki Kaisha Exposure apparatus
JPH10213422A (ja) * 1997-01-29 1998-08-11 Hitachi Ltd パタ−ン検査装置
US5909276A (en) * 1997-03-31 1999-06-01 Microtherm, Llc Optical inspection module and method for detecting particles and defects on substrates in integrated process tools
US6002199A (en) * 1997-05-30 1999-12-14 Candescent Technologies Corporation Structure and fabrication of electron-emitting device having ladder-like emitter electrode
KR100274596B1 (ko) * 1997-06-05 2000-12-15 윤종용 반도체장치 제조용 노광설비의 스테이지 홀더 상의 파티클 감지방법과 이를 이용한 감지장치 및 그 제어방법
JP3397101B2 (ja) * 1997-10-29 2003-04-14 株式会社日立製作所 欠陥検査方法および装置
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US6956963B2 (en) * 1998-07-08 2005-10-18 Ismeca Europe Semiconductor Sa Imaging for a machine-vision system
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Also Published As

Publication number Publication date
KR20030096400A (ko) 2003-12-24
EP1390974A2 (en) 2004-02-25
WO2002093639A3 (en) 2003-03-20
KR100788055B1 (ko) 2007-12-21
TW552655B (en) 2003-09-11
EP1258915A1 (en) 2002-11-20
US20040117055A1 (en) 2004-06-17
WO2002093639A2 (en) 2002-11-21
JP2004525528A (ja) 2004-08-19

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