JP3965935B2 - 電気光学装置及び投射型表示装置 - Google Patents
電気光学装置及び投射型表示装置 Download PDFInfo
- Publication number
- JP3965935B2 JP3965935B2 JP2001138821A JP2001138821A JP3965935B2 JP 3965935 B2 JP3965935 B2 JP 3965935B2 JP 2001138821 A JP2001138821 A JP 2001138821A JP 2001138821 A JP2001138821 A JP 2001138821A JP 3965935 B2 JP3965935 B2 JP 3965935B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- electro
- optical device
- film
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010410 layer Substances 0.000 claims description 209
- 239000010408 film Substances 0.000 claims description 206
- 239000003990 capacitor Substances 0.000 claims description 87
- 239000000758 substrate Substances 0.000 claims description 83
- 230000031700 light absorption Effects 0.000 claims description 74
- 239000010409 thin film Substances 0.000 claims description 55
- 239000011229 interlayer Substances 0.000 claims description 31
- 238000003860 storage Methods 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims 1
- 239000000382 optic material Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 19
- 229920005591 polysilicon Polymers 0.000 description 19
- 239000004973 liquid crystal related substance Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 239000003086 colorant Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- 239000003870 refractory metal Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Projection Apparatus (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001138821A JP3965935B2 (ja) | 2000-07-26 | 2001-05-09 | 電気光学装置及び投射型表示装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-225419 | 2000-07-26 | ||
| JP2000225419 | 2000-07-26 | ||
| JP2001138821A JP3965935B2 (ja) | 2000-07-26 | 2001-05-09 | 電気光学装置及び投射型表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002107763A JP2002107763A (ja) | 2002-04-10 |
| JP2002107763A5 JP2002107763A5 (enExample) | 2004-12-24 |
| JP3965935B2 true JP3965935B2 (ja) | 2007-08-29 |
Family
ID=26596708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001138821A Expired - Fee Related JP3965935B2 (ja) | 2000-07-26 | 2001-05-09 | 電気光学装置及び投射型表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3965935B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3788387B2 (ja) * | 2002-05-10 | 2006-06-21 | セイコーエプソン株式会社 | 電気光学装置および電気光学装置の製造方法 |
| JP4324441B2 (ja) * | 2003-10-09 | 2009-09-02 | シャープ株式会社 | 素子基板、表示装置 |
| JP2005222019A (ja) | 2004-01-07 | 2005-08-18 | Seiko Epson Corp | 電気光学装置及び電子機器、並びに電気光学装置の製造方法 |
| JP5151337B2 (ja) * | 2007-09-14 | 2013-02-27 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| CN112752865A (zh) | 2018-09-28 | 2021-05-04 | 唯亚威通讯技术有限公司 | 使用正向参数校正和增强的逆向工程的涂布控制 |
| TWI720806B (zh) * | 2020-02-03 | 2021-03-01 | 友達光電股份有限公司 | 發光二極體顯示器 |
-
2001
- 2001-05-09 JP JP2001138821A patent/JP3965935B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002107763A (ja) | 2002-04-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100442217B1 (ko) | 전기 광학 장치, 전기 광학 장치용 기판 및 투사형 표시장치 | |
| KR100537250B1 (ko) | 전기 광학 장치 및 전자기기 | |
| JP3669351B2 (ja) | 電気光学装置及び電子機器 | |
| JP3821067B2 (ja) | 電気光学装置及び電子機器 | |
| JP4599655B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP2004226954A (ja) | 電気光学装置及びその製造方法、並びに電子機器 | |
| JP3608531B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP3743291B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP3830361B2 (ja) | Ｔｆｔアレイ基板、電気光学装置及び投射型表示装置 | |
| JP3931547B2 (ja) | 電気光学装置及びその製造方法 | |
| JP4438312B2 (ja) | 電気光学装置及び電子機器 | |
| JP3849434B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP2001330821A (ja) | 電気光学装置 | |
| JP3965935B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP4496600B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP5141536B2 (ja) | 電気光学装置及び電子機器 | |
| JP3736330B2 (ja) | 電気光学装置 | |
| JP4023107B2 (ja) | 電気光学装置及びこれを具備する電子機器 | |
| JP4509463B2 (ja) | 電気光学装置及び電子機器 | |
| JP3731460B2 (ja) | 電気光学装置およびプロジェクタ | |
| JP4063260B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP3966305B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP3966304B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP4000827B2 (ja) | 電気光学装置及びその製造方法、並びに電子機器 | |
| JP4154965B2 (ja) | 電気光学基板、並びにこれを具備する電気光学装置及び電子機器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040122 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040122 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060206 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070116 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070316 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070508 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070521 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110608 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110608 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120608 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130608 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130608 Year of fee payment: 6 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |