JP3965029B2 - パターン化薄膜形成方法およびマイクロデバイスの製造方法 - Google Patents
パターン化薄膜形成方法およびマイクロデバイスの製造方法 Download PDFInfo
- Publication number
- JP3965029B2 JP3965029B2 JP2001176886A JP2001176886A JP3965029B2 JP 3965029 B2 JP3965029 B2 JP 3965029B2 JP 2001176886 A JP2001176886 A JP 2001176886A JP 2001176886 A JP2001176886 A JP 2001176886A JP 3965029 B2 JP3965029 B2 JP 3965029B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- patterned
- thin film
- layer
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 132
- 238000000034 method Methods 0.000 title claims description 126
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000010408 film Substances 0.000 claims description 179
- 238000000059 patterning Methods 0.000 claims description 43
- 238000005530 etching Methods 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 description 22
- 239000000126 substance Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000000696 magnetic material Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920002492 poly(sulfone) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 229920006163 vinyl copolymer Polymers 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910019233 CoFeNi Inorganic materials 0.000 description 1
- 229910015140 FeN Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Hall/Mr Elements (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001176886A JP3965029B2 (ja) | 2001-06-12 | 2001-06-12 | パターン化薄膜形成方法およびマイクロデバイスの製造方法 |
| US10/157,891 US6893802B2 (en) | 2001-06-12 | 2002-05-31 | Method of forming patterned thin film and method of fabricating micro device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001176886A JP3965029B2 (ja) | 2001-06-12 | 2001-06-12 | パターン化薄膜形成方法およびマイクロデバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002363730A JP2002363730A (ja) | 2002-12-18 |
| JP2002363730A5 JP2002363730A5 (https=) | 2004-10-14 |
| JP3965029B2 true JP3965029B2 (ja) | 2007-08-22 |
Family
ID=19017814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001176886A Expired - Fee Related JP3965029B2 (ja) | 2001-06-12 | 2001-06-12 | パターン化薄膜形成方法およびマイクロデバイスの製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6893802B2 (https=) |
| JP (1) | JP3965029B2 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3895281B2 (ja) | 2003-02-18 | 2007-03-22 | Tdk株式会社 | パターン形成方法、これを用いた磁気抵抗効果素子及び磁気ヘッドの製造方法、並びに、ヘッドサスペンションアセンブリ及び磁気ディスク装置 |
| US7649711B2 (en) * | 2004-10-29 | 2010-01-19 | Hitachi Global Storage Technologies Netherlands B.V. | Double notched shield and pole structure for stray field reduction in a magnetic head |
| GB2425401A (en) * | 2005-04-21 | 2006-10-25 | Stuart Philip Speakman | Manufacture of microstructures using peelable mask |
| CN100365157C (zh) * | 2005-11-11 | 2008-01-30 | 北京工业大学 | 硅基片上制备镧钡锰氧功能薄膜的方法 |
| EP2433316B1 (en) * | 2009-05-18 | 2013-10-16 | Imec | Patterning and contacting of magnetic layers |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0341843A3 (en) | 1988-05-09 | 1991-03-27 | International Business Machines Corporation | A process of forming a conductor pattern |
| JP2973874B2 (ja) | 1994-06-23 | 1999-11-08 | 信越化学工業株式会社 | パターン形成方法 |
| US5773200A (en) * | 1994-06-23 | 1998-06-30 | Shin-Etsu Chemical Co., Ltd. | Positive resist composition suitable for lift-off technique and pattern forming method |
| US5725997A (en) * | 1995-07-26 | 1998-03-10 | Tdk Corporation | Method for preparing a resist pattern of t-shaped cross section |
| JP2922855B2 (ja) | 1995-07-26 | 1999-07-26 | ティーディーケイ株式会社 | T形断面のレジストパターンおよびその製造方法ならびに磁気抵抗効果型薄膜素子 |
| JP2000124203A (ja) * | 1998-10-16 | 2000-04-28 | Shin Etsu Chem Co Ltd | 微細パターン形成方法 |
-
2001
- 2001-06-12 JP JP2001176886A patent/JP3965029B2/ja not_active Expired - Fee Related
-
2002
- 2002-05-31 US US10/157,891 patent/US6893802B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002363730A (ja) | 2002-12-18 |
| US20020187430A1 (en) | 2002-12-12 |
| US6893802B2 (en) | 2005-05-17 |
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