JP3965029B2 - パターン化薄膜形成方法およびマイクロデバイスの製造方法 - Google Patents

パターン化薄膜形成方法およびマイクロデバイスの製造方法 Download PDF

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Publication number
JP3965029B2
JP3965029B2 JP2001176886A JP2001176886A JP3965029B2 JP 3965029 B2 JP3965029 B2 JP 3965029B2 JP 2001176886 A JP2001176886 A JP 2001176886A JP 2001176886 A JP2001176886 A JP 2001176886A JP 3965029 B2 JP3965029 B2 JP 3965029B2
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JP
Japan
Prior art keywords
film
patterned
thin film
layer
mask
Prior art date
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Expired - Fee Related
Application number
JP2001176886A
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English (en)
Japanese (ja)
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JP2002363730A (ja
JP2002363730A5 (https=
Inventor
久義 渡辺
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TDK Corp
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TDK Corp
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Publication date
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Priority to JP2001176886A priority Critical patent/JP3965029B2/ja
Priority to US10/157,891 priority patent/US6893802B2/en
Publication of JP2002363730A publication Critical patent/JP2002363730A/ja
Publication of JP2002363730A5 publication Critical patent/JP2002363730A5/ja
Application granted granted Critical
Publication of JP3965029B2 publication Critical patent/JP3965029B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/38Treatment before imagewise removal, e.g. prebaking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Hall/Mr Elements (AREA)
JP2001176886A 2001-06-12 2001-06-12 パターン化薄膜形成方法およびマイクロデバイスの製造方法 Expired - Fee Related JP3965029B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001176886A JP3965029B2 (ja) 2001-06-12 2001-06-12 パターン化薄膜形成方法およびマイクロデバイスの製造方法
US10/157,891 US6893802B2 (en) 2001-06-12 2002-05-31 Method of forming patterned thin film and method of fabricating micro device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001176886A JP3965029B2 (ja) 2001-06-12 2001-06-12 パターン化薄膜形成方法およびマイクロデバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2002363730A JP2002363730A (ja) 2002-12-18
JP2002363730A5 JP2002363730A5 (https=) 2004-10-14
JP3965029B2 true JP3965029B2 (ja) 2007-08-22

Family

ID=19017814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001176886A Expired - Fee Related JP3965029B2 (ja) 2001-06-12 2001-06-12 パターン化薄膜形成方法およびマイクロデバイスの製造方法

Country Status (2)

Country Link
US (1) US6893802B2 (https=)
JP (1) JP3965029B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3895281B2 (ja) 2003-02-18 2007-03-22 Tdk株式会社 パターン形成方法、これを用いた磁気抵抗効果素子及び磁気ヘッドの製造方法、並びに、ヘッドサスペンションアセンブリ及び磁気ディスク装置
US7649711B2 (en) * 2004-10-29 2010-01-19 Hitachi Global Storage Technologies Netherlands B.V. Double notched shield and pole structure for stray field reduction in a magnetic head
GB2425401A (en) * 2005-04-21 2006-10-25 Stuart Philip Speakman Manufacture of microstructures using peelable mask
CN100365157C (zh) * 2005-11-11 2008-01-30 北京工业大学 硅基片上制备镧钡锰氧功能薄膜的方法
EP2433316B1 (en) * 2009-05-18 2013-10-16 Imec Patterning and contacting of magnetic layers

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0341843A3 (en) 1988-05-09 1991-03-27 International Business Machines Corporation A process of forming a conductor pattern
JP2973874B2 (ja) 1994-06-23 1999-11-08 信越化学工業株式会社 パターン形成方法
US5773200A (en) * 1994-06-23 1998-06-30 Shin-Etsu Chemical Co., Ltd. Positive resist composition suitable for lift-off technique and pattern forming method
US5725997A (en) * 1995-07-26 1998-03-10 Tdk Corporation Method for preparing a resist pattern of t-shaped cross section
JP2922855B2 (ja) 1995-07-26 1999-07-26 ティーディーケイ株式会社 T形断面のレジストパターンおよびその製造方法ならびに磁気抵抗効果型薄膜素子
JP2000124203A (ja) * 1998-10-16 2000-04-28 Shin Etsu Chem Co Ltd 微細パターン形成方法

Also Published As

Publication number Publication date
JP2002363730A (ja) 2002-12-18
US20020187430A1 (en) 2002-12-12
US6893802B2 (en) 2005-05-17

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