JP3963987B2 - フォトレジスト - Google Patents

フォトレジスト Download PDF

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Publication number
JP3963987B2
JP3963987B2 JP32508396A JP32508396A JP3963987B2 JP 3963987 B2 JP3963987 B2 JP 3963987B2 JP 32508396 A JP32508396 A JP 32508396A JP 32508396 A JP32508396 A JP 32508396A JP 3963987 B2 JP3963987 B2 JP 3963987B2
Authority
JP
Japan
Prior art keywords
photospeed
control agent
substituted
photoresist
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP32508396A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09179303A5 (enExample
JPH09179303A (ja
Inventor
ジェイムズ・ダブリュ・サッカリー
ピーター・アール・ヘイガーティー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
DuPont Electronic Materials International LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC, DuPont Electronic Materials International LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of JPH09179303A publication Critical patent/JPH09179303A/ja
Publication of JPH09179303A5 publication Critical patent/JPH09179303A5/ja
Application granted granted Critical
Publication of JP3963987B2 publication Critical patent/JP3963987B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP32508396A 1995-12-05 1996-12-05 フォトレジスト Expired - Lifetime JP3963987B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/567630 1995-12-05
US08/567,630 US5879856A (en) 1995-12-05 1995-12-05 Chemically amplified positive photoresists

Publications (3)

Publication Number Publication Date
JPH09179303A JPH09179303A (ja) 1997-07-11
JPH09179303A5 JPH09179303A5 (enExample) 2004-11-11
JP3963987B2 true JP3963987B2 (ja) 2007-08-22

Family

ID=24267981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32508396A Expired - Lifetime JP3963987B2 (ja) 1995-12-05 1996-12-05 フォトレジスト

Country Status (5)

Country Link
US (2) US5879856A (enExample)
EP (1) EP0783136B1 (enExample)
JP (1) JP3963987B2 (enExample)
KR (1) KR100500750B1 (enExample)
DE (1) DE69624085T2 (enExample)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
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EP0537524A1 (en) * 1991-10-17 1993-04-21 Shipley Company Inc. Radiation sensitive compositions and methods
JPH08110638A (ja) * 1994-10-13 1996-04-30 Hitachi Chem Co Ltd 感光性樹脂組成物およびレジスト像の製造法
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JP3955385B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 パターン形成方法
US7704668B1 (en) 1998-08-04 2010-04-27 Rohm And Haas Electronic Materials Llc Photoresist compositions and methods and articles of manufacture comprising same
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US6280911B1 (en) * 1998-09-10 2001-08-28 Shipley Company, L.L.C. Photoresist compositions comprising blends of ionic and non-ionic photoacid generators
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US6936398B2 (en) 2001-05-09 2005-08-30 Massachusetts Institute Of Technology Resist with reduced line edge roughness
KR20090036153A (ko) * 2001-05-11 2009-04-13 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 후막 포토레지스트 및 그의 사용방법
US6743563B2 (en) * 2001-08-15 2004-06-01 Shipley Company, L.L.C. Photoresist compositions
US7666579B1 (en) * 2001-09-17 2010-02-23 Serenity Technologies, Inc. Method and apparatus for high density storage of analog data in a durable medium
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US20040131970A1 (en) * 2003-01-07 2004-07-08 Meagley Robert P. Photodefinable polymers for semiconductor applications
US7402373B2 (en) * 2004-02-05 2008-07-22 E.I. Du Pont De Nemours And Company UV radiation blocking protective layers compatible with thick film pastes
TWI322334B (en) 2004-07-02 2010-03-21 Rohm & Haas Elect Mat Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein
US7175944B2 (en) * 2004-08-31 2007-02-13 Micron Technology, Inc. Prevention of photoresist scumming
JP4789599B2 (ja) 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジスト組成物
KR101143005B1 (ko) * 2004-12-14 2012-05-08 삼성전자주식회사 마스크 및 이를 이용한 반도체 소자의 제조 방법 및 박막트랜지스터 표시판의 제조 방법
EP1691238A3 (en) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
EP1762895B1 (en) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
EP1829942B1 (en) 2006-02-28 2012-09-26 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
TWI598223B (zh) 2006-03-10 2017-09-11 羅門哈斯電子材料有限公司 用於光微影之組成物及製程
EP2420892A1 (en) 2006-10-30 2012-02-22 Rohm and Haas Electronic Materials LLC Compositions and processes for immersion lithography
JP4355725B2 (ja) * 2006-12-25 2009-11-04 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
TWI374478B (en) 2007-02-13 2012-10-11 Rohm & Haas Elect Mat Electronic device manufacture
TWI460535B (zh) 2007-03-12 2014-11-11 羅門哈斯電子材料有限公司 酚系聚合物及含該酚系聚合物之光阻
US20080248331A1 (en) 2007-04-06 2008-10-09 Rohm And Haas Electronic Materials Llc Coating composition
KR101347284B1 (ko) * 2007-09-28 2014-01-07 삼성전자주식회사 광산발생제 및 이를 포함하는 화학증폭형 레지스트 조성물
EP2056162B1 (en) 2007-11-05 2016-05-04 Rohm and Haas Electronic Materials LLC Process for immersion lithography
JP2009199061A (ja) 2007-11-12 2009-09-03 Rohm & Haas Electronic Materials Llc オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
JP4577354B2 (ja) * 2007-12-18 2010-11-10 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物およびネガ型感放射線性樹脂組成物
US9519216B2 (en) * 2008-02-04 2016-12-13 Fujifilm Electronic Materials U.S.A., Inc. Positive photosensitive resin compositions
EP2189847A3 (en) 2008-11-19 2010-07-21 Rohm and Haas Electronic Materials LLC Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography
EP2189846B1 (en) 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Process for photolithography applying a photoresist composition comprising a block copolymer
EP2189845B1 (en) 2008-11-19 2017-08-02 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2784584A1 (en) 2008-11-19 2014-10-01 Rohm and Haas Electronic Materials LLC Compositions comprising sulfonamide material and processes for photolithography
US8575245B2 (en) * 2008-12-23 2013-11-05 Novomer, Inc. Tunable polymer compositions
EP2204392A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2204694A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
TW201106101A (en) * 2009-06-01 2011-02-16 Fujifilm Electronic Materials Chemically amplified positive photoresist composition
US10180627B2 (en) 2009-06-08 2019-01-15 Rohm And Haas Electronic Materials Llc Processes for photolithography
KR101855112B1 (ko) 2009-06-22 2018-05-04 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 광산 발생제 및 이를 포함하는 포토레지스트
TWI541226B (zh) * 2010-11-15 2016-07-11 羅門哈斯電子材料有限公司 鹼反應性光酸產生劑及包含該光酸產生劑之光阻劑
JP5961363B2 (ja) 2010-11-15 2016-08-02 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ラクトン光酸発生剤、これを含む樹脂およびフォトレジスト
JP2012113302A (ja) 2010-11-15 2012-06-14 Rohm & Haas Electronic Materials Llc 塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法
JP6144005B2 (ja) 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 糖成分を含む組成物およびフォトリソグラフィ方法
EP2472320A2 (en) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Compositions comprising base-reactive component and processes for photolithography
EP2511766B1 (en) 2011-04-14 2013-07-31 Rohm and Haas Electronic Materials LLC Topcoat compositions for photoresist and immersion photolithography process using them
JP5846889B2 (ja) * 2011-12-14 2016-01-20 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物
TWI527792B (zh) 2012-06-26 2016-04-01 羅門哈斯電子材料有限公司 光酸產生劑、含該光酸產生劑之光阻劑及含該光阻劑之經塗覆物件
JP5913241B2 (ja) 2012-09-15 2016-04-27 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 複数の酸発生剤化合物を含むフォトレジスト
US9067909B2 (en) 2013-08-28 2015-06-30 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
US9046767B2 (en) 2013-10-25 2015-06-02 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
TWI646397B (zh) 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
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CN109928904A (zh) 2017-11-30 2019-06-25 罗门哈斯电子材料有限责任公司 两性离子化合物和包括其的光致抗蚀剂
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Also Published As

Publication number Publication date
EP0783136B1 (en) 2002-10-02
KR970049038A (ko) 1997-07-29
EP0783136A2 (en) 1997-07-09
KR100500750B1 (ko) 2006-01-27
US6300035B1 (en) 2001-10-09
DE69624085T2 (de) 2003-06-18
JPH09179303A (ja) 1997-07-11
US5879856A (en) 1999-03-09
DE69624085D1 (de) 2002-11-07
EP0783136A3 (en) 1998-08-19

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