JP3957549B2 - 基板処埋装置 - Google Patents

基板処埋装置 Download PDF

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Publication number
JP3957549B2
JP3957549B2 JP2002104011A JP2002104011A JP3957549B2 JP 3957549 B2 JP3957549 B2 JP 3957549B2 JP 2002104011 A JP2002104011 A JP 2002104011A JP 2002104011 A JP2002104011 A JP 2002104011A JP 3957549 B2 JP3957549 B2 JP 3957549B2
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JP
Japan
Prior art keywords
gas
gas supply
buffer chamber
substrate processing
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002104011A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003297818A5 (zh
JP2003297818A (ja
Inventor
忠司 紺谷
一行 豊田
武敏 佐藤
徹 加賀谷
信人 嶋
信雄 石丸
正憲 境
和幸 奥田
泰志 八木
誠治 渡辺
泰夫 国井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Kokusai Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2002104011A priority Critical patent/JP3957549B2/ja
Priority to KR1020030021100A priority patent/KR100829327B1/ko
Priority to CN2010102436568A priority patent/CN101985747A/zh
Priority to CNB031093434A priority patent/CN100459028C/zh
Priority to CNB2005101186672A priority patent/CN100480421C/zh
Priority to CN 200510118668 priority patent/CN1789489A/zh
Priority to TW092107724A priority patent/TWI222677B/zh
Priority to US10/406,279 priority patent/US20040025786A1/en
Priority to CN2008101795814A priority patent/CN101435074B/zh
Publication of JP2003297818A publication Critical patent/JP2003297818A/ja
Publication of JP2003297818A5 publication Critical patent/JP2003297818A5/ja
Application granted granted Critical
Publication of JP3957549B2 publication Critical patent/JP3957549B2/ja
Priority to US11/933,190 priority patent/US20080251015A1/en
Priority to US11/933,169 priority patent/US8047158B2/en
Priority to US11/933,208 priority patent/US7900580B2/en
Priority to KR1020070110898A priority patent/KR100802232B1/ko
Priority to KR1020070110899A priority patent/KR100802233B1/ko
Priority to KR1020070115418A priority patent/KR100813367B1/ko
Priority to US12/823,001 priority patent/US8261692B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002104011A 2002-04-05 2002-04-05 基板処埋装置 Expired - Lifetime JP3957549B2 (ja)

Priority Applications (16)

Application Number Priority Date Filing Date Title
JP2002104011A JP3957549B2 (ja) 2002-04-05 2002-04-05 基板処埋装置
KR1020030021100A KR100829327B1 (ko) 2002-04-05 2003-04-03 기판 처리 장치 및 반응 용기
CN2008101795814A CN101435074B (zh) 2002-04-05 2003-04-04 基板处理装置
CNB031093434A CN100459028C (zh) 2002-04-05 2003-04-04 基板处理装置及反应容器
CNB2005101186672A CN100480421C (zh) 2002-04-05 2003-04-04 反应容器
CN 200510118668 CN1789489A (zh) 2002-04-05 2003-04-04 基板处理装置
TW092107724A TWI222677B (en) 2002-04-05 2003-04-04 Treatment device of substrate
US10/406,279 US20040025786A1 (en) 2002-04-05 2003-04-04 Substrate processing apparatus and reaction container
CN2010102436568A CN101985747A (zh) 2002-04-05 2003-04-04 基板处理装置
US11/933,208 US7900580B2 (en) 2002-04-05 2007-10-31 Substrate processing apparatus and reaction container
US11/933,190 US20080251015A1 (en) 2002-04-05 2007-10-31 Substrate Processing Apparatus and Reaction Container
US11/933,169 US8047158B2 (en) 2002-04-05 2007-10-31 Substrate processing apparatus and reaction container
KR1020070110899A KR100802233B1 (ko) 2002-04-05 2007-11-01 반응 용기
KR1020070110898A KR100802232B1 (ko) 2002-04-05 2007-11-01 기판 처리 장치
KR1020070115418A KR100813367B1 (ko) 2002-04-05 2007-11-13 기판 처리 장치 및 처리관
US12/823,001 US8261692B2 (en) 2002-04-05 2010-06-24 Substrate processing apparatus and reaction container

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002104011A JP3957549B2 (ja) 2002-04-05 2002-04-05 基板処埋装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2004127686A Division JP3960987B2 (ja) 2004-04-23 2004-04-23 反応容器
JP2007104727A Division JP4746581B2 (ja) 2007-04-12 2007-04-12 基板処理装置

Publications (3)

Publication Number Publication Date
JP2003297818A JP2003297818A (ja) 2003-10-17
JP2003297818A5 JP2003297818A5 (zh) 2005-03-03
JP3957549B2 true JP3957549B2 (ja) 2007-08-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002104011A Expired - Lifetime JP3957549B2 (ja) 2002-04-05 2002-04-05 基板処埋装置

Country Status (2)

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JP (1) JP3957549B2 (zh)
CN (3) CN101435074B (zh)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
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KR100829327B1 (ko) 2002-04-05 2008-05-13 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반응 용기
JP4204840B2 (ja) 2002-10-08 2009-01-07 株式会社日立国際電気 基板処埋装置
JP3973567B2 (ja) * 2003-01-17 2007-09-12 東京エレクトロン株式会社 薄膜の形成方法及び薄膜の形成装置
JP4329403B2 (ja) * 2003-05-19 2009-09-09 東京エレクトロン株式会社 プラズマ処理装置
KR100817644B1 (ko) * 2004-02-27 2008-03-27 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치
US20050287806A1 (en) 2004-06-24 2005-12-29 Hiroyuki Matsuura Vertical CVD apparatus and CVD method using the same
US7966969B2 (en) 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
JP4634155B2 (ja) * 2005-01-07 2011-02-16 株式会社日立国際電気 基板処理装置及び成膜方法
JP4426518B2 (ja) 2005-10-11 2010-03-03 東京エレクトロン株式会社 処理装置
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
KR100807216B1 (ko) 2006-09-29 2008-02-28 삼성전자주식회사 두께 균일성을 향상할 수 있는 박막 형성 장치 및 방법
JP4746581B2 (ja) * 2007-04-12 2011-08-10 株式会社日立国際電気 基板処理装置
JP5137462B2 (ja) * 2007-05-21 2013-02-06 株式会社日立国際電気 基板処理装置、ガス供給部および薄膜形成方法
KR100898038B1 (ko) * 2007-10-05 2009-05-19 한국원자력연구원 다층기판홀더 구조의 로드 락 챔버를 이용한 박막증착장치
KR100945429B1 (ko) * 2007-10-05 2010-03-05 한국원자력연구원 대량의 기판 장착 및 탈착 시스템을 이용한 양산형박막증착 장치
KR101101164B1 (ko) * 2008-04-01 2011-12-30 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치
JP5198299B2 (ja) 2008-04-01 2013-05-15 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
JP5549754B2 (ja) * 2008-08-29 2014-07-16 東京エレクトロン株式会社 成膜装置
JP5423205B2 (ja) * 2008-08-29 2014-02-19 東京エレクトロン株式会社 成膜装置
JP4938805B2 (ja) * 2009-01-13 2012-05-23 株式会社日立国際電気 基板処理装置
JP5114457B2 (ja) * 2009-07-10 2013-01-09 株式会社アルバック 触媒ｃｖｄ装置
KR101205242B1 (ko) * 2010-04-30 2012-11-27 주식회사 테라세미콘 플라즈마 처리 장치
JP5718031B2 (ja) * 2010-11-26 2015-05-13 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
TWI520177B (zh) 2010-10-26 2016-02-01 Hitachi Int Electric Inc 基板處理裝置、半導體裝置之製造方法及電腦可讀取的記錄媒體
JP2012248779A (ja) * 2011-05-31 2012-12-13 Spp Technologies Co Ltd 酸化シリコンのエッチング装置、そのエッチング方法、及びそのエッチングプログラム
US20130068161A1 (en) * 2011-09-15 2013-03-21 Applied Materials, Inc. Gas delivery and distribution for uniform process in linear-type large-area plasma reactor
JP5598728B2 (ja) * 2011-12-22 2014-10-01 株式会社ダイフク 不活性ガス注入装置
DE102012024340A1 (de) * 2012-12-13 2014-06-18 Oerlikon Trading Ag, Trübbach Plasmaquelle
JP5792215B2 (ja) * 2013-03-08 2015-10-07 国立大学法人東北大学 ホットワイヤ式処理装置
CN103646902A (zh) * 2013-11-26 2014-03-19 上海华力微电子有限公司 一种用于优化半导体工艺条件的气体注入管
CN103818861A (zh) * 2014-03-12 2014-05-28 合肥彩虹蓝光科技有限公司 一种反应室腔体上盖起降系统
JP6320903B2 (ja) * 2014-11-19 2018-05-09 東京エレクトロン株式会社 ノズル及びこれを用いた基板処理装置
CN105142324A (zh) * 2015-08-17 2015-12-09 深圳市华鼎星科技有限公司 一种线性等离子发生器
KR101760316B1 (ko) 2015-09-11 2017-07-21 주식회사 유진테크 기판처리장치
JP6737139B2 (ja) * 2016-11-14 2020-08-05 東京エレクトロン株式会社 ガスインジェクタ、及び縦型熱処理装置
JP6647260B2 (ja) * 2017-09-25 2020-02-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及びプログラム
JP6820816B2 (ja) * 2017-09-26 2021-01-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、反応管、半導体装置の製造方法、及びプログラム
WO2021059492A1 (ja) 2019-09-27 2021-04-01 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、昇降機構、半導体装置の製造方法及びプログラム
WO2021181450A1 (ja) * 2020-03-09 2021-09-16 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
CN111681977B (zh) * 2020-07-15 2024-01-05 北京北方华创微电子装备有限公司 储片盒吹扫组件和储片盒装置
CN117043917A (zh) 2021-03-19 2023-11-10 株式会社国际电气 基板保持件、基板处理装置、半导体装置的制造方法以及程序
KR20240118816A (ko) * 2022-01-07 2024-08-05 시바우라 기카이 가부시키가이샤 표면 처리 장치
CN115125523B (zh) * 2022-06-28 2023-09-08 北京北方华创微电子装备有限公司 反应腔室及半导体设备

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US5383984A (en) * 1992-06-17 1995-01-24 Tokyo Electron Limited Plasma processing apparatus etching tunnel-type
US6424091B1 (en) * 1998-10-26 2002-07-23 Matsushita Electric Works, Ltd. Plasma treatment apparatus and plasma treatment method performed by use of the same apparatus
TW452635B (en) * 1999-05-21 2001-09-01 Silicon Valley Group Thermal Gas delivery metering tube and gas delivery metering device using the same

Also Published As

Publication number Publication date
CN1789488A (zh) 2006-06-21
CN1789489A (zh) 2006-06-21
CN101435074A (zh) 2009-05-20
CN101435074B (zh) 2012-03-07
CN100480421C (zh) 2009-04-22
JP2003297818A (ja) 2003-10-17

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