JP3955415B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3955415B2
JP3955415B2 JP18245999A JP18245999A JP3955415B2 JP 3955415 B2 JP3955415 B2 JP 3955415B2 JP 18245999 A JP18245999 A JP 18245999A JP 18245999 A JP18245999 A JP 18245999A JP 3955415 B2 JP3955415 B2 JP 3955415B2
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JP
Japan
Prior art keywords
impurity region
contact hole
type well
conductivity type
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP18245999A
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English (en)
Japanese (ja)
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JP2000031087A (ja
Inventor
淳奎 張
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2000031087A publication Critical patent/JP2000031087A/ja
Application granted granted Critical
Publication of JP3955415B2 publication Critical patent/JP3955415B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP18245999A 1998-06-29 1999-06-28 半導体装置の製造方法 Expired - Fee Related JP3955415B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019980025173A KR100268410B1 (ko) 1998-06-29 1998-06-29 반도체 장치 및 그의 제조 방법
KR199825173 1998-06-29

Publications (2)

Publication Number Publication Date
JP2000031087A JP2000031087A (ja) 2000-01-28
JP3955415B2 true JP3955415B2 (ja) 2007-08-08

Family

ID=19541664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18245999A Expired - Fee Related JP3955415B2 (ja) 1998-06-29 1999-06-28 半導体装置の製造方法

Country Status (3)

Country Link
JP (1) JP3955415B2 (zh)
KR (1) KR100268410B1 (zh)
TW (1) TW417237B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505656B1 (ko) * 2002-12-10 2005-08-04 삼성전자주식회사 스토리지 전극과의 접촉 면적을 보다 확보하기 위해서비트 라인 방향으로 확장된 콘택체를 포함하는 반도체소자 제조 방법
KR101010467B1 (ko) * 2007-09-10 2011-01-21 주식회사 하이닉스반도체 반도체 소자의 콘택 플러그 형성방법

Also Published As

Publication number Publication date
KR20000003873A (ko) 2000-01-25
KR100268410B1 (ko) 2000-10-16
JP2000031087A (ja) 2000-01-28
TW417237B (en) 2001-01-01

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