JP3928729B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP3928729B2 JP3928729B2 JP2004156272A JP2004156272A JP3928729B2 JP 3928729 B2 JP3928729 B2 JP 3928729B2 JP 2004156272 A JP2004156272 A JP 2004156272A JP 2004156272 A JP2004156272 A JP 2004156272A JP 3928729 B2 JP3928729 B2 JP 3928729B2
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- 239000004065 semiconductor Substances 0.000 title claims description 122
- 239000011347 resin Substances 0.000 claims description 172
- 229920005989 resin Polymers 0.000 claims description 172
- 239000000758 substrate Substances 0.000 claims description 34
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 41
- 239000000463 material Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 22
- 238000010586 diagram Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 14
- 229920001721 polyimide Polymers 0.000 description 6
- 239000009719 polyimide resin Substances 0.000 description 6
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229920002577 polybenzoxazole Polymers 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Description
前記半導体基板に、前記電極を避けるように形成されてなる樹脂層と、
前記樹脂層上に設けられたランドと、
前記電極と前記ランドとを電気的に接続する配線と、
前記ランドに接合された外部端子と、
を有し、
前記樹脂層は、前記ランドの前記外部端子に対する接合面の中央部を避けて端部を支持する第1の樹脂部と、前記第1の樹脂部に隣接する第2の樹脂部と、を含み、
前記第1の樹脂部は、前記第2の樹脂部よりも弾性率が低い。本発明によれば、樹脂層は、弾性率の異なる2つの樹脂部を含んでいる。そして、弾性率が低い樹脂部(第1の樹脂部)によって、ランドの外部端子に対する接合面の端部が支持される。そのため、ランドと外部端子との界面に大きな力がかかった場合でも、ランドが変形することでランドと外部端子との剥離を防止することが可能な、信頼性の高い半導体装置を提供することができる。
(2)この半導体装置において、
前記第1の樹脂部は、前記接合面の前記中央部を囲む周縁部全体の下方に形成されていてもよい。
(3)この半導体装置において、
前記第1の樹脂部は、前記ランドの前記配線に対する接続部の下方を避けて、前記接合面の前記中央部を囲む周縁部の下方に形成され、
前記ランドの前記配線に対する前記接続部の下方に、前記第2の樹脂部の一部が形成されていてもよい。
(4)この半導体装置において、
複数の前記ランドが設けられ、
それぞれの前記ランドの前記接合面の前記端部は、前記複数のランドを囲む領域の中央側の第1の端部と、前記領域の外方向を向く第2の端部と、を含み、
前記第1の樹脂部は、それぞれの前記ランドの前記第1の端部の下方を避けて、前記第2の端部の下方に形成されていてもよい。
(5)この半導体装置において、
前記第1の樹脂部は、上面が底面よりも大きくなるように側面が傾斜していてもよい。
(6)この半導体装置において、
前記第1の樹脂部は、上面が底面よりも小さくなるように側面が傾斜していてもよい。
(7)この半導体装置において、
前記ランドが前記第1の樹脂部に接触しないように、前記第1の樹脂部は、前記第2の樹脂部に覆われていてもよい。
(8)この半導体装置において、
前記第1の樹脂部に接触するように、前記ランドが形成されていてもよい。
(9)本発明に係る半導体装置の製造方法は、集積回路を有し電極が形成されてなる半導体基板に、前記電極を避けるように樹脂層を形成すること、
前記樹脂層上に配置されたランドと、前記電極と前記ランドとを電気的に接続する配線とを形成すること、及び、
前記ランドに接合された外部端子を形成すること、
を含み、
前記樹脂層を、前記ランドの前記外部端子に対する接合面の中央部を避けて端部を支持するための第1の樹脂部と、前記第1の樹脂部に隣接する前記第2の樹脂部とを含むように形成し、
前記第1の樹脂部を、前記第2の樹脂部よりも弾性率が低くなるように形成する。本発明によれば、第1の樹脂部を、ランドの外部端子に対する接合面の端部を支持するように形成する。そのため、ランドと外部端子との界面に大きな力がかかった場合でも、ランドが変形することでランドと外部端子との剥離を防止することが可能な、信頼性の高い半導体装置を製造することができる。
図1及び図2は、本発明を適用した第1の実施の形態に係る半導体装置について説明するための図である。図1は、半導体装置1の平面図であり、図2は、図1のII−II線断面の一部拡大図である。
図12は、本発明を適用した第2の実施の形態に係る半導体装置について説明するための図である。本実施の形態に係る半導体装置は、樹脂層80を有する。樹脂層80は、第1の樹脂部82と第2の樹脂部84とを含む。第1の樹脂部82は、第2の樹脂部84よりも弾性率が低くなるように形成されてなる。そして、第1の樹脂部82は、図12に示すように、ランド32の配線34に対する接続部33の下方を避けて、接合面35の中央部を囲む周縁部の下方に形成されてなる。また、第2の樹脂部84は、図12に示すように、接続部33の下方に形成されてなる。言い換えると、接続部33の下方には、第2の樹脂部84の一部が形成されてなる。これによると、接続部33は第2の樹脂部84に支持されるため、ランド32に外力が加わった場合でも、接続部33が大きく変形することを防止することができる。そのため、配線パターン30が破断しにくい、信頼性の高い半導体装置を提供することができる。
図13は、本発明を適用した第3の実施の形態に係る半導体装置について説明するための図である。なお、図13では、説明のため、配線パターンを省略し、ランドの外部端子に対する接合面35を示している。本実施の形態に係る半導体装置には、複数のランドが設けられてなる(図示せず)。そして、それぞれのランドの外部端子に対する接合面35の端部は、第1の端部92と第2の端部94とを含む。第1の端部92は、接合面35の端部のうち、ランドを囲む領域90の中央側の部分である。また、第2の端部94は、接合面35の端部のうち、ランドを囲む領域90の外方向を向く部分である。
Claims (5)
- 集積回路を有し、電極が形成されてなる半導体基板と、
前記半導体基板に、前記電極を避けるように形成されてなる樹脂層と、
前記樹脂層上に設けられたランドと、
前記電極と前記ランドとを電気的に接続する配線と、
前記ランドに接合された外部端子と、
を有し、
前記樹脂層は、前記ランドの前記外部端子に対する接合面の中央部を避けて端部を支持する第1の樹脂部と、前記第1の樹脂部に隣接する第2の樹脂部と、を含み、
前記第1の樹脂部は、前記ランドの前記配線に対する接続部の下方を避けて、前記接合面の前記中央部を囲む周縁部の下方に形成され、
前記ランドの前記配線に対する前記接続部の下方に、前記第2の樹脂部の一部が形成されてなり、
前記第1の樹脂部は、前記第2の樹脂部よりも、弾性率が低い半導体装置。 - 請求項1記載の半導体装置において、
前記第1の樹脂部は、上面が底面よりも大きくなるように側面が傾斜してなる半導体装置。 - 請求項1記載の半導体装置において、
前記第1の樹脂部は、上面が底面よりも小さくなるように側面が傾斜してなる半導体装置。 - 請求項1から請求項3のいずれかに記載の半導体装置において、
前記ランドが前記第1の樹脂部に接触しないように、前記第1の樹脂部は、前記第2の樹脂部に覆われてなる半導体装置。 - 請求項1から請求項3のいずれかに記載の半導体装置において、
前記第1の樹脂部に接触するように、前記ランドが形成されてなる半導体装置。
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JP2004156272A JP3928729B2 (ja) | 2004-05-26 | 2004-05-26 | 半導体装置 |
US11/128,156 US7525193B2 (en) | 2004-05-26 | 2005-05-13 | Semiconductor device and method of manufacturing the same |
CNB2005100737894A CN100382284C (zh) | 2004-05-26 | 2005-05-24 | 半导体装置 |
CNB200710166802XA CN100524716C (zh) | 2004-05-26 | 2005-05-24 | 半导体装置 |
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JP2001291802A (ja) * | 2000-04-06 | 2001-10-19 | Shinko Electric Ind Co Ltd | 配線基板及びその製造方法ならびに半導体装置 |
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