JP3910080B2 - 発光ダイオード - Google Patents

発光ダイオード Download PDF

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Publication number
JP3910080B2
JP3910080B2 JP2002044708A JP2002044708A JP3910080B2 JP 3910080 B2 JP3910080 B2 JP 3910080B2 JP 2002044708 A JP2002044708 A JP 2002044708A JP 2002044708 A JP2002044708 A JP 2002044708A JP 3910080 B2 JP3910080 B2 JP 3910080B2
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JP
Japan
Prior art keywords
group
light
component
light emitting
emitting diode
Prior art date
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Expired - Fee Related
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JP2002044708A
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English (en)
Japanese (ja)
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JP2002338833A5 (enExample
JP2002338833A (ja
Inventor
克哉 大内
学 津村
晴美 坂本
雅幸 藤田
雅史 蔵本
倫英 三木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Kaneka Corp
Original Assignee
Nichia Corp
Kaneka Corp
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Filing date
Publication date
Application filed by Nichia Corp, Kaneka Corp filed Critical Nichia Corp
Priority to JP2002044708A priority Critical patent/JP3910080B2/ja
Publication of JP2002338833A publication Critical patent/JP2002338833A/ja
Publication of JP2002338833A5 publication Critical patent/JP2002338833A5/ja
Application granted granted Critical
Publication of JP3910080B2 publication Critical patent/JP3910080B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2002044708A 2001-02-23 2002-02-21 発光ダイオード Expired - Fee Related JP3910080B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002044708A JP3910080B2 (ja) 2001-02-23 2002-02-21 発光ダイオード

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-48549 2001-02-23
JP2001048549 2001-02-23
JP2002044708A JP3910080B2 (ja) 2001-02-23 2002-02-21 発光ダイオード

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005057011A Division JP2005232461A (ja) 2001-02-23 2005-03-02 光学材料用組成物、光学材料、その製造方法、並びにそれを用いた液晶表示装置

Publications (3)

Publication Number Publication Date
JP2002338833A JP2002338833A (ja) 2002-11-27
JP2002338833A5 JP2002338833A5 (enExample) 2005-09-02
JP3910080B2 true JP3910080B2 (ja) 2007-04-25

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Family Applications (1)

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JP2002044708A Expired - Fee Related JP3910080B2 (ja) 2001-02-23 2002-02-21 発光ダイオード

Country Status (1)

Country Link
JP (1) JP3910080B2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008023746A1 (fr) 2006-08-22 2008-02-28 Mitsubishi Chemical Corporation ÉLÉMENT DE DISPOSITIF SEMI-CONDUCTEUR, LIQUIDE POUR FORMER UN ÉLÉMENT DE DISPOSITIF SEMI-CONDUCTEUR, PROCÉDÉ DE FABRICATION D'UN ÉLÉMENT DE DISPOSITIF SEMI-CONDUCTEUR ET LIQUIDE POUR FORMER UN ÉLÉMENT DE DISPOSITIF SEMI-CONDUCTEUR UTILISANT LE PROC&Eacute
WO2009119841A1 (ja) 2008-03-28 2009-10-01 三菱化学株式会社 硬化性ポリシロキサン組成物、並びに、それを用いたポリシロキサン硬化物、光学部材、航空宇宙産業用部材、半導体発光装置、照明装置、及び画像表示装置

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4880837B2 (ja) * 2001-09-05 2012-02-22 株式会社カネカ 硬化性組成物および硬化物
JP2003073549A (ja) * 2001-09-05 2003-03-12 Kanegafuchi Chem Ind Co Ltd 光学材料用硬化性組成物、光学用材料、その製造方法およびそれを用いた発光ダイオード
JP5676068B2 (ja) * 2001-09-06 2015-02-25 株式会社カネカ 硬化性組成物、硬化物、その製造方法およびその硬化物により封止された発光ダイオード
DE60318570T2 (de) 2002-04-26 2009-01-08 Kaneka Corp. Härtbare zusammensetzung, härtendes produkt, herstellungsverfahren dafür und mit dem gehärteten produkt versiegelte lichtemittierende diode
MY151065A (en) 2003-02-25 2014-03-31 Kaneka Corp Curing composition and method for preparing same, light-shielding paste, light-shielding resin and method for producing same, package for light-emitting diode, and semiconductor device
TW200427111A (en) 2003-03-12 2004-12-01 Shinetsu Chemical Co Material for coating/protecting light-emitting semiconductor and the light-emitting semiconductor device
TWI373150B (en) 2003-07-09 2012-09-21 Shinetsu Chemical Co Silicone rubber composition, light-emitting semiconductor embedding/protecting material and light-emitting semiconductor device
JP4586967B2 (ja) * 2003-07-09 2010-11-24 信越化学工業株式会社 発光半導体被覆保護材及び発光半導体装置
JP4263051B2 (ja) 2003-07-31 2009-05-13 俊信 横尾 発光ダイオード
DE102004039111A1 (de) 2003-08-14 2005-04-14 Shin-Etsu Chemical Co., Ltd. Härtbare Silikonharzzusammensetzung
JP4493013B2 (ja) * 2003-10-08 2010-06-30 日亜化学工業株式会社 半導体装置
TW200513483A (en) 2003-10-10 2005-04-16 Shinetsu Chemical Co Curable composition
JP4803339B2 (ja) 2003-11-20 2011-10-26 信越化学工業株式会社 エポキシ・シリコーン混成樹脂組成物及び発光半導体装置
JP4895247B2 (ja) * 2004-04-05 2012-03-14 旭化成ワッカーシリコーン株式会社 接着性シリコーンゴム組成物
JP4300418B2 (ja) 2004-04-30 2009-07-22 信越化学工業株式会社 エポキシ・シリコーン混成樹脂組成物及び発光半導体装置
US7314770B2 (en) * 2004-11-18 2008-01-01 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
CN101107324B (zh) 2005-01-24 2012-02-01 迈图高新材料日本合同公司 发光元件封装用有机硅组合物及发光装置
EP2236543B1 (en) 2007-12-10 2014-02-26 Kaneka Corporation Polysiloxane compound, alkali-developable curable composition, insulating thin film using the same, and thin film transistor
EP2343326B1 (en) 2008-10-02 2018-08-15 Kaneka Corporation Photocurable composition and cured product
JP2010245477A (ja) * 2009-04-10 2010-10-28 Dow Corning Toray Co Ltd 光デバイス及びその製造方法
JP5305452B2 (ja) 2009-06-12 2013-10-02 信越化学工業株式会社 光半導体素子封止用樹脂組成物
JP2011009346A (ja) * 2009-06-24 2011-01-13 Shin-Etsu Chemical Co Ltd 光半導体装置
KR101749367B1 (ko) * 2009-12-17 2017-06-20 쓰리엠 이노베이티브 프로퍼티즈 컴파니 디스플레이 패널 어셈블리 및 이의 제조 방법
JP5489280B2 (ja) 2010-04-07 2014-05-14 信越化学工業株式会社 光半導体封止用エポキシ組成物
JP5640476B2 (ja) 2010-06-08 2014-12-17 信越化学工業株式会社 光半導体素子封止用樹脂組成物及び発光装置
JP5893874B2 (ja) 2011-09-02 2016-03-23 信越化学工業株式会社 光半導体装置
KR101454798B1 (ko) 2012-05-25 2014-10-28 다미폴리켐 주식회사 발광 다이오드 소자의 봉지재용 실록산 가교제
JP7221659B2 (ja) * 2017-11-17 2023-02-14 スタンレー電気株式会社 半導体発光装置
WO2020203597A1 (ja) 2019-04-01 2020-10-08 信越化学工業株式会社 自己接着性シリコーンゲル組成物及びその硬化物からなるシリコーンゲル
JP7512378B2 (ja) * 2019-10-09 2024-07-08 インテグリス・インコーポレーテッド 湿式エッチング湿式エッチング組成物及び方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008023746A1 (fr) 2006-08-22 2008-02-28 Mitsubishi Chemical Corporation ÉLÉMENT DE DISPOSITIF SEMI-CONDUCTEUR, LIQUIDE POUR FORMER UN ÉLÉMENT DE DISPOSITIF SEMI-CONDUCTEUR, PROCÉDÉ DE FABRICATION D'UN ÉLÉMENT DE DISPOSITIF SEMI-CONDUCTEUR ET LIQUIDE POUR FORMER UN ÉLÉMENT DE DISPOSITIF SEMI-CONDUCTEUR UTILISANT LE PROC&Eacute
WO2009119841A1 (ja) 2008-03-28 2009-10-01 三菱化学株式会社 硬化性ポリシロキサン組成物、並びに、それを用いたポリシロキサン硬化物、光学部材、航空宇宙産業用部材、半導体発光装置、照明装置、及び画像表示装置

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