JP3910041B2 - 窒化物半導体レーザ素子及びこれを備えた半導体光学装置 - Google Patents

窒化物半導体レーザ素子及びこれを備えた半導体光学装置 Download PDF

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JP3910041B2
JP3910041B2 JP2001330068A JP2001330068A JP3910041B2 JP 3910041 B2 JP3910041 B2 JP 3910041B2 JP 2001330068 A JP2001330068 A JP 2001330068A JP 2001330068 A JP2001330068 A JP 2001330068A JP 3910041 B2 JP3910041 B2 JP 3910041B2
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nitride semiconductor
region
film
growth
semiconductor laser
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Japanese (ja)
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JP2003133649A5 (enExample
JP2003133649A (ja
Inventor
貴之 湯浅
吉裕 上田
茂稔 伊藤
元隆 種谷
善平 谷
健作 元木
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Sharp Corp
Sumitomo Electric Industries Ltd
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Sharp Corp
Sumitomo Electric Industries Ltd
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Priority to JP2001330068A priority Critical patent/JP3910041B2/ja
Priority to PCT/JP2002/011186 priority patent/WO2003038957A1/ja
Priority to US10/493,137 priority patent/US7498608B2/en
Publication of JP2003133649A publication Critical patent/JP2003133649A/ja
Publication of JP2003133649A5 publication Critical patent/JP2003133649A5/ja
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Publication of JP3910041B2 publication Critical patent/JP3910041B2/ja
Priority to US12/211,577 priority patent/US7781244B2/en
Priority to US12/836,211 priority patent/US8334544B2/en
Priority to US13/688,021 priority patent/US8502238B2/en
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  • Semiconductor Lasers (AREA)
  • Chemical Vapour Deposition (AREA)
JP2001330068A 2001-10-29 2001-10-29 窒化物半導体レーザ素子及びこれを備えた半導体光学装置 Expired - Lifetime JP3910041B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001330068A JP3910041B2 (ja) 2001-10-29 2001-10-29 窒化物半導体レーザ素子及びこれを備えた半導体光学装置
PCT/JP2002/011186 WO2003038957A1 (fr) 2001-10-29 2002-10-28 Dispositif a semi-conducteur au nitrure, son procede de fabrication et appareil optique a semi-conducteur
US10/493,137 US7498608B2 (en) 2001-10-29 2002-10-28 Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device
US12/211,577 US7781244B2 (en) 2001-10-29 2008-09-16 Method of manufacturing nitride-composite semiconductor laser element, with disclocation control
US12/836,211 US8334544B2 (en) 2001-10-29 2010-07-14 Nitride semiconductor laser device including growth-inhibiting film at dislocation concentrated region
US13/688,021 US8502238B2 (en) 2001-10-29 2012-11-28 Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001330068A JP3910041B2 (ja) 2001-10-29 2001-10-29 窒化物半導体レーザ素子及びこれを備えた半導体光学装置

Related Child Applications (1)

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JP2006344919A Division JP2007131527A (ja) 2006-12-21 2006-12-21 窒化物半導体基板、窒化物半導体レーザ素子、窒化物半導体基板の製造方法、および窒化物半導体レーザ素子の製造方法

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JP2003133649A JP2003133649A (ja) 2003-05-09
JP2003133649A5 JP2003133649A5 (enExample) 2005-05-19
JP3910041B2 true JP3910041B2 (ja) 2007-04-25

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Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7609737B2 (en) 2003-07-10 2009-10-27 Nichia Corporation Nitride semiconductor laser element
JP4539077B2 (ja) * 2003-10-29 2010-09-08 日本電気株式会社 半導体素子の製造方法
US7655491B2 (en) 2004-05-12 2010-02-02 Showa Denko K.K. P-type Group III nitride semiconductor and production method thereof
JP2006229219A (ja) * 2004-05-12 2006-08-31 Showa Denko Kk ＩＩＩ族窒化物ｐ型半導体およびその製造方法
JP3833674B2 (ja) 2004-06-08 2006-10-18 松下電器産業株式会社 窒化物半導体レーザ素子
JP4895488B2 (ja) * 2004-08-26 2012-03-14 シャープ株式会社 窒化物半導体発光素子、その製造方法、およびウエハ
US8076165B2 (en) 2005-04-01 2011-12-13 Sharp Kabushiki Kaisha Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method
JP5135708B2 (ja) * 2006-04-27 2013-02-06 住友電気工業株式会社 Ｉｉｉ族窒化物系電子デバイスおよびエピタキシャル基板
WO2008002104A1 (en) * 2006-06-30 2008-01-03 Seoul Opto Device Co., Ltd. Method of forming p-type compound semiconductor layer
JP5168849B2 (ja) 2006-08-11 2013-03-27 住友電気工業株式会社 面発光レーザ素子およびその製造方法、ならびに面発光レーザアレイおよびその製造方法
JP4899740B2 (ja) * 2006-09-19 2012-03-21 パナソニック株式会社 半導体発光素子、半導体発光装置および製造方法
JP2008127252A (ja) * 2006-11-22 2008-06-05 Hitachi Cable Ltd 窒化物半導体インゴット及びこれから得られる窒化物半導体基板並びに窒化物半導体インゴットの製造方法
JP5018247B2 (ja) * 2007-06-01 2012-09-05 住友電気工業株式会社 ＧａＮ結晶の成長方法
JP5041902B2 (ja) * 2007-07-24 2012-10-03 三洋電機株式会社 半導体レーザ素子
JP5022136B2 (ja) 2007-08-06 2012-09-12 三洋電機株式会社 半導体素子の製造方法および半導体素子
JP2009170798A (ja) * 2008-01-18 2009-07-30 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ
JP2009224602A (ja) * 2008-03-17 2009-10-01 Sumitomo Electric Ind Ltd 窒化物半導体レーザ、窒化物半導体レーザを作製する方法、及び窒化物半導体レーザのためのエピタキシャルウエハ
JP2009280482A (ja) 2008-04-25 2009-12-03 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物単結晶自立基板およびそれを用いた半導体デバイスの製造方法
JP5093033B2 (ja) * 2008-09-30 2012-12-05 ソニー株式会社 半導体レーザの製造方法、半導体レーザ、光ピックアップおよび光ディスク装置
JP2009117875A (ja) * 2009-02-23 2009-05-28 Sharp Corp 窒化物半導体発光素子の製造方法
JP5332959B2 (ja) * 2009-06-29 2013-11-06 住友電気工業株式会社 窒化物系半導体光素子
JP5306935B2 (ja) * 2009-08-04 2013-10-02 大陽日酸株式会社 反応生成物の検知方法
JP2011223043A (ja) * 2011-08-09 2011-11-04 Sumitomo Electric Ind Ltd 半導体発光素子、および半導体発光素子を作製する方法
WO2013058352A1 (ja) * 2011-10-21 2013-04-25 三菱化学株式会社 Ｉｉｉ族窒化物半導体結晶
JP5451796B2 (ja) * 2012-03-06 2014-03-26 日本電信電話株式会社 窒化物半導体構造
WO2020065744A1 (ja) * 2018-09-26 2020-04-02 三菱電機株式会社 半導体レーザ、半導体レーザアレイおよび半導体レーザの製造方法
JP7384734B2 (ja) * 2020-04-07 2023-11-21 パナソニックホールディングス株式会社 半導体レーザ素子
JP7556246B2 (ja) 2020-09-23 2024-09-26 セイコーエプソン株式会社 発光装置、発光装置の製造方法およびプロジェクター

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