JP3893888B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

Info

Publication number
JP3893888B2
JP3893888B2 JP2001077423A JP2001077423A JP3893888B2 JP 3893888 B2 JP3893888 B2 JP 3893888B2 JP 2001077423 A JP2001077423 A JP 2001077423A JP 2001077423 A JP2001077423 A JP 2001077423A JP 3893888 B2 JP3893888 B2 JP 3893888B2
Authority
JP
Japan
Prior art keywords
standing wave
control unit
plasma
dielectric window
electromagnetic wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001077423A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002280361A5 (enExample
JP2002280361A (ja
Inventor
直志 板橋
直行 小藤
泰範 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001077423A priority Critical patent/JP3893888B2/ja
Priority to KR1020010052747A priority patent/KR20020074372A/ko
Priority to US09/944,376 priority patent/US20020129904A1/en
Priority to TW090121862A priority patent/TW520537B/zh
Publication of JP2002280361A publication Critical patent/JP2002280361A/ja
Priority to US10/408,242 priority patent/US6797112B2/en
Publication of JP2002280361A5 publication Critical patent/JP2002280361A5/ja
Application granted granted Critical
Publication of JP3893888B2 publication Critical patent/JP3893888B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H01J37/32284—Means for controlling or selecting resonance mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
JP2001077423A 2001-03-19 2001-03-19 プラズマ処理装置 Expired - Fee Related JP3893888B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001077423A JP3893888B2 (ja) 2001-03-19 2001-03-19 プラズマ処理装置
KR1020010052747A KR20020074372A (ko) 2001-03-19 2001-08-30 플라즈마 처리 장치 및 그 장치를 이용한 반도체 장치의제조 방법
US09/944,376 US20020129904A1 (en) 2001-03-19 2001-09-04 Plasma treatment apparatus and method of producing semiconductor device using the apparatus
TW090121862A TW520537B (en) 2001-03-19 2001-09-04 Plasma treatment apparatus and method of producing semiconductor device using the apparatus
US10/408,242 US6797112B2 (en) 2001-03-19 2003-04-08 Plasma treatment apparatus and method of producing semiconductor device using the apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001077423A JP3893888B2 (ja) 2001-03-19 2001-03-19 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2002280361A JP2002280361A (ja) 2002-09-27
JP2002280361A5 JP2002280361A5 (enExample) 2005-03-03
JP3893888B2 true JP3893888B2 (ja) 2007-03-14

Family

ID=18934185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001077423A Expired - Fee Related JP3893888B2 (ja) 2001-03-19 2001-03-19 プラズマ処理装置

Country Status (4)

Country Link
US (2) US20020129904A1 (enExample)
JP (1) JP3893888B2 (enExample)
KR (1) KR20020074372A (enExample)
TW (1) TW520537B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4209612B2 (ja) * 2001-12-19 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置
JP4204799B2 (ja) * 2002-04-09 2009-01-07 東京エレクトロン株式会社 プラズマ処理装置
JP3723783B2 (ja) * 2002-06-06 2005-12-07 東京エレクトロン株式会社 プラズマ処理装置
JP5312411B2 (ja) * 2003-02-14 2013-10-09 東京エレクトロン株式会社 プラズマ発生装置およびリモートプラズマ処理装置
JP2006244891A (ja) * 2005-03-04 2006-09-14 Tokyo Electron Ltd マイクロ波プラズマ処理装置
US20080190560A1 (en) * 2005-03-04 2008-08-14 Caizhong Tian Microwave Plasma Processing Apparatus
US20080029032A1 (en) * 2006-08-01 2008-02-07 Sun Jennifer Y Substrate support with protective layer for plasma resistance
JP2010232493A (ja) * 2009-03-27 2010-10-14 Tokyo Electron Ltd プラズマ処理装置
JP2012217761A (ja) * 2011-04-13 2012-11-12 Hitachi Ltd プラズマ滅菌装置
US9916998B2 (en) 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
US9685356B2 (en) 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
KR20190005029A (ko) * 2017-07-05 2019-01-15 삼성전자주식회사 플라즈마 처리 장치
CN107421713B (zh) * 2017-08-01 2020-02-18 大连理工大学 一种测量管内波动液膜波频和波速的系统
CN114762079B (zh) 2019-12-02 2025-02-28 朗姆研究公司 射频辅助等离子体生成中的阻抗变换
EP4381534A4 (en) * 2021-08-06 2025-08-13 Lam Res Corp TRANSFORMER-COUPLED PLASMA SOURCE DESIGN FOR THIN DIELECTRIC FILM DEPOSITION

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0368771A (ja) 1989-08-04 1991-03-25 Canon Inc マイクロ波プラズマ処理装置
EP0478283B1 (en) * 1990-09-26 1996-12-27 Hitachi, Ltd. Microwave plasma processing method and apparatus
JPH10199699A (ja) 1997-01-11 1998-07-31 Tokyo Electron Ltd プラズマ処理装置
US6143081A (en) * 1996-07-12 2000-11-07 Tokyo Electron Limited Film forming apparatus and method, and film modifying apparatus and method
JPH10134995A (ja) 1996-10-28 1998-05-22 Toshiba Corp プラズマ処理装置及びプラズマ処理方法
JP3815868B2 (ja) 1997-10-07 2006-08-30 東京エレクトロン株式会社 プラズマ処理装置
JP3555447B2 (ja) 1998-06-05 2004-08-18 株式会社日立製作所 ドライエッチング装置
JP2000077384A (ja) 1998-09-03 2000-03-14 Hitachi Ltd 半導体装置の製造方法およびプラズマ処理装置
JP4165946B2 (ja) 1998-11-30 2008-10-15 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP3430053B2 (ja) 1999-02-01 2003-07-28 東京エレクトロン株式会社 プラズマ処理装置
JP2000268994A (ja) 1999-03-16 2000-09-29 Fuji Electric Co Ltd 高周波グロー放電を利用した表面処理方法
JP3640204B2 (ja) 1999-04-14 2005-04-20 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
KR20020074372A (ko) 2002-09-30
US20020129904A1 (en) 2002-09-19
US20030203641A1 (en) 2003-10-30
JP2002280361A (ja) 2002-09-27
US6797112B2 (en) 2004-09-28
TW520537B (en) 2003-02-11

Similar Documents

Publication Publication Date Title
TWI492297B (zh) 電漿蝕刻方法、半導體裝置之製造方法、及電漿蝕刻裝置
JP3893888B2 (ja) プラズマ処理装置
TWI487027B (zh) Plasma oxidation treatment method
TWI430360B (zh) Plasma etching method and plasma etching device
KR101249611B1 (ko) 실리콘 산화막의 형성 방법, 기억 매체, 및 플라즈마 처리 장치
US20130065398A1 (en) Dry metal etching method
JP2016154234A (ja) サブ１０ｎｍパターニングを実現するための材料プロセシング
TWI390072B (zh) Formation method of silicon oxide film
JP2005508078A (ja) 高アスペクト比形態のエッチング方法
KR100762524B1 (ko) 반도체장치의 제조방법
JP2018037656A (ja) セルフアライン式マルチパターニングのためのその場スペーサ再整形方法及びシステム
KR20130023286A (ko) 에칭 방법 및 장치
US9111727B2 (en) Plasma tuning rods in microwave resonator plasma sources
JP5231232B2 (ja) プラズマ酸化処理方法、プラズマ処理装置、及び、記憶媒体
JP2005217240A (ja) ドライエッチング装置およびドライエッチング方法
JP6424249B2 (ja) シリコン及びゲルマニウムを含む基板におけるシリコンの優先的酸化のための方法
CN109997211B (zh) 用于自对准多重图案化技术的间隙壁形成
JP7418230B2 (ja) プラズマ処理方法及びプラズマ処理装置
US9728416B2 (en) Plasma tuning rods in microwave resonator plasma sources
KR102901233B1 (ko) 다중 컬러 패터닝 기술에 의한 라인 커팅 방법
JPH11354502A (ja) アンテナ構造体およびドライエッチング装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040330

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040330

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20041014

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20060418

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060620

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060818

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20061121

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20061204

LAPS Cancellation because of no payment of annual fees