JP2002280361A5 - - Google Patents
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- Publication number
- JP2002280361A5 JP2002280361A5 JP2001077423A JP2001077423A JP2002280361A5 JP 2002280361 A5 JP2002280361 A5 JP 2002280361A5 JP 2001077423 A JP2001077423 A JP 2001077423A JP 2001077423 A JP2001077423 A JP 2001077423A JP 2002280361 A5 JP2002280361 A5 JP 2002280361A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric window
- standing wave
- control unit
- processing apparatus
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005684 electric field Effects 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 2
- 230000005855 radiation Effects 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 230000006837 decompression Effects 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001077423A JP3893888B2 (ja) | 2001-03-19 | 2001-03-19 | プラズマ処理装置 |
| KR1020010052747A KR20020074372A (ko) | 2001-03-19 | 2001-08-30 | 플라즈마 처리 장치 및 그 장치를 이용한 반도체 장치의제조 방법 |
| US09/944,376 US20020129904A1 (en) | 2001-03-19 | 2001-09-04 | Plasma treatment apparatus and method of producing semiconductor device using the apparatus |
| TW090121862A TW520537B (en) | 2001-03-19 | 2001-09-04 | Plasma treatment apparatus and method of producing semiconductor device using the apparatus |
| US10/408,242 US6797112B2 (en) | 2001-03-19 | 2003-04-08 | Plasma treatment apparatus and method of producing semiconductor device using the apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001077423A JP3893888B2 (ja) | 2001-03-19 | 2001-03-19 | プラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002280361A JP2002280361A (ja) | 2002-09-27 |
| JP2002280361A5 true JP2002280361A5 (enExample) | 2005-03-03 |
| JP3893888B2 JP3893888B2 (ja) | 2007-03-14 |
Family
ID=18934185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001077423A Expired - Fee Related JP3893888B2 (ja) | 2001-03-19 | 2001-03-19 | プラズマ処理装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US20020129904A1 (enExample) |
| JP (1) | JP3893888B2 (enExample) |
| KR (1) | KR20020074372A (enExample) |
| TW (1) | TW520537B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4209612B2 (ja) * | 2001-12-19 | 2009-01-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP4204799B2 (ja) * | 2002-04-09 | 2009-01-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP3723783B2 (ja) * | 2002-06-06 | 2005-12-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5312411B2 (ja) * | 2003-02-14 | 2013-10-09 | 東京エレクトロン株式会社 | プラズマ発生装置およびリモートプラズマ処理装置 |
| US20080190560A1 (en) * | 2005-03-04 | 2008-08-14 | Caizhong Tian | Microwave Plasma Processing Apparatus |
| JP2006244891A (ja) * | 2005-03-04 | 2006-09-14 | Tokyo Electron Ltd | マイクロ波プラズマ処理装置 |
| US20080029032A1 (en) * | 2006-08-01 | 2008-02-07 | Sun Jennifer Y | Substrate support with protective layer for plasma resistance |
| JP2010232493A (ja) * | 2009-03-27 | 2010-10-14 | Tokyo Electron Ltd | プラズマ処理装置 |
| JP2012217761A (ja) * | 2011-04-13 | 2012-11-12 | Hitachi Ltd | プラズマ滅菌装置 |
| US9916998B2 (en) | 2012-12-04 | 2018-03-13 | Applied Materials, Inc. | Substrate support assembly having a plasma resistant protective layer |
| US9685356B2 (en) | 2012-12-11 | 2017-06-20 | Applied Materials, Inc. | Substrate support assembly having metal bonded protective layer |
| US10020218B2 (en) | 2015-11-17 | 2018-07-10 | Applied Materials, Inc. | Substrate support assembly with deposited surface features |
| KR20190005029A (ko) * | 2017-07-05 | 2019-01-15 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| CN107421713B (zh) * | 2017-08-01 | 2020-02-18 | 大连理工大学 | 一种测量管内波动液膜波频和波速的系统 |
| WO2021113387A1 (en) | 2019-12-02 | 2021-06-10 | Lam Research Corporation | Impedance transformation in radio-frequency-assisted plasma generation |
| US20250132127A1 (en) * | 2021-08-06 | 2025-04-24 | Lam Research Corporation | Transformer coupled plasma source design for thin dielectric film deposition |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0368771A (ja) | 1989-08-04 | 1991-03-25 | Canon Inc | マイクロ波プラズマ処理装置 |
| DE69123808T2 (de) * | 1990-09-26 | 1997-06-26 | Hitachi Ltd | Verfahren und Gerät zur Bearbeitung mittels Mikrowellenplasma |
| JPH10199699A (ja) | 1997-01-11 | 1998-07-31 | Tokyo Electron Ltd | プラズマ処理装置 |
| US6143081A (en) * | 1996-07-12 | 2000-11-07 | Tokyo Electron Limited | Film forming apparatus and method, and film modifying apparatus and method |
| JPH10134995A (ja) | 1996-10-28 | 1998-05-22 | Toshiba Corp | プラズマ処理装置及びプラズマ処理方法 |
| JP3815868B2 (ja) | 1997-10-07 | 2006-08-30 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP3555447B2 (ja) | 1998-06-05 | 2004-08-18 | 株式会社日立製作所 | ドライエッチング装置 |
| JP2000077384A (ja) | 1998-09-03 | 2000-03-14 | Hitachi Ltd | 半導体装置の製造方法およびプラズマ処理装置 |
| JP4165946B2 (ja) | 1998-11-30 | 2008-10-15 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
| JP3430053B2 (ja) | 1999-02-01 | 2003-07-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2000268994A (ja) | 1999-03-16 | 2000-09-29 | Fuji Electric Co Ltd | 高周波グロー放電を利用した表面処理方法 |
| JP3640204B2 (ja) | 1999-04-14 | 2005-04-20 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
-
2001
- 2001-03-19 JP JP2001077423A patent/JP3893888B2/ja not_active Expired - Fee Related
- 2001-08-30 KR KR1020010052747A patent/KR20020074372A/ko not_active Abandoned
- 2001-09-04 TW TW090121862A patent/TW520537B/zh not_active IP Right Cessation
- 2001-09-04 US US09/944,376 patent/US20020129904A1/en not_active Abandoned
-
2003
- 2003-04-08 US US10/408,242 patent/US6797112B2/en not_active Expired - Fee Related
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