JP3892115B2 - ディスプレイ及びディスプレイを備えた装置 - Google Patents
ディスプレイ及びディスプレイを備えた装置 Download PDFInfo
- Publication number
- JP3892115B2 JP3892115B2 JP19650097A JP19650097A JP3892115B2 JP 3892115 B2 JP3892115 B2 JP 3892115B2 JP 19650097 A JP19650097 A JP 19650097A JP 19650097 A JP19650097 A JP 19650097A JP 3892115 B2 JP3892115 B2 JP 3892115B2
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- JP
- Japan
- Prior art keywords
- region
- film
- display
- pixel
- pixel electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010408 film Substances 0.000 claims description 77
- 239000011159 matrix material Substances 0.000 claims description 50
- 239000004973 liquid crystal related substance Substances 0.000 claims description 27
- 239000011347 resin Substances 0.000 claims description 26
- 229920005989 resin Polymers 0.000 claims description 26
- 239000003990 capacitor Substances 0.000 claims description 23
- 239000010410 layer Substances 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 14
- 239000004925 Acrylic resin Substances 0.000 claims description 9
- 229920000178 Acrylic resin Polymers 0.000 claims description 9
- 239000000049 pigment Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000010365 information processing Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19650097A JP3892115B2 (ja) | 1997-07-07 | 1997-07-07 | ディスプレイ及びディスプレイを備えた装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19650097A JP3892115B2 (ja) | 1997-07-07 | 1997-07-07 | ディスプレイ及びディスプレイを備えた装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006299976A Division JP4832256B2 (ja) | 2006-11-06 | 2006-11-06 | 表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH1124107A JPH1124107A (ja) | 1999-01-29 |
| JPH1124107A5 JPH1124107A5 (enExample) | 2005-04-14 |
| JP3892115B2 true JP3892115B2 (ja) | 2007-03-14 |
Family
ID=16358797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19650097A Expired - Fee Related JP3892115B2 (ja) | 1997-07-07 | 1997-07-07 | ディスプレイ及びディスプレイを備えた装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3892115B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4860026B2 (ja) * | 1999-03-03 | 2012-01-25 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US6677613B1 (en) * | 1999-03-03 | 2004-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| EP2500941A3 (en) * | 1999-06-02 | 2017-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| TW478014B (en) | 1999-08-31 | 2002-03-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing thereof |
| TWI633371B (zh) | 2008-12-03 | 2018-08-21 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| US8664097B2 (en) * | 2010-09-13 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP2014078033A (ja) * | 2013-12-23 | 2014-05-01 | Semiconductor Energy Lab Co Ltd | 表示装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3221206B2 (ja) * | 1994-01-24 | 2001-10-22 | ソニー株式会社 | 表示パネル用半導体装置及びその製造方法 |
| JP3598545B2 (ja) * | 1994-10-27 | 2004-12-08 | セイコーエプソン株式会社 | カラーフィルタ、ブラックマトリックス、表示装置、アクティブマトリックス型液晶表示装置、及びその製造方法 |
| JP3184771B2 (ja) * | 1995-09-14 | 2001-07-09 | キヤノン株式会社 | アクティブマトリックス液晶表示装置 |
-
1997
- 1997-07-07 JP JP19650097A patent/JP3892115B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1124107A (ja) | 1999-01-29 |
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