JP3847454B2 - 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法 - Google Patents

遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法 Download PDF

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Publication number
JP3847454B2
JP3847454B2 JP13691898A JP13691898A JP3847454B2 JP 3847454 B2 JP3847454 B2 JP 3847454B2 JP 13691898 A JP13691898 A JP 13691898A JP 13691898 A JP13691898 A JP 13691898A JP 3847454 B2 JP3847454 B2 JP 3847454B2
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JP
Japan
Prior art keywords
group
general formula
substituent
alkyl group
photoresist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP13691898A
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English (en)
Japanese (ja)
Other versions
JPH11327147A5 (OSRAM
JPH11327147A (ja
Inventor
健一郎 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP13691898A priority Critical patent/JP3847454B2/ja
Priority to US09/264,036 priority patent/US6159655A/en
Priority to KR1019990009385A priority patent/KR100558190B1/ko
Publication of JPH11327147A publication Critical patent/JPH11327147A/ja
Publication of JPH11327147A5 publication Critical patent/JPH11327147A5/ja
Application granted granted Critical
Publication of JP3847454B2 publication Critical patent/JP3847454B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/107—Polyamide or polyurethane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP13691898A 1998-03-20 1998-05-19 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法 Expired - Fee Related JP3847454B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP13691898A JP3847454B2 (ja) 1998-03-20 1998-05-19 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法
US09/264,036 US6159655A (en) 1998-03-20 1999-03-08 Positive photoresist composition for exposure to far ultraviolet light
KR1019990009385A KR100558190B1 (ko) 1998-03-20 1999-03-19 원자외선 노광용 포지티브 포토레지스트 조성물

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7247898 1998-03-20
JP10-72478 1998-03-20
JP13691898A JP3847454B2 (ja) 1998-03-20 1998-05-19 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法

Publications (3)

Publication Number Publication Date
JPH11327147A JPH11327147A (ja) 1999-11-26
JPH11327147A5 JPH11327147A5 (OSRAM) 2005-02-24
JP3847454B2 true JP3847454B2 (ja) 2006-11-22

Family

ID=26413607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13691898A Expired - Fee Related JP3847454B2 (ja) 1998-03-20 1998-05-19 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法

Country Status (3)

Country Link
US (1) US6159655A (OSRAM)
JP (1) JP3847454B2 (OSRAM)
KR (1) KR100558190B1 (OSRAM)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
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TW457277B (en) * 1998-05-11 2001-10-01 Shinetsu Chemical Co Ester compounds, polymers, resist composition and patterning process
JP3844322B2 (ja) * 1998-07-02 2006-11-08 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
KR20000015014A (ko) * 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
US6790587B1 (en) * 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
US6787283B1 (en) * 1999-07-22 2004-09-07 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
KR100682169B1 (ko) * 1999-07-30 2007-02-12 주식회사 하이닉스반도체 신규의 포토레지스트용 공중합체 및 이를 이용한 포토레지스트조성물
JP3955419B2 (ja) * 1999-10-20 2007-08-08 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
KR20010040187A (ko) * 1999-10-28 2001-05-15 무네유키 가코우 포지티브 포토레지스트 조성물
KR100546105B1 (ko) * 1999-11-03 2006-01-24 주식회사 하이닉스반도체 신규의 포토레지스트용 중합체 및 이를 함유하는포토레지스트 조성물
JP4529245B2 (ja) * 1999-12-03 2010-08-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
KR20010054851A (ko) * 1999-12-08 2001-07-02 윤종용 지환식 감광성 폴리머 및 이를 포함하는 레지스트조성물과 그 제조방법
JP2001235865A (ja) * 2000-02-23 2001-08-31 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP4166402B2 (ja) * 2000-02-28 2008-10-15 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
AU2001244719A1 (en) * 2000-04-04 2001-10-15 Daikin Industries Ltd. Novel fluoropolymer having acid-reactive group and chemical amplification type photoresist composition containing the same
KR100527533B1 (ko) * 2000-06-21 2005-11-09 주식회사 하이닉스반도체 Ｔｉｐｓ 공정용 포토레지스트 중합체 및 이를 함유하는포토레지스트 조성물
JP4469080B2 (ja) * 2000-12-13 2010-05-26 信越化学工業株式会社 脂環構造を有する新規第三級アルコール化合物
JP4255100B2 (ja) * 2001-04-06 2009-04-15 富士フイルム株式会社 ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法
TW591329B (en) * 2001-04-21 2004-06-11 Samsung Electronics Co Ltd Acetal group containing norbornene copolymer for photoresist, method for producing the same and photoresist composition containing the same
US6737215B2 (en) 2001-05-11 2004-05-18 Clariant Finance (Bvi) Ltd Photoresist composition for deep ultraviolet lithography
US20030171773A1 (en) 2002-03-06 2003-09-11 Carrison Harold F. Methods for aneurysm repair
US6756180B2 (en) 2002-10-22 2004-06-29 International Business Machines Corporation Cyclic olefin-based resist compositions having improved image stability
JP5117484B2 (ja) * 2009-12-28 2013-01-16 東京応化工業株式会社 新規な化合物、及びその製造方法
KR101496976B1 (ko) * 2011-07-14 2015-03-02 스미토모 베이클리트 컴퍼니 리미티드 화학 방사선에 대한 이미지-와이즈 노광 후에 패턴화된 층을 형성하는 중합체 및 이의 조성물
JP6414237B2 (ja) * 2017-01-12 2018-10-31 住友ベークライト株式会社 ポリマー、ポリマーの製造方法、感光性樹脂組成物および電子装置

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JPH01140143A (ja) * 1987-11-27 1989-06-01 Tosoh Corp パターン形成材料
JP3200824B2 (ja) * 1991-09-06 2001-08-20 ジェイエスアール株式会社 感放射線性組成物
JP3000745B2 (ja) * 1991-09-19 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
JPH08202039A (ja) * 1995-01-30 1996-08-09 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
US6013416A (en) * 1995-06-28 2000-01-11 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
KR100253575B1 (ko) * 1996-06-24 2000-04-15 김영환 포토레지스트
EP0878738B1 (en) * 1997-05-12 2002-01-09 Fuji Photo Film Co., Ltd. Positive resist composition

Also Published As

Publication number Publication date
KR100558190B1 (ko) 2006-03-10
US6159655A (en) 2000-12-12
KR19990078077A (ko) 1999-10-25
JPH11327147A (ja) 1999-11-26

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