JP3843933B2 - 研磨パッド、研磨装置および研磨方法 - Google Patents

研磨パッド、研磨装置および研磨方法 Download PDF

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Publication number
JP3843933B2
JP3843933B2 JP2002327853A JP2002327853A JP3843933B2 JP 3843933 B2 JP3843933 B2 JP 3843933B2 JP 2002327853 A JP2002327853 A JP 2002327853A JP 2002327853 A JP2002327853 A JP 2002327853A JP 3843933 B2 JP3843933 B2 JP 3843933B2
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JP
Japan
Prior art keywords
polishing
polishing pad
holes
polished
long
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002327853A
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English (en)
Japanese (ja)
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JP2003300149A (ja
Inventor
俊一 澁木
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Sony Corp
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Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2002327853A priority Critical patent/JP3843933B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Priority to TW092102513A priority patent/TWI266673B/zh
Priority to US10/503,413 priority patent/US20050153633A1/en
Priority to PCT/JP2003/001305 priority patent/WO2003067641A1/ja
Priority to KR10-2004-7011783A priority patent/KR20040079965A/ko
Priority to CNB038033631A priority patent/CN100365773C/zh
Publication of JP2003300149A publication Critical patent/JP2003300149A/ja
Application granted granted Critical
Publication of JP3843933B2 publication Critical patent/JP3843933B2/ja
Priority to US11/725,679 priority patent/US20070190911A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2002327853A 2002-02-07 2002-11-12 研磨パッド、研磨装置および研磨方法 Expired - Fee Related JP3843933B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002327853A JP3843933B2 (ja) 2002-02-07 2002-11-12 研磨パッド、研磨装置および研磨方法
US10/503,413 US20050153633A1 (en) 2002-02-07 2003-02-07 Polishing pad, polishing apparatus, and polishing method
PCT/JP2003/001305 WO2003067641A1 (fr) 2002-02-07 2003-02-07 Tampon, dispositif et procede de polissage
KR10-2004-7011783A KR20040079965A (ko) 2002-02-07 2003-02-07 연마 패드, 연마 장치 및 연마 방법
TW092102513A TWI266673B (en) 2002-02-07 2003-02-07 Polishing pad, polishing device, and polishing method
CNB038033631A CN100365773C (zh) 2002-02-07 2003-02-07 抛光垫、抛光装置及抛光方法
US11/725,679 US20070190911A1 (en) 2002-02-07 2007-03-20 Polishing pad and forming method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-30322 2002-02-07
JP2002030322 2002-02-07
JP2002327853A JP3843933B2 (ja) 2002-02-07 2002-11-12 研磨パッド、研磨装置および研磨方法

Publications (2)

Publication Number Publication Date
JP2003300149A JP2003300149A (ja) 2003-10-21
JP3843933B2 true JP3843933B2 (ja) 2006-11-08

Family

ID=27736451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002327853A Expired - Fee Related JP3843933B2 (ja) 2002-02-07 2002-11-12 研磨パッド、研磨装置および研磨方法

Country Status (6)

Country Link
US (2) US20050153633A1 (zh)
JP (1) JP3843933B2 (zh)
KR (1) KR20040079965A (zh)
CN (1) CN100365773C (zh)
TW (1) TWI266673B (zh)
WO (1) WO2003067641A1 (zh)

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JP4620501B2 (ja) * 2005-03-04 2011-01-26 ニッタ・ハース株式会社 研磨パッド
KR101294863B1 (ko) * 2006-02-06 2013-08-08 도레이 카부시키가이샤 연마 패드 및 연마 장치
JP2007214379A (ja) * 2006-02-09 2007-08-23 Nec Electronics Corp 研磨パッド
DE202006004193U1 (de) * 2006-03-14 2006-06-08 Richter, Harald Adapterplatte für einen Vakuumsauger
JP2007266052A (ja) * 2006-03-27 2007-10-11 Nec Electronics Corp 研磨パッド、ｃｍｐ装置、研磨パッドの製造方法
JP2007290114A (ja) * 2006-03-27 2007-11-08 Toshiba Corp 研磨パッド、研磨方法及び研磨装置
US20080220702A1 (en) * 2006-07-03 2008-09-11 Sang Fang Chemical Industry Co., Ltd. Polishing pad having surface texture
US20080003935A1 (en) * 2006-07-03 2008-01-03 Chung-Chih Feng Polishing pad having surface texture
JP5308637B2 (ja) * 2007-07-11 2013-10-09 東洋ゴム工業株式会社 研磨パッド
US9180570B2 (en) 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
CN101987431B (zh) * 2009-08-06 2015-08-19 智胜科技股份有限公司 研磨方法、研磨垫与研磨系统
KR20140062475A (ko) * 2011-09-16 2014-05-23 도레이 카부시키가이샤 연마 패드
US9551075B2 (en) * 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
JP7113626B2 (ja) * 2018-01-12 2022-08-05 ニッタ・デュポン株式会社 研磨パッド
JP7351170B2 (ja) * 2019-09-26 2023-09-27 日本電気硝子株式会社 研磨パッド、及び研磨方法
CN114592401A (zh) * 2021-05-31 2022-06-07 清华大学 冰面抛光方法及装置
CN115805523A (zh) * 2022-12-29 2023-03-17 西安奕斯伟材料科技有限公司 定盘、抛光设备和抛光方法

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Also Published As

Publication number Publication date
CN100365773C (zh) 2008-01-30
CN1628374A (zh) 2005-06-15
US20050153633A1 (en) 2005-07-14
JP2003300149A (ja) 2003-10-21
TW200307588A (en) 2003-12-16
WO2003067641A1 (fr) 2003-08-14
TWI266673B (en) 2006-11-21
US20070190911A1 (en) 2007-08-16
KR20040079965A (ko) 2004-09-16

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