JP3828332B2 - 強誘電体メモリ - Google Patents

強誘電体メモリ Download PDF

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Publication number
JP3828332B2
JP3828332B2 JP2000087402A JP2000087402A JP3828332B2 JP 3828332 B2 JP3828332 B2 JP 3828332B2 JP 2000087402 A JP2000087402 A JP 2000087402A JP 2000087402 A JP2000087402 A JP 2000087402A JP 3828332 B2 JP3828332 B2 JP 3828332B2
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JP
Japan
Prior art keywords
ferroelectric
mos transistor
film
insulating film
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000087402A
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English (en)
Japanese (ja)
Other versions
JP2001274351A5 (enExample
JP2001274351A (ja
Inventor
豊太 森本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000087402A priority Critical patent/JP3828332B2/ja
Priority to US09/816,478 priority patent/US6504198B2/en
Publication of JP2001274351A publication Critical patent/JP2001274351A/ja
Publication of JP2001274351A5 publication Critical patent/JP2001274351A5/ja
Application granted granted Critical
Publication of JP3828332B2 publication Critical patent/JP3828332B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer

Landscapes

  • Semiconductor Memories (AREA)
JP2000087402A 2000-03-27 2000-03-27 強誘電体メモリ Expired - Fee Related JP3828332B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000087402A JP3828332B2 (ja) 2000-03-27 2000-03-27 強誘電体メモリ
US09/816,478 US6504198B2 (en) 2000-03-27 2001-03-26 Horizontal type ferroelectric memory and manufacturing method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000087402A JP3828332B2 (ja) 2000-03-27 2000-03-27 強誘電体メモリ

Publications (3)

Publication Number Publication Date
JP2001274351A JP2001274351A (ja) 2001-10-05
JP2001274351A5 JP2001274351A5 (enExample) 2005-06-30
JP3828332B2 true JP3828332B2 (ja) 2006-10-04

Family

ID=18603416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000087402A Expired - Fee Related JP3828332B2 (ja) 2000-03-27 2000-03-27 強誘電体メモリ

Country Status (2)

Country Link
US (1) US6504198B2 (enExample)
JP (1) JP3828332B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10131627B4 (de) * 2001-06-29 2006-08-10 Infineon Technologies Ag Verfahren zum Herstellen einer Halbleiterspeichereinrichtung
US6780653B2 (en) * 2002-06-06 2004-08-24 Micron Technology, Inc. Methods of forming magnetoresistive memory device assemblies
US6795329B2 (en) * 2002-06-20 2004-09-21 Infineon Technologies Aktiengesellschaft Memory integrated circuit
US20040163233A1 (en) * 2003-02-26 2004-08-26 Stefan Gernhardt Methods of forming electrical connections within ferroelectric devices
US7473596B2 (en) * 2003-12-19 2009-01-06 Micron Technology, Inc. Methods of forming memory cells
JP2005322737A (ja) * 2004-05-07 2005-11-17 Toshiba Corp 半導体記憶装置およびその製造方法
JP2006269764A (ja) * 2005-03-24 2006-10-05 Toshiba Corp 強誘電体記憶装置および製造方法
US7320934B2 (en) 2005-06-20 2008-01-22 Infineon Technologies Ag Method of forming a contact in a flash memory device
JP2006352005A (ja) * 2005-06-20 2006-12-28 Toshiba Corp 強誘電体記憶装置およびその製造方法
JP2008085178A (ja) * 2006-09-28 2008-04-10 Toshiba Corp 半導体装置及びその製造方法
US8803245B2 (en) 2008-06-30 2014-08-12 Mcafee, Inc. Method of forming stacked trench contacts and structures formed thereby
JP2010080628A (ja) * 2008-09-25 2010-04-08 Toshiba Corp 半導体記憶装置及びその製造方法
US10217794B2 (en) 2017-05-24 2019-02-26 Globalfoundries Singapore Pte. Ltd. Integrated circuits with vertical capacitors and methods for producing the same
JP7173909B2 (ja) * 2019-03-20 2022-11-16 キオクシア株式会社 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5566045A (en) * 1994-08-01 1996-10-15 Texas Instruments, Inc. High-dielectric-constant material electrodes comprising thin platinum layers
US6094370A (en) 1996-06-10 2000-07-25 Kabushiki Kaisha Toshiba Semiconductor memory device and various systems mounting them
JP3766181B2 (ja) 1996-06-10 2006-04-12 株式会社東芝 半導体記憶装置とそれを搭載したシステム
US6033919A (en) * 1996-10-25 2000-03-07 Texas Instruments Incorporated Method of forming sidewall capacitance structure
US6124164A (en) * 1998-09-17 2000-09-26 Micron Technology, Inc. Method of making integrated capacitor incorporating high K dielectric

Also Published As

Publication number Publication date
US20010048624A1 (en) 2001-12-06
JP2001274351A (ja) 2001-10-05
US6504198B2 (en) 2003-01-07

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