JP3812677B2 - 半導体装置の製造装置及び半導体装置の製造方法 - Google Patents
半導体装置の製造装置及び半導体装置の製造方法 Download PDFInfo
- Publication number
- JP3812677B2 JP3812677B2 JP2004267227A JP2004267227A JP3812677B2 JP 3812677 B2 JP3812677 B2 JP 3812677B2 JP 2004267227 A JP2004267227 A JP 2004267227A JP 2004267227 A JP2004267227 A JP 2004267227A JP 3812677 B2 JP3812677 B2 JP 3812677B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- bonding
- semiconductor device
- surface side
- device manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81208—Compression bonding applying unidirectional static pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Description
前記基板上面側から圧搾空気を吹き付けることにより、前記ボンディングステージに前記基板を押し付けること、
前記基板下面側から空気を排出することにより、前記ボンディングステージに前記基板を吸着させること、及び、
前記基板に半導体チップをボンディングすること、
を含む。本発明によれば、基板を載置するボンディングステージの基板載置面に基板を基板上面側から押し付けるように圧搾空気を吹き付けることにより、基板載置面に基板を基板下面側から吸着することが容易になるので、基板の反り、浮きが低減され、基板が平坦な状態で電子部品同士の圧着が確実に行うことができる。したがって、電気的な接合の信頼性を高めることができる半導体装置の製造方法を提供することができる。
(2)本発明に係る半導体装置の製造装置は、半導体チップを実装すべき基板を載置し、前記基板下面側の空気を排出する空気排出口を備えているボンディングステージと、
前記ボンディングステージに前記基板を前記基板上面側から押し付けるように圧搾空気を吹き付けるブロワと、
前記基板に前記半導体チップをボンディングするボンディングツールと、
を有する。本発明によれば、基板を載置するボンディングステージの基板載置面に基板を基板上面側から押し付けるように圧搾空気を吹き付けることにより、基板載置面に基板を基板下面側から吸着することが容易になるので、基板の反り、浮きが低減され、基板が平坦な状態で電子部品同士の圧着が確実に行うことができる。したがって、電気的な接合の信頼性を高めることができる半導体装置の製造装置を提供することができる。
図4及び図5に示す例では、半導体装置の製造装置は、ブロワ38を有する。ブロワ38は、複数の噴出口40が設けられている。複数の噴出口40は、レール34と交差するように2列に配置されている。複数の噴出口40は、2列に配置された内側を向くように設けられている。ブロワ38は、複数の噴出口40により、圧搾空気24を基板4上面側の広い範囲に吹き付ける。その他の構成については、上記参考の形態で説明した内容を適用することができる。図4に示す半導体装置の製造方法には、上記参考の形態で説明した事項を適用することができる。ただし、ブロワ38により基板4上面側に圧搾空気を吹き付けることにより基板4上面側を高圧空間にする。
Claims (2)
- 2列に配置されたブロワと、前記ブロワの各々に設けられ、前記2列の内側を向くように設けられた複数の噴出口と、前記2列に配置された前記ブロワの間に存在するボンディングステージと、を有する半導体装置の製造装置を用意すること、
前記ボンディングステージ上に基板を載置すること、
前記複数の噴出口から、前記基板上面側に圧搾空気を吹き付けることにより、前記ボンディングステージに前記基板を押し付けること、
前記基板下面側から空気を排出することにより、前記ボンディングステージに前記基板を吸着させること、及び、
前記基板に半導体チップをフェースダウンボンディングすること、
を含む半導体装置の製造方法。 - 半導体チップを実装すべき基板を載置し、前記基板下面側の空気を排出する空気排出口を備えているボンディングステージと、
前記ボンディングステージに前記基板を前記基板上面側から押し付けるように圧搾空気を吹き付ける、2列に配置されたブロワと、
前記ブロワの各々に設けられ、前記2列の内側を向くように設けられた複数の噴出口と、
前記基板に前記半導体チップをフェースダウンボンディングするボンディングツールと、
を有し、
前記ボンディングステージは、前記2列に配置された前記ブロワの間に存在する半導体装置の製造装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004267227A JP3812677B2 (ja) | 2004-09-14 | 2004-09-14 | 半導体装置の製造装置及び半導体装置の製造方法 |
US11/212,355 US20060057780A1 (en) | 2004-09-14 | 2005-08-26 | Manufacturing apparatus of semiconductor devices, and method of manufacturing semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004267227A JP3812677B2 (ja) | 2004-09-14 | 2004-09-14 | 半導体装置の製造装置及び半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006086214A JP2006086214A (ja) | 2006-03-30 |
JP3812677B2 true JP3812677B2 (ja) | 2006-08-23 |
Family
ID=36034580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004267227A Expired - Fee Related JP3812677B2 (ja) | 2004-09-14 | 2004-09-14 | 半導体装置の製造装置及び半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20060057780A1 (ja) |
JP (1) | JP3812677B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4009872B2 (ja) | 2006-03-07 | 2007-11-21 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP4332749B2 (ja) | 2006-08-01 | 2009-09-16 | セイコーエプソン株式会社 | 電子デバイスの製造方法及び支持部材 |
JP5554671B2 (ja) * | 2010-09-24 | 2014-07-23 | 株式会社日立ハイテクインスツルメンツ | ダイボンディング装置及びボンディング方法 |
KR102231293B1 (ko) | 2014-02-10 | 2021-03-23 | 삼성전자주식회사 | 다이 본딩 장치 |
TWI669794B (zh) * | 2018-09-27 | 2019-08-21 | 頎邦科技股份有限公司 | 基板與晶片之壓合步驟及其壓合裝置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2757738B2 (ja) * | 1992-12-25 | 1998-05-25 | ヤマハ株式会社 | 回路部品の着脱装置および回路部品の着脱方法 |
US5985064A (en) * | 1996-11-28 | 1999-11-16 | Matsushita Electric Industrial Co., Ltd. | Chip compression-bonding apparatus and method |
KR100283744B1 (ko) * | 1997-08-01 | 2001-04-02 | 윤종용 | 집적회로실장방법 |
JP3347295B2 (ja) * | 1998-09-09 | 2002-11-20 | 松下電器産業株式会社 | 部品実装ツールとそれによる部品実装方法および装置 |
JP2965981B1 (ja) * | 1998-09-30 | 1999-10-18 | モトローラ株式会社 | フリップチップボンディングの最適化条件検出方法 |
JP3180800B2 (ja) * | 1999-04-08 | 2001-06-25 | カシオ計算機株式会社 | 半導体装置及びその製造方法 |
JP3402267B2 (ja) * | 1999-06-23 | 2003-05-06 | ソニーケミカル株式会社 | 電子素子の実装方法 |
JP2001034187A (ja) * | 1999-07-22 | 2001-02-09 | Nec Corp | 熱圧着装置および熱圧着方法 |
JP3768761B2 (ja) * | 2000-01-31 | 2006-04-19 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
JP4176292B2 (ja) * | 2000-07-27 | 2008-11-05 | 株式会社新川 | シングルポイントボンディング装置 |
JP4592885B2 (ja) * | 2000-07-31 | 2010-12-08 | 富士通セミコンダクター株式会社 | 半導体基板試験装置 |
JP4663184B2 (ja) * | 2001-09-26 | 2011-03-30 | パナソニック株式会社 | 半導体装置の製造方法 |
US7176055B2 (en) * | 2001-11-02 | 2007-02-13 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for manufacturing electronic component-mounted component, and electronic component-mounted component |
JP4206320B2 (ja) * | 2003-09-19 | 2009-01-07 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
-
2004
- 2004-09-14 JP JP2004267227A patent/JP3812677B2/ja not_active Expired - Fee Related
-
2005
- 2005-08-26 US US11/212,355 patent/US20060057780A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20060057780A1 (en) | 2006-03-16 |
JP2006086214A (ja) | 2006-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6919642B2 (en) | Method for bonding IC chips to substrates incorporating dummy bumps and non-conductive adhesive and structures formed | |
JP7092031B2 (ja) | 配線基板の製造方法 | |
KR100985084B1 (ko) | 반도체 장치의 제조 방법 | |
US20110020983A1 (en) | Flip-chip mounting method, flip-chip mounting apparatus and tool protection sheet used in flip-chip mounting apparatus | |
WO2010070806A1 (ja) | 半導体装置とフリップチップ実装方法およびフリップチップ実装装置 | |
JP2009141269A (ja) | 電気部品の実装方法及び実装装置 | |
JP4097378B2 (ja) | 電子部品の実装方法及びその装置 | |
JP3871634B2 (ja) | Cof半導体装置の製造方法 | |
JP2001093938A (ja) | 半導体装置及びその製造方法 | |
JP3812677B2 (ja) | 半導体装置の製造装置及び半導体装置の製造方法 | |
JP2009141267A (ja) | 電気部品の実装方法及び実装装置 | |
JP2000286298A (ja) | 電子部品の実装方法及びその装置 | |
JP4946056B2 (ja) | 積層型モジュールおよびその製造方法 | |
JP2014063921A (ja) | 半導体装置及びその製造方法並びに電子装置及びその製造方法 | |
JP4977194B2 (ja) | 電子部品の実装方法 | |
JP2010153670A (ja) | フリップチップ実装方法と半導体装置 | |
JP2009032845A (ja) | 熱圧着装置及び電気部品の実装方法 | |
JP5098939B2 (ja) | ボンディング装置及びボンディング方法 | |
JP2007049100A (ja) | 貼着装置、膜の貼着方法、半導体装置及び表示装置 | |
JP2008147367A (ja) | 半導体装置及びその製造方法 | |
JP2020150117A (ja) | 電子装置、および電子装置の製造方法 | |
JP2011187699A (ja) | 半導体装置およびその製造方法 | |
JP4459258B2 (ja) | 電子部品の実装方法 | |
JP4214127B2 (ja) | フリップチップ実装方法 | |
JP2008270324A (ja) | 電子部品内蔵基板とこれを用いた電子機器、およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20051221 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060123 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060215 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060404 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20060510 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20060523 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100609 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110609 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110609 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120609 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130609 Year of fee payment: 7 |
|
LAPS | Cancellation because of no payment of annual fees |