JP3793669B2 - 巨大磁気抵抗効果ヘッド、薄膜磁気ヘッドならびに磁気記録再生装置 - Google Patents
巨大磁気抵抗効果ヘッド、薄膜磁気ヘッドならびに磁気記録再生装置 Download PDFInfo
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- JP3793669B2 JP3793669B2 JP23916999A JP23916999A JP3793669B2 JP 3793669 B2 JP3793669 B2 JP 3793669B2 JP 23916999 A JP23916999 A JP 23916999A JP 23916999 A JP23916999 A JP 23916999A JP 3793669 B2 JP3793669 B2 JP 3793669B2
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- 230000005291 magnetic effect Effects 0.000 title claims description 139
- 239000010409 thin film Substances 0.000 title claims description 11
- 239000010408 film Substances 0.000 claims description 208
- 230000005294 ferromagnetic effect Effects 0.000 claims description 191
- 239000002131 composite material Substances 0.000 claims description 114
- 238000010030 laminating Methods 0.000 claims description 21
- 230000000694 effects Effects 0.000 claims description 20
- 230000001939 inductive effect Effects 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000005415 magnetization Effects 0.000 description 24
- 230000005290 antiferromagnetic effect Effects 0.000 description 23
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 13
- 230000009977 dual effect Effects 0.000 description 10
- 229910019222 CoCrPt Inorganic materials 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 230000003068 static effect Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 4
- 229910003321 CoFe Inorganic materials 0.000 description 3
- 229910019041 PtMn Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001803 electron scattering Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005293 ferrimagnetic effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
- G11B5/09—Digital recording
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3945—Heads comprising more than one sensitive element
- G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
- G11B5/3951—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes
- G11B5/3954—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes the active elements transducing on a single track
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/40—Protective measures on heads, e.g. against excessive temperature
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23916999A JP3793669B2 (ja) | 1999-08-26 | 1999-08-26 | 巨大磁気抵抗効果ヘッド、薄膜磁気ヘッドならびに磁気記録再生装置 |
| US09/642,003 US6243288B1 (en) | 1999-08-26 | 2000-08-21 | Giant magnetoresistive sensor, thin-film read/write head and magnetic recording apparatus using the sensor |
| US09/866,851 US6396734B2 (en) | 1999-08-26 | 2001-05-30 | Giant magnetoresistive sensor, thin-film read/write head and magnetic recording apparatus using the sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23916999A JP3793669B2 (ja) | 1999-08-26 | 1999-08-26 | 巨大磁気抵抗効果ヘッド、薄膜磁気ヘッドならびに磁気記録再生装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001067621A JP2001067621A (ja) | 2001-03-16 |
| JP2001067621A5 JP2001067621A5 (enExample) | 2004-10-14 |
| JP3793669B2 true JP3793669B2 (ja) | 2006-07-05 |
Family
ID=17040765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23916999A Expired - Fee Related JP3793669B2 (ja) | 1999-08-26 | 1999-08-26 | 巨大磁気抵抗効果ヘッド、薄膜磁気ヘッドならびに磁気記録再生装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US6243288B1 (enExample) |
| JP (1) | JP3793669B2 (enExample) |
Families Citing this family (117)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4054142B2 (ja) * | 1999-09-28 | 2008-02-27 | 富士通株式会社 | スピンバルブ型磁気抵抗効果型素子 |
| US20050167657A1 (en) * | 2000-03-09 | 2005-08-04 | Nickel Janice H. | Multi-bit magnetic memory cells |
| US6731473B2 (en) * | 2000-04-12 | 2004-05-04 | Seagate Technology Llc | Dual pseudo spin valve heads |
| JP3550533B2 (ja) * | 2000-07-06 | 2004-08-04 | 株式会社日立製作所 | 磁界センサー、磁気ヘッド、磁気記録再生装置及び磁気記憶素子 |
| US6603713B1 (en) | 2000-07-28 | 2003-08-05 | Terastor Corporation | Optical disk drives with thermomagnetic writing and magnetoresistive reading |
| JP2002124719A (ja) * | 2000-08-04 | 2002-04-26 | Tdk Corp | 磁気抵抗効果装置およびその製造方法ならびに薄膜磁気ヘッドおよびその製造方法 |
| JP3260741B1 (ja) * | 2000-08-04 | 2002-02-25 | ティーディーケイ株式会社 | 磁気抵抗効果装置およびその製造方法ならびに薄膜磁気ヘッドおよびその製造方法 |
| US6721131B2 (en) | 2001-03-15 | 2004-04-13 | Seagate Technology Llc | Composite write pole for a magnetic recording head |
| US7289303B1 (en) * | 2001-04-05 | 2007-10-30 | Western Digital (Fremont), Llc | Spin valve sensors having synthetic antiferromagnet for longitudinal bias |
| US6744086B2 (en) | 2001-05-15 | 2004-06-01 | Nve Corporation | Current switched magnetoresistive memory cell |
| US6667682B2 (en) | 2001-12-26 | 2003-12-23 | Honeywell International Inc. | System and method for using magneto-resistive sensors as dual purpose sensors |
| US6865062B2 (en) | 2002-03-21 | 2005-03-08 | International Business Machines Corporation | Spin valve sensor with exchange biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer |
| US6785102B2 (en) * | 2002-04-18 | 2004-08-31 | Hitachi Global Storage Technologies Netherlands B.V. | Spin valve sensor with dual self-pinned AP pinned layer structures |
| US6813115B2 (en) * | 2002-04-18 | 2004-11-02 | Seagate Technology Llc | Perpendicular magnetic recording head with improved write field gradient |
| US6801412B2 (en) | 2002-04-19 | 2004-10-05 | International Business Machines Corporation | Method and apparatus for improved pinning strength for self-pinned giant magnetoresistive heads |
| US6927073B2 (en) * | 2002-05-16 | 2005-08-09 | Nova Research, Inc. | Methods of fabricating magnetoresistive memory devices |
| US6680828B2 (en) * | 2002-06-07 | 2004-01-20 | International Business Machines Corporation | Differential GMR head system and method using self-pinned layer |
| US6713800B2 (en) * | 2002-06-27 | 2004-03-30 | Seagate Technology Llc | Magnetoresistive sensor with reduced side-reading effect |
| US6781798B2 (en) * | 2002-07-15 | 2004-08-24 | International Business Machines Corporation | CPP sensor with dual self-pinned AP pinned layer structures |
| US6888742B1 (en) * | 2002-08-28 | 2005-05-03 | Grandis, Inc. | Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element |
| US7016163B2 (en) * | 2003-02-20 | 2006-03-21 | Honeywell International Inc. | Magnetic field sensor |
| JP4419408B2 (ja) * | 2003-03-14 | 2010-02-24 | Tdk株式会社 | 磁気抵抗効果素子および磁気メモリデバイス |
| US7916435B1 (en) | 2003-05-02 | 2011-03-29 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic tunnel transistor having a base structure that provides polarization of unpolarized electrons from an emitter based upon a magnetic orientation of a free layer and a self-pinned layer |
| US7230804B2 (en) * | 2003-05-02 | 2007-06-12 | Hitachi Global Storage Technologies Netherlands B.V. | Method and apparatus for providing a magnetic tunnel transistor with a self-pinned emitter |
| US7064935B2 (en) * | 2003-06-17 | 2006-06-20 | Hitachi Global Storage Technologies Netherland B.V. | Magnetoresistive sensor having leads with vertical end walls |
| US7019950B2 (en) * | 2003-06-17 | 2006-03-28 | Hitachi Global Storage Technologies, Netherlands, B.V. | Magnetoresistive sensor having bias magnets with steep endwalls |
| US6989975B2 (en) * | 2003-06-18 | 2006-01-24 | Hewlett-Packard Development Company, L.P. | Magnetoresistive device including pinned structure with a layer that provides texture for pinning |
| US7092220B2 (en) * | 2003-07-29 | 2006-08-15 | Hitachi Global Storage Technologies | Apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having a first self-pinned layer extending under the hard bias layers |
| US8755222B2 (en) | 2003-08-19 | 2014-06-17 | New York University | Bipolar spin-transfer switching |
| US7573737B2 (en) * | 2003-08-19 | 2009-08-11 | New York University | High speed low power magnetic devices based on current induced spin-momentum transfer |
| US7911832B2 (en) * | 2003-08-19 | 2011-03-22 | New York University | High speed low power magnetic devices based on current induced spin-momentum transfer |
| US7119997B2 (en) * | 2003-09-30 | 2006-10-10 | Hitachi Global Storage Technologies Netherlands B.V. | Spin valve sensor having an antiparallel (AP) self-pinned layer structure comprising cobalt for high magnetostriction |
| US7177122B2 (en) * | 2003-10-27 | 2007-02-13 | Seagate Technology Llc | Biasing for tri-layer magnetoresistive sensors |
| US7151653B2 (en) * | 2004-02-18 | 2006-12-19 | Hitachi Global Technologies Netherlands B.V. | Depositing a pinned layer structure in a self-pinned spin valve |
| US7463459B2 (en) | 2004-02-18 | 2008-12-09 | Hitachi Global Storage Technologies Netherlands B.V. | Self-pinned read sensor design with enhanced lead stabilizing mechanism |
| US7268986B2 (en) * | 2004-03-31 | 2007-09-11 | Hitachi Global Storage Technologies Netherlands B.V. | Double tunnel junction using self-pinned center ferromagnet |
| US7538988B2 (en) * | 2004-09-30 | 2009-05-26 | Hitachi Global Storage Technologies Netherlands B.V. | Method and apparatus having improved magnetic read head sensors |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
| JP3022023B2 (ja) | 1992-04-13 | 2000-03-15 | 株式会社日立製作所 | 磁気記録再生装置 |
| US5465185A (en) | 1993-10-15 | 1995-11-07 | International Business Machines Corporation | Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor |
| JP3624355B2 (ja) | 1994-02-07 | 2005-03-02 | 富士通株式会社 | 磁気抵抗センサ |
| US5583725A (en) | 1994-06-15 | 1996-12-10 | International Business Machines Corporation | Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor |
| US5739988A (en) * | 1996-09-18 | 1998-04-14 | International Business Machines Corporation | Spin valve sensor with enhanced magnetoresistance |
| JP3291208B2 (ja) * | 1996-10-07 | 2002-06-10 | アルプス電気株式会社 | 磁気抵抗効果型センサおよびその製造方法とそのセンサを備えた磁気ヘッド |
| US5768069A (en) * | 1996-11-27 | 1998-06-16 | International Business Machines Corporation | Self-biased dual spin valve sensor |
| US5883764A (en) * | 1997-10-03 | 1999-03-16 | International Business Machines Corporation | Magnetoresistive sensor having multi-layered refractory metal conductor leads |
| US5920446A (en) * | 1998-01-06 | 1999-07-06 | International Business Machines Corporation | Ultra high density GMR sensor |
| US6219209B1 (en) * | 1999-07-29 | 2001-04-17 | International Business Machines Corporation | Spin valve head with multiple antiparallel coupling layers |
-
1999
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| JP2001067621A (ja) | 2001-03-16 |
| US20010030887A1 (en) | 2001-10-18 |
| US6396734B2 (en) | 2002-05-28 |
| US6243288B1 (en) | 2001-06-05 |
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