JP3771987B2 - 窒化ガリウム系化合物半導体の製造方法 - Google Patents

窒化ガリウム系化合物半導体の製造方法 Download PDF

Info

Publication number
JP3771987B2
JP3771987B2 JP4319597A JP4319597A JP3771987B2 JP 3771987 B2 JP3771987 B2 JP 3771987B2 JP 4319597 A JP4319597 A JP 4319597A JP 4319597 A JP4319597 A JP 4319597A JP 3771987 B2 JP3771987 B2 JP 3771987B2
Authority
JP
Japan
Prior art keywords
gallium nitride
semiconductor layer
producing
infrared ray
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP4319597A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10242061A (ja
JPH10242061A5 (enExample
Inventor
淳 小河
貴之 湯浅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4319597A priority Critical patent/JP3771987B2/ja
Publication of JPH10242061A publication Critical patent/JPH10242061A/ja
Publication of JPH10242061A5 publication Critical patent/JPH10242061A5/ja
Application granted granted Critical
Publication of JP3771987B2 publication Critical patent/JP3771987B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP4319597A 1997-02-27 1997-02-27 窒化ガリウム系化合物半導体の製造方法 Expired - Fee Related JP3771987B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4319597A JP3771987B2 (ja) 1997-02-27 1997-02-27 窒化ガリウム系化合物半導体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4319597A JP3771987B2 (ja) 1997-02-27 1997-02-27 窒化ガリウム系化合物半導体の製造方法

Publications (3)

Publication Number Publication Date
JPH10242061A JPH10242061A (ja) 1998-09-11
JPH10242061A5 JPH10242061A5 (enExample) 2005-01-27
JP3771987B2 true JP3771987B2 (ja) 2006-05-10

Family

ID=12657152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4319597A Expired - Fee Related JP3771987B2 (ja) 1997-02-27 1997-02-27 窒化ガリウム系化合物半導体の製造方法

Country Status (1)

Country Link
JP (1) JP3771987B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10541352B2 (en) 2016-10-28 2020-01-21 Lumileds Llc Methods for growing light emitting devices under ultra-violet illumination

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1333478A1 (en) * 2002-01-23 2003-08-06 Shiro Sakai Method for manufacturing gallium nitride compound semiconductor element and gallium nitride compound semiconductor element
KR100916489B1 (ko) 2007-07-27 2009-09-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100921143B1 (ko) * 2008-12-18 2009-10-12 엘지이노텍 주식회사 반도체 발광소자
CN111690908B (zh) * 2020-06-22 2022-03-18 广东石油化工学院 一种大面积二维氮化镓薄膜及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10541352B2 (en) 2016-10-28 2020-01-21 Lumileds Llc Methods for growing light emitting devices under ultra-violet illumination
US11069836B2 (en) 2016-10-28 2021-07-20 Lumileds Llc Methods for growing light emitting devices under ultra-violet illumination

Also Published As

Publication number Publication date
JPH10242061A (ja) 1998-09-11

Similar Documents

Publication Publication Date Title
US5432808A (en) Compound semicondutor light-emitting device
US6852161B2 (en) Method of fabricating group-iii nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device
JP3349931B2 (ja) 半導体レーザ装置の製造方法
US5926726A (en) In-situ acceptor activation in group III-v nitride compound semiconductors
JP3656606B2 (ja) Ｉｉｉ族窒化物半導体結晶の製造方法
JP3408413B2 (ja) 半導体の製造方法及び半導体装置
KR100806262B1 (ko) 3족 질화물 ｐ형 반도체의 제조방법, 및 3족 질화물 반도체발광 소자
JP3233139B2 (ja) 窒化物半導体発光素子及びその製造方法
JP3603598B2 (ja) ３−５族化合物半導体の製造方法
JP3561105B2 (ja) ｐ型半導体膜および半導体素子
JP2919788B2 (ja) 半導体装置、半導体装置の製造方法、及び窒化ガリウム系半導体の成長方法
JP5947183B2 (ja) ｐ型化合物半導体層の形成方法
JP3322179B2 (ja) 窒化ガリウム系半導体発光素子
JP3771987B2 (ja) 窒化ガリウム系化合物半導体の製造方法
JP3442935B2 (ja) 気相成長用基板及びその加熱方法
JP3497790B2 (ja) Ｐ型窒化ガリウム系半導体の製造方法及びｐ型窒化ガリウム系半導体を用いた発光素子
JPH09167857A (ja) 半導体素子及びその製造方法
JPH0797300A (ja) 窒化ガリウム系結晶の熱処理方法
JP3288300B2 (ja) 半導体の製造方法
JP4222287B2 (ja) Ｉｉｉ族窒化物半導体結晶の製造方法
JP3077781B2 (ja) 窒化インジウムガリウムの成長方法
JP3671532B2 (ja) 半導体発光素子の製造方法
JP3663722B2 (ja) 化合物半導体成長層及びその製造方法
JP2004146525A (ja) ｐ型ＧａＮ系化合物半導体の製造方法
JP4009043B2 (ja) ｐ型ＩＩＩ族窒化物半導体の製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040225

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040225

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040921

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040928

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041126

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20041126

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20051108

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060106

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060207

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060213

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100217

Year of fee payment: 4

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100217

Year of fee payment: 4

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110217

Year of fee payment: 5

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120217

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120217

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130217

Year of fee payment: 7

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130217

Year of fee payment: 7

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140217

Year of fee payment: 8

LAPS Cancellation because of no payment of annual fees