JPH10242061A5 - - Google Patents

Info

Publication number
JPH10242061A5
JPH10242061A5 JP1997043195A JP4319597A JPH10242061A5 JP H10242061 A5 JPH10242061 A5 JP H10242061A5 JP 1997043195 A JP1997043195 A JP 1997043195A JP 4319597 A JP4319597 A JP 4319597A JP H10242061 A5 JPH10242061 A5 JP H10242061A5
Authority
JP
Japan
Prior art keywords
gallium nitride
producing
semiconductor layer
compound semiconductor
based semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997043195A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10242061A (ja
JP3771987B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP4319597A priority Critical patent/JP3771987B2/ja
Priority claimed from JP4319597A external-priority patent/JP3771987B2/ja
Publication of JPH10242061A publication Critical patent/JPH10242061A/ja
Publication of JPH10242061A5 publication Critical patent/JPH10242061A5/ja
Application granted granted Critical
Publication of JP3771987B2 publication Critical patent/JP3771987B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP4319597A 1997-02-27 1997-02-27 窒化ガリウム系化合物半導体の製造方法 Expired - Fee Related JP3771987B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4319597A JP3771987B2 (ja) 1997-02-27 1997-02-27 窒化ガリウム系化合物半導体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4319597A JP3771987B2 (ja) 1997-02-27 1997-02-27 窒化ガリウム系化合物半導体の製造方法

Publications (3)

Publication Number Publication Date
JPH10242061A JPH10242061A (ja) 1998-09-11
JPH10242061A5 true JPH10242061A5 (enExample) 2005-01-27
JP3771987B2 JP3771987B2 (ja) 2006-05-10

Family

ID=12657152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4319597A Expired - Fee Related JP3771987B2 (ja) 1997-02-27 1997-02-27 窒化ガリウム系化合物半導体の製造方法

Country Status (1)

Country Link
JP (1) JP3771987B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1333478A1 (en) * 2002-01-23 2003-08-06 Shiro Sakai Method for manufacturing gallium nitride compound semiconductor element and gallium nitride compound semiconductor element
KR100916489B1 (ko) 2007-07-27 2009-09-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100921143B1 (ko) * 2008-12-18 2009-10-12 엘지이노텍 주식회사 반도체 발광소자
US10541352B2 (en) 2016-10-28 2020-01-21 Lumileds Llc Methods for growing light emitting devices under ultra-violet illumination
CN111690908B (zh) * 2020-06-22 2022-03-18 广东石油化工学院 一种大面积二维氮化镓薄膜及其制备方法

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