JP3738837B2 - 交互ストライプ電極およびその製造方法 - Google Patents

交互ストライプ電極およびその製造方法 Download PDF

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Publication number
JP3738837B2
JP3738837B2 JP2002017941A JP2002017941A JP3738837B2 JP 3738837 B2 JP3738837 B2 JP 3738837B2 JP 2002017941 A JP2002017941 A JP 2002017941A JP 2002017941 A JP2002017941 A JP 2002017941A JP 3738837 B2 JP3738837 B2 JP 3738837B2
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JP
Japan
Prior art keywords
stripe electrode
transparent conductive
conductive film
electrode
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002017941A
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English (en)
Japanese (ja)
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JP2003005377A5 (enExample
JP2003005377A (ja
Inventor
真二 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP2002017941A priority Critical patent/JP3738837B2/ja
Priority to US10/122,186 priority patent/US6831291B2/en
Publication of JP2003005377A publication Critical patent/JP2003005377A/ja
Publication of JP2003005377A5 publication Critical patent/JP2003005377A5/ja
Application granted granted Critical
Publication of JP3738837B2 publication Critical patent/JP3738837B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Liquid Crystal (AREA)
JP2002017941A 2001-04-16 2002-01-28 交互ストライプ電極およびその製造方法 Expired - Fee Related JP3738837B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002017941A JP3738837B2 (ja) 2001-04-16 2002-01-28 交互ストライプ電極およびその製造方法
US10/122,186 US6831291B2 (en) 2001-04-16 2002-04-16 Process for producing alternate striped electrode array in which transparent electrodes alternate with opaque electrodes, based on single mask designed for the opaque electrodes in self-aligned manner

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-116906 2001-04-16
JP2001116906 2001-04-16
JP2002017941A JP3738837B2 (ja) 2001-04-16 2002-01-28 交互ストライプ電極およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005269575A Division JP2006093702A (ja) 2001-04-16 2005-09-16 交互ストライプ電極および画像検出器

Publications (3)

Publication Number Publication Date
JP2003005377A JP2003005377A (ja) 2003-01-08
JP2003005377A5 JP2003005377A5 (enExample) 2005-02-17
JP3738837B2 true JP3738837B2 (ja) 2006-01-25

Family

ID=26613640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002017941A Expired - Fee Related JP3738837B2 (ja) 2001-04-16 2002-01-28 交互ストライプ電極およびその製造方法

Country Status (2)

Country Link
US (1) US6831291B2 (enExample)
JP (1) JP3738837B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6933191B2 (en) * 2003-09-18 2005-08-23 International Business Machines Corporation Two-mask process for metal-insulator-metal capacitors and single mask process for thin film resistors
JP2006005057A (ja) * 2004-06-16 2006-01-05 Fuji Photo Film Co Ltd 放射線画像記録媒体および画像表示媒体
JP2006100548A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 放射線固体検出器
JP2006210438A (ja) * 2005-01-25 2006-08-10 Nec Electronics Corp 半導体装置およびその製造方法
JP2010027743A (ja) * 2008-07-16 2010-02-04 Ebara Corp インプリント用ガラス基板、レジストパターン形成方法、インプリント用ガラス基板の検査方法及び検査装置
TWI414170B (zh) * 2009-04-29 2013-11-01 Unique Instr Co Ltd A device with a 2D and 3D image display function mobile phone
JP5748350B2 (ja) * 2011-09-05 2015-07-15 富士フイルム株式会社 透明導電フィルム、その製造方法、フレキシブル有機電子デバイス、及び、有機薄膜太陽電池

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56117470A (en) * 1980-02-20 1981-09-14 Canon Inc Signal detecting method
DE3236137A1 (de) * 1982-09-29 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Bildaufnahmeeinrichtung
JPS61231754A (ja) * 1985-04-08 1986-10-16 Nec Corp 混成集積化一次元光センサ
US5187601A (en) * 1988-03-07 1993-02-16 Semiconductor Energy Laboratory Co., Ltd. Method for making a high contrast liquid crystal display including laser scribing opaque and transparent conductive strips simultaneously
JPH0961834A (ja) * 1995-08-21 1997-03-07 Toshiba Corp 液晶表示素子及びその製造方法
JP4040201B2 (ja) 1999-03-30 2008-01-30 富士フイルム株式会社 放射線固体検出器、並びにそれを用いた放射線画像記録／読取方法および装置
US20020110673A1 (en) * 2001-02-14 2002-08-15 Ramin Heydarpour Multilayered electrode/substrate structures and display devices incorporating the same

Also Published As

Publication number Publication date
JP2003005377A (ja) 2003-01-08
US6831291B2 (en) 2004-12-14
US20020148989A1 (en) 2002-10-17

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