JP3737240B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

Info

Publication number
JP3737240B2
JP3737240B2 JP10687797A JP10687797A JP3737240B2 JP 3737240 B2 JP3737240 B2 JP 3737240B2 JP 10687797 A JP10687797 A JP 10687797A JP 10687797 A JP10687797 A JP 10687797A JP 3737240 B2 JP3737240 B2 JP 3737240B2
Authority
JP
Japan
Prior art keywords
transistor
low
power supply
nmos transistor
pmos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP10687797A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10303370A (ja
JPH10303370A5 (https=
Inventor
美寿 齋藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10687797A priority Critical patent/JP3737240B2/ja
Publication of JPH10303370A publication Critical patent/JPH10303370A/ja
Publication of JPH10303370A5 publication Critical patent/JPH10303370A5/ja
Application granted granted Critical
Publication of JP3737240B2 publication Critical patent/JP3737240B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP10687797A 1997-04-24 1997-04-24 半導体集積回路装置 Expired - Fee Related JP3737240B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10687797A JP3737240B2 (ja) 1997-04-24 1997-04-24 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10687797A JP3737240B2 (ja) 1997-04-24 1997-04-24 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JPH10303370A JPH10303370A (ja) 1998-11-13
JPH10303370A5 JPH10303370A5 (https=) 2005-03-17
JP3737240B2 true JP3737240B2 (ja) 2006-01-18

Family

ID=14444761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10687797A Expired - Fee Related JP3737240B2 (ja) 1997-04-24 1997-04-24 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JP3737240B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001127611A (ja) 1999-10-27 2001-05-11 Univ Tokyo 半導体集積回路
JP3566608B2 (ja) 1999-12-28 2004-09-15 Ｎｅｃエレクトロニクス株式会社 半導体集積回路
TW501278B (en) * 2000-06-12 2002-09-01 Intel Corp Apparatus and circuit having reduced leakage current and method therefor
CN100590877C (zh) * 2002-09-10 2010-02-17 日本电气株式会社 薄膜半导体装置及其制造方法
US7248090B2 (en) * 2005-01-10 2007-07-24 Qualcomm, Incorporated Multi-threshold MOS circuits
JP4261507B2 (ja) 2005-03-31 2009-04-30 富士通マイクロエレクトロニクス株式会社 クロックネットワークの消費電力低減回路
JP2009302194A (ja) 2008-06-11 2009-12-24 Sony Corp 電源遮断トランジスタを有する半導体装置
JP4607256B2 (ja) 2008-12-18 2011-01-05 パナソニック株式会社 不揮発性記憶装置及びその書き込み方法
CN109449156B (zh) * 2018-12-20 2024-03-22 上海艾为电子技术股份有限公司 一种端口静电释放保护电路

Also Published As

Publication number Publication date
JPH10303370A (ja) 1998-11-13

Similar Documents

Publication Publication Date Title
JP3947308B2 (ja) 半導体集積回路
JP2616142B2 (ja) 出力回路
US5973552A (en) Power savings technique in solid state integrated circuits
US5027008A (en) CMOS clamp circuits
US20040021501A1 (en) Low-leakage integrated circuits and dynamic logic circuits
JPH10261946A (ja) 半導体集積回路
JPH08251014A (ja) ダイナミック論理回路を有する装置及びその装置の製造方法並びに信号の処理方法
JP2004343396A (ja) レベルシフト回路
US6297670B1 (en) Single-ended sense amplifier with adjustable noise margin and power down control
JPH08223026A (ja) アウトプット信号レベルを改善した低電力型スタティック・ロジック回路を含む装置及び同装置の製造方法、並びにロジック信号の処理方法
JP3737240B2 (ja) 半導体集積回路装置
JP3686174B2 (ja) 半導体集積回路装置
JPH10107610A (ja) 半導体集積回路
US6340907B2 (en) Schmitt trigger circuit having independent threshold voltage setting to provide hysteresis
JP3831270B2 (ja) 論理回路及び半導体集積回路
US20030197530A1 (en) Semiconductor logical operation circuit
JP3565067B2 (ja) Ｃｍｏｓロジック用電源回路
JP3935266B2 (ja) 電圧検知回路
JP2001053599A (ja) 半導体集積回路
JP2004289107A (ja) 半導体集積回路装置
JP3173489B2 (ja) 半導体集積回路
JPH10187270A (ja) 半導体集積回路装置
JPS6218993B2 (https=)
JPH07161190A (ja) 半導体集積回路
JP3485314B2 (ja) 放電制御回路

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040419

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040419

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050131

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050329

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050530

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20051025

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20051026

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081104

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091104

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101104

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101104

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111104

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111104

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121104

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121104

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131104

Year of fee payment: 8

LAPS Cancellation because of no payment of annual fees