JP3726906B2 - 半導体装置及びその製造方法、回路基板並びに電子機器 - Google Patents

半導体装置及びその製造方法、回路基板並びに電子機器 Download PDF

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Publication number
JP3726906B2
JP3726906B2 JP2003073925A JP2003073925A JP3726906B2 JP 3726906 B2 JP3726906 B2 JP 3726906B2 JP 2003073925 A JP2003073925 A JP 2003073925A JP 2003073925 A JP2003073925 A JP 2003073925A JP 3726906 B2 JP3726906 B2 JP 3726906B2
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JP
Japan
Prior art keywords
electrode
resin layer
semiconductor device
semiconductor substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003073925A
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English (en)
Japanese (ja)
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JP2004281896A (ja
JP2004281896A5 (enExample
Inventor
輝直 花岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2003073925A priority Critical patent/JP3726906B2/ja
Priority to US10/802,668 priority patent/US7057282B2/en
Publication of JP2004281896A publication Critical patent/JP2004281896A/ja
Publication of JP2004281896A5 publication Critical patent/JP2004281896A5/ja
Application granted granted Critical
Publication of JP3726906B2 publication Critical patent/JP3726906B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2003073925A 2003-03-18 2003-03-18 半導体装置及びその製造方法、回路基板並びに電子機器 Expired - Fee Related JP3726906B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003073925A JP3726906B2 (ja) 2003-03-18 2003-03-18 半導体装置及びその製造方法、回路基板並びに電子機器
US10/802,668 US7057282B2 (en) 2003-03-18 2004-03-17 Semiconductor device and method for manufacturing the same, circuit board and electronic equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003073925A JP3726906B2 (ja) 2003-03-18 2003-03-18 半導体装置及びその製造方法、回路基板並びに電子機器

Publications (3)

Publication Number Publication Date
JP2004281896A JP2004281896A (ja) 2004-10-07
JP2004281896A5 JP2004281896A5 (enExample) 2005-08-25
JP3726906B2 true JP3726906B2 (ja) 2005-12-14

Family

ID=33289703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003073925A Expired - Fee Related JP3726906B2 (ja) 2003-03-18 2003-03-18 半導体装置及びその製造方法、回路基板並びに電子機器

Country Status (2)

Country Link
US (1) US7057282B2 (enExample)
JP (1) JP3726906B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007115958A (ja) * 2005-10-21 2007-05-10 Seiko Epson Corp 半導体装置
JP2007115957A (ja) 2005-10-21 2007-05-10 Seiko Epson Corp 半導体装置及びその製造方法
US10483132B2 (en) * 2012-12-28 2019-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Post-passivation interconnect structure and method of forming the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2730492B2 (ja) 1994-10-25 1998-03-25 日本電気株式会社 半導体装置
JP3618212B2 (ja) 1998-01-08 2005-02-09 松下電器産業株式会社 半導体装置及びその製造方法
JPH11224885A (ja) 1998-02-06 1999-08-17 Matsushita Electron Corp 半導体装置
US6396145B1 (en) * 1998-06-12 2002-05-28 Hitachi, Ltd. Semiconductor device and method for manufacturing the same technical field
KR100411679B1 (ko) 1999-03-16 2003-12-18 세이코 엡슨 가부시키가이샤 반도체 장치 및 그 제조 방법, 회로 기판 및 전자기기
JP3729680B2 (ja) 1999-06-03 2005-12-21 株式会社ルネサステクノロジ 半導体装置の製造方法および半導体装置
JP4015787B2 (ja) 1999-09-03 2007-11-28 松下電器産業株式会社 半導体装置の製造方法
JP3399456B2 (ja) 1999-10-29 2003-04-21 株式会社日立製作所 半導体装置およびその製造方法
JP3452043B2 (ja) 1999-10-29 2003-09-29 株式会社日立製作所 半導体装置およびその製造方法
WO2001071805A1 (fr) * 2000-03-23 2001-09-27 Seiko Epson Corporation Dispositif a semi-conducteur, procede de fabrication, carte de circuit, et dispositif electronique
JP2004104102A (ja) * 2002-08-21 2004-04-02 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器

Also Published As

Publication number Publication date
US20040245629A1 (en) 2004-12-09
JP2004281896A (ja) 2004-10-07
US7057282B2 (en) 2006-06-06

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