JP2004281896A5 - - Google Patents

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Publication number
JP2004281896A5
JP2004281896A5 JP2003073925A JP2003073925A JP2004281896A5 JP 2004281896 A5 JP2004281896 A5 JP 2004281896A5 JP 2003073925 A JP2003073925 A JP 2003073925A JP 2003073925 A JP2003073925 A JP 2003073925A JP 2004281896 A5 JP2004281896 A5 JP 2004281896A5
Authority
JP
Japan
Prior art keywords
electrode
semiconductor device
semiconductor substrate
resin layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003073925A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004281896A (ja
JP3726906B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003073925A priority Critical patent/JP3726906B2/ja
Priority claimed from JP2003073925A external-priority patent/JP3726906B2/ja
Priority to US10/802,668 priority patent/US7057282B2/en
Publication of JP2004281896A publication Critical patent/JP2004281896A/ja
Publication of JP2004281896A5 publication Critical patent/JP2004281896A5/ja
Application granted granted Critical
Publication of JP3726906B2 publication Critical patent/JP3726906B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003073925A 2003-03-18 2003-03-18 半導体装置及びその製造方法、回路基板並びに電子機器 Expired - Fee Related JP3726906B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003073925A JP3726906B2 (ja) 2003-03-18 2003-03-18 半導体装置及びその製造方法、回路基板並びに電子機器
US10/802,668 US7057282B2 (en) 2003-03-18 2004-03-17 Semiconductor device and method for manufacturing the same, circuit board and electronic equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003073925A JP3726906B2 (ja) 2003-03-18 2003-03-18 半導体装置及びその製造方法、回路基板並びに電子機器

Publications (3)

Publication Number Publication Date
JP2004281896A JP2004281896A (ja) 2004-10-07
JP2004281896A5 true JP2004281896A5 (enExample) 2005-08-25
JP3726906B2 JP3726906B2 (ja) 2005-12-14

Family

ID=33289703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003073925A Expired - Fee Related JP3726906B2 (ja) 2003-03-18 2003-03-18 半導体装置及びその製造方法、回路基板並びに電子機器

Country Status (2)

Country Link
US (1) US7057282B2 (enExample)
JP (1) JP3726906B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007115958A (ja) * 2005-10-21 2007-05-10 Seiko Epson Corp 半導体装置
JP2007115957A (ja) 2005-10-21 2007-05-10 Seiko Epson Corp 半導体装置及びその製造方法
US10483132B2 (en) * 2012-12-28 2019-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Post-passivation interconnect structure and method of forming the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2730492B2 (ja) 1994-10-25 1998-03-25 日本電気株式会社 半導体装置
JP3618212B2 (ja) 1998-01-08 2005-02-09 松下電器産業株式会社 半導体装置及びその製造方法
JPH11224885A (ja) 1998-02-06 1999-08-17 Matsushita Electron Corp 半導体装置
US6396145B1 (en) * 1998-06-12 2002-05-28 Hitachi, Ltd. Semiconductor device and method for manufacturing the same technical field
KR100411679B1 (ko) 1999-03-16 2003-12-18 세이코 엡슨 가부시키가이샤 반도체 장치 및 그 제조 방법, 회로 기판 및 전자기기
JP3729680B2 (ja) 1999-06-03 2005-12-21 株式会社ルネサステクノロジ 半導体装置の製造方法および半導体装置
JP4015787B2 (ja) 1999-09-03 2007-11-28 松下電器産業株式会社 半導体装置の製造方法
JP3399456B2 (ja) 1999-10-29 2003-04-21 株式会社日立製作所 半導体装置およびその製造方法
JP3452043B2 (ja) 1999-10-29 2003-09-29 株式会社日立製作所 半導体装置およびその製造方法
WO2001071805A1 (fr) * 2000-03-23 2001-09-27 Seiko Epson Corporation Dispositif a semi-conducteur, procede de fabrication, carte de circuit, et dispositif electronique
JP2004104102A (ja) * 2002-08-21 2004-04-02 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器

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