JP3546650B2 - 発光ダイオードの形成方法 - Google Patents

発光ダイオードの形成方法 Download PDF

Info

Publication number
JP3546650B2
JP3546650B2 JP20131197A JP20131197A JP3546650B2 JP 3546650 B2 JP3546650 B2 JP 3546650B2 JP 20131197 A JP20131197 A JP 20131197A JP 20131197 A JP20131197 A JP 20131197A JP 3546650 B2 JP3546650 B2 JP 3546650B2
Authority
JP
Japan
Prior art keywords
light
led chip
light emitting
fluorescent substance
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP20131197A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1146019A5 (enExample
JPH1146019A (ja
Inventor
寛和 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP20131197A priority Critical patent/JP3546650B2/ja
Publication of JPH1146019A publication Critical patent/JPH1146019A/ja
Application granted granted Critical
Publication of JP3546650B2 publication Critical patent/JP3546650B2/ja
Publication of JPH1146019A5 publication Critical patent/JPH1146019A5/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP20131197A 1997-07-28 1997-07-28 発光ダイオードの形成方法 Expired - Lifetime JP3546650B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20131197A JP3546650B2 (ja) 1997-07-28 1997-07-28 発光ダイオードの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20131197A JP3546650B2 (ja) 1997-07-28 1997-07-28 発光ダイオードの形成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2003393661A Division JP2004080058A (ja) 2003-11-25 2003-11-25 発光ダイオード

Publications (3)

Publication Number Publication Date
JPH1146019A JPH1146019A (ja) 1999-02-16
JP3546650B2 true JP3546650B2 (ja) 2004-07-28
JPH1146019A5 JPH1146019A5 (enExample) 2004-10-21

Family

ID=16438912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20131197A Expired - Lifetime JP3546650B2 (ja) 1997-07-28 1997-07-28 発光ダイオードの形成方法

Country Status (1)

Country Link
JP (1) JP3546650B2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011108194A1 (ja) 2010-03-03 2011-09-09 株式会社小糸製作所 発光装置
US8736160B2 (en) 2009-02-13 2014-05-27 Sharp Kabushiki Kaisha Light-emitting apparatus and method for manufacturing same
US9548430B2 (en) 2014-10-23 2017-01-17 Samsung Electronics Co., Ltd. Method of manufacturing light emitting diode package
WO2017069339A1 (ko) * 2015-10-20 2017-04-27 (주)라이타이저코리아 발광 소자 패키지 및 그의 제조 방법

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7476411B1 (en) * 1997-02-24 2009-01-13 Cabot Corporation Direct-write deposition of phosphor powders
JP3775081B2 (ja) * 1998-11-27 2006-05-17 松下電器産業株式会社 半導体発光装置
JP4606530B2 (ja) * 1999-05-14 2011-01-05 株式会社朝日ラバー シート部材およびそれを用いた発光装置
WO2000079605A1 (fr) 1999-06-23 2000-12-28 Citizen Electronics Co., Ltd. Diode électroluminescente
DE50016032D1 (de) * 1999-07-23 2010-12-30 Osram Gmbh Lichtquelle mit einer Leuchtstoffanordnung und Vergussmasse mit einer Leuchtstoffanordnung
DE10010638A1 (de) * 2000-03-03 2001-09-13 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines lichtabstrahlenden Halbleiterkörpers mit Lumineszenzkonversionselement
JP2001298216A (ja) * 2000-04-12 2001-10-26 Matsushita Electric Ind Co Ltd 表面実装型の半導体発光装置
JP2002217459A (ja) * 2001-01-16 2002-08-02 Stanley Electric Co Ltd 発光ダイオード及び該発光ダイオードを光源として用いた液晶表示器のバックライト装置
US7858403B2 (en) 2001-10-31 2010-12-28 Cree, Inc. Methods and systems for fabricating broad spectrum light emitting devices
JP3768864B2 (ja) * 2001-11-26 2006-04-19 シチズン電子株式会社 表面実装型発光ダイオード及びその製造方法
KR20030055843A (ko) * 2001-12-27 2003-07-04 이지원 광각 발광소자를 이용한 광고 표시장치
JP2005019981A (ja) * 2003-06-05 2005-01-20 Matsushita Electric Ind Co Ltd 蛍光体及び半導体発光素子、並びにこれらの製造方法
JP4606000B2 (ja) * 2003-07-17 2011-01-05 三洋電機株式会社 発光ダイオード及びその製造方法
TWI257184B (en) * 2004-03-24 2006-06-21 Toshiba Lighting & Technology Lighting apparatus
JP4692059B2 (ja) * 2005-04-25 2011-06-01 パナソニック電工株式会社 発光装置の製造方法
KR101171182B1 (ko) * 2005-08-05 2012-08-06 삼성전자주식회사 백라이트 유닛 및 이를 사용한 액정 표시 장치
JPWO2007018039A1 (ja) 2005-08-05 2009-02-19 パナソニック株式会社 半導体発光装置
JP2007067326A (ja) * 2005-09-02 2007-03-15 Shinko Electric Ind Co Ltd 発光ダイオード及びその製造方法
JP2008034483A (ja) * 2006-07-26 2008-02-14 Matsushita Electric Works Ltd 化合物半導体素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法
US8159131B2 (en) * 2008-06-30 2012-04-17 Bridgelux, Inc. Light emitting device having a transparent thermally conductive layer
KR101558241B1 (ko) 2009-03-30 2015-10-07 삼성전자 주식회사 발광 장치의 제조 방법
EP2448020A4 (en) 2009-06-23 2014-04-30 Koito Mfg Co Ltd LIGHT-EMITTING MODULE
JP5342368B2 (ja) * 2009-08-06 2013-11-13 株式会社朝日ラバー 発光ダイオード
US8716038B2 (en) 2010-03-02 2014-05-06 Micron Technology, Inc. Microelectronic workpiece processing systems and associated methods of color correction
KR101164926B1 (ko) * 2010-08-16 2012-07-12 (주)아이셀론 Ｌｅｄ 모듈 제조방법
EP2472578B1 (en) * 2010-12-28 2020-06-03 Nichia Corporation Light emitting device
US9470380B2 (en) 2011-06-10 2016-10-18 Koninklijke Philips Electronics N.V. Lighting device with electrostatically adhered scattering particles and method of manufacture
JP5706299B2 (ja) * 2011-11-28 2015-04-22 株式会社東芝 発光装置の製造方法
JP6065408B2 (ja) * 2012-04-27 2017-01-25 日亜化学工業株式会社 発光装置およびその製造方法
CN102832316B (zh) * 2012-08-06 2015-07-15 中南大学 一种提高白光led照明器件色温一致性的方法和装置
JP6435705B2 (ja) * 2013-12-27 2018-12-12 日亜化学工業株式会社 集合基板、発光装置及び発光素子の検査方法
US11313671B2 (en) 2019-05-28 2022-04-26 Mitutoyo Corporation Chromatic confocal range sensing system with enhanced spectrum light source configuration
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
CN111933025B (zh) * 2020-09-03 2023-08-18 成都京东方光电科技有限公司 显示模组、显示装置和电子设备
CN114023206A (zh) * 2021-10-26 2022-02-08 深圳市瑞丰光电子股份有限公司 一种提高mini-LED显示墨色一致性的方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8736160B2 (en) 2009-02-13 2014-05-27 Sharp Kabushiki Kaisha Light-emitting apparatus and method for manufacturing same
US9175818B2 (en) 2009-02-13 2015-11-03 Sharp Kabushiki Kaisha Light-emitting apparatus and method for manufacturing same
WO2011108194A1 (ja) 2010-03-03 2011-09-09 株式会社小糸製作所 発光装置
US9548430B2 (en) 2014-10-23 2017-01-17 Samsung Electronics Co., Ltd. Method of manufacturing light emitting diode package
WO2017069339A1 (ko) * 2015-10-20 2017-04-27 (주)라이타이저코리아 발광 소자 패키지 및 그의 제조 방법

Also Published As

Publication number Publication date
JPH1146019A (ja) 1999-02-16

Similar Documents

Publication Publication Date Title
JP3546650B2 (ja) 発光ダイオードの形成方法
JPH1146019A5 (enExample)
JP3617587B2 (ja) 発光ダイオード及びその形成方法
JP3065263B2 (ja) 発光装置及びそれを用いたｌｅｄ表示器
JP3407608B2 (ja) 発光ダイオード及びその形成方法
US7795624B2 (en) Support body for semiconductor element, method for manufacturing the same and semiconductor device
JP3772801B2 (ja) 発光ダイオード
JP3282176B2 (ja) 発光ダイオードの形成方法
US20110316025A1 (en) Light emitting device
JP3729001B2 (ja) 発光装置、砲弾型発光ダイオード、チップタイプｌｅｄ
JPH10190053A (ja) 発光装置
JPH10228249A (ja) 発光ダイオード及びそれを用いたｌｅｄ表示装置
JP3367096B2 (ja) 発光ダイオードの形成方法
JP2000216434A5 (enExample)
JP5077282B2 (ja) 発光素子搭載用パッケージおよび発光装置
JP2000315826A (ja) 発光装置及びその形成方法、砲弾型発光ダイオード、チップタイプｌｅｄ
JP2000315826A5 (enExample)
JP3858829B2 (ja) 発光ダイオードの形成方法
JP3087828B2 (ja) Ｌｅｄ表示器
JP3775268B2 (ja) 発光装置の形成方法
JP3604298B2 (ja) 発光ダイオードの形成方法
JP2004080058A (ja) 発光ダイオード
JP2003224307A5 (enExample)
JP3835276B2 (ja) 発光ダイオードおよびその形成方法
JPH10233533A (ja) 発光装置の形成方法及び形成装置

Legal Events

Date Code Title Description
TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20040323

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20040405

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080423

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090423

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090423

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090423

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100423

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100423

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110423

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110423

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120423

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120423

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130423

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130423

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140423

Year of fee payment: 10

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term