JP3539634B2 - 回路搭載用窒化ケイ素基板および回路基板 - Google Patents
回路搭載用窒化ケイ素基板および回路基板 Download PDFInfo
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- JP3539634B2 JP3539634B2 JP2001328477A JP2001328477A JP3539634B2 JP 3539634 B2 JP3539634 B2 JP 3539634B2 JP 2001328477 A JP2001328477 A JP 2001328477A JP 2001328477 A JP2001328477 A JP 2001328477A JP 3539634 B2 JP3539634 B2 JP 3539634B2
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- Prior art keywords
- silicon nitride
- substrate
- circuit board
- nitride substrate
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 134
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 134
- 239000000758 substrate Substances 0.000 title claims description 103
- 239000002245 particle Substances 0.000 claims description 50
- 229910052802 copper Inorganic materials 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 239000012071 phase Substances 0.000 description 64
- 229910052751 metal Inorganic materials 0.000 description 36
- 239000002184 metal Substances 0.000 description 36
- 239000010949 copper Substances 0.000 description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 26
- 238000005219 brazing Methods 0.000 description 26
- 239000000463 material Substances 0.000 description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 17
- 238000000034 method Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 12
- 238000001816 cooling Methods 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 238000005304 joining Methods 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 238000005488 sandblasting Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 230000035939 shock Effects 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000004873 anchoring Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005422 blasting Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 238000007719 peel strength test Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000005382 thermal cycling Methods 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- 229910002480 Cu-O Inorganic materials 0.000 description 2
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000002301 combined effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 229910018516 Al—O Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- -1 copper nitride Chemical class 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(i) oxide Chemical compound [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 1
- 229960001826 dimethylphthalate Drugs 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000009628 steelmaking Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
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- Ceramic Products (AREA)
- Manufacturing Of Printed Wiring (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001328477A JP3539634B2 (ja) | 2000-10-26 | 2001-10-26 | 回路搭載用窒化ケイ素基板および回路基板 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000326489 | 2000-10-26 | ||
| JP2000-326489 | 2000-10-26 | ||
| JP2001328477A JP3539634B2 (ja) | 2000-10-26 | 2001-10-26 | 回路搭載用窒化ケイ素基板および回路基板 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004031711A Division JP2004231513A (ja) | 2000-10-26 | 2004-02-09 | 高強度・高熱伝導性に優れた回路基板 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002201076A JP2002201076A (ja) | 2002-07-16 |
| JP3539634B2 true JP3539634B2 (ja) | 2004-07-07 |
| JP2002201076A5 JP2002201076A5 (https=) | 2004-10-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001328477A Expired - Lifetime JP3539634B2 (ja) | 2000-10-26 | 2001-10-26 | 回路搭載用窒化ケイ素基板および回路基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3539634B2 (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011087055A1 (ja) | 2010-01-13 | 2011-07-21 | 京セラ株式会社 | 窒化珪素質基板およびこれを用いた回路基板ならびに電子装置 |
| JP2018207004A (ja) * | 2017-06-07 | 2018-12-27 | 京セラ株式会社 | セラミック板、半導体装置および半導体モジュール |
| WO2024154827A1 (ja) | 2023-01-20 | 2024-07-25 | 株式会社 東芝 | 窒化珪素基板およびそれを用いた窒化珪素回路基板 |
| DE102023126070A1 (de) * | 2023-09-26 | 2025-03-27 | Rogers Germany Gmbh | Verfahren zur Herstellung eines Metall-Keramik-Substrats und Metall-Keramik-Substrat |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4556162B2 (ja) * | 2004-03-11 | 2010-10-06 | 日立金属株式会社 | 窒化珪素質焼結体及びその製造方法、並びにそれを用いた回路基板 |
| JP4596855B2 (ja) * | 2004-08-25 | 2010-12-15 | 京セラ株式会社 | 金属−セラミックス複合構造体およびこれからなるプラズマ発生用電極部材 |
| JP5499374B2 (ja) * | 2008-09-24 | 2014-05-21 | 日立金属株式会社 | 窒化珪素回路基板およびそれを用いた半導体モジュール |
| JP5743752B2 (ja) * | 2011-06-29 | 2015-07-01 | 京セラ株式会社 | 回路基板 |
| JP5651278B1 (ja) * | 2013-03-27 | 2015-01-07 | 日本碍子株式会社 | 半導体用複合基板のハンドル基板 |
| JP6051115B2 (ja) * | 2013-06-15 | 2016-12-27 | 京セラ株式会社 | 放熱部材および電子装置ならびに画像表示装置 |
| JP6499545B2 (ja) * | 2015-08-07 | 2019-04-10 | Ｊｘ金属株式会社 | 金属セラミック接合基板及び、その製造方法 |
| JP6418200B2 (ja) | 2016-05-31 | 2018-11-07 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| JP6536560B2 (ja) | 2016-12-27 | 2019-07-03 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| JP7230432B2 (ja) * | 2017-11-02 | 2023-03-01 | 三菱マテリアル株式会社 | 接合体、及び、絶縁回路基板 |
| WO2021015122A1 (ja) | 2019-07-23 | 2021-01-28 | 日本碍子株式会社 | 接合基板および接合基板の製造方法 |
| WO2021111508A1 (ja) | 2019-12-03 | 2021-06-10 | 日本碍子株式会社 | 接合基板及び接合基板の製造方法 |
| WO2021149161A1 (ja) * | 2020-01-21 | 2021-07-29 | 三菱電機株式会社 | 放熱部材およびヒートシンク |
| WO2022004755A1 (ja) * | 2020-06-30 | 2022-01-06 | 株式会社トクヤマ | 窒化ケイ素焼結基板 |
| JP7654164B2 (ja) * | 2022-06-02 | 2025-03-31 | 株式会社東芝 | セラミックス回路基板およびそれを用いた半導体装置 |
| WO2025110128A1 (ja) * | 2023-11-20 | 2025-05-30 | 株式会社 東芝 | セラミックス基板およびそれを用いたセラミックス回路基板 |
| WO2025205771A1 (ja) * | 2024-03-28 | 2025-10-02 | 京セラ株式会社 | 窒化珪素基板及び冷却装置 |
-
2001
- 2001-10-26 JP JP2001328477A patent/JP3539634B2/ja not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011087055A1 (ja) | 2010-01-13 | 2011-07-21 | 京セラ株式会社 | 窒化珪素質基板およびこれを用いた回路基板ならびに電子装置 |
| JP5665769B2 (ja) * | 2010-01-13 | 2015-02-04 | 京セラ株式会社 | 窒化珪素質基板およびこれを用いた回路基板ならびに電子装置 |
| US9293384B2 (en) | 2010-01-13 | 2016-03-22 | Kyocera Corporation | Silicon nitride substrate, circuit substrate and electronic device using the same |
| JP2018207004A (ja) * | 2017-06-07 | 2018-12-27 | 京セラ株式会社 | セラミック板、半導体装置および半導体モジュール |
| WO2024154827A1 (ja) | 2023-01-20 | 2024-07-25 | 株式会社 東芝 | 窒化珪素基板およびそれを用いた窒化珪素回路基板 |
| EP4654258A1 (en) | 2023-01-20 | 2025-11-26 | Kabushiki Kaisha Toshiba | Silicon nitride substrate and silicon nitride circuit board using same |
| DE102023126070A1 (de) * | 2023-09-26 | 2025-03-27 | Rogers Germany Gmbh | Verfahren zur Herstellung eines Metall-Keramik-Substrats und Metall-Keramik-Substrat |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002201076A (ja) | 2002-07-16 |
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