JP3241338B2 - 半導体発光装置 - Google Patents

半導体発光装置

Info

Publication number
JP3241338B2
JP3241338B2 JP1753599A JP1753599A JP3241338B2 JP 3241338 B2 JP3241338 B2 JP 3241338B2 JP 1753599 A JP1753599 A JP 1753599A JP 1753599 A JP1753599 A JP 1753599A JP 3241338 B2 JP3241338 B2 JP 3241338B2
Authority
JP
Japan
Prior art keywords
light emitting
semiconductor light
epoxy resin
semiconductor
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1753599A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11274571A (ja
Inventor
雅史 蔵本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=11800411&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3241338(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP1753599A priority Critical patent/JP3241338B2/ja
Publication of JPH11274571A publication Critical patent/JPH11274571A/ja
Application granted granted Critical
Publication of JP3241338B2 publication Critical patent/JP3241338B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP1753599A 1998-01-26 1999-01-26 半導体発光装置 Expired - Lifetime JP3241338B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1753599A JP3241338B2 (ja) 1998-01-26 1999-01-26 半導体発光装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1226098 1998-01-26
JP10-12260 1998-01-26
JP1753599A JP3241338B2 (ja) 1998-01-26 1999-01-26 半導体発光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2000072414A Division JP4055322B2 (ja) 1998-01-26 2000-03-15 半導体発光装置

Publications (2)

Publication Number Publication Date
JPH11274571A JPH11274571A (ja) 1999-10-08
JP3241338B2 true JP3241338B2 (ja) 2001-12-25

Family

ID=11800411

Family Applications (2)

Application Number Title Priority Date Filing Date
JP1753599A Expired - Lifetime JP3241338B2 (ja) 1998-01-26 1999-01-26 半導体発光装置
JP2000072414A Expired - Fee Related JP4055322B2 (ja) 1998-01-26 2000-03-15 半導体発光装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2000072414A Expired - Fee Related JP4055322B2 (ja) 1998-01-26 2000-03-15 半導体発光装置

Country Status (1)

Country Link
JP (2) JP3241338B2 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7276562B2 (en) 2004-04-30 2007-10-02 Shin-Etsu Chemical Co., Ltd. Epoxy-silicone mixed resin composition and light-emitting semiconductor device
US7498085B2 (en) 2003-11-20 2009-03-03 Shin-Etsu Chemical Co., Ltd. Epoxy/silicone mixed resin composition and light-emitting semiconductor device
US7807736B2 (en) 2006-07-18 2010-10-05 Shin-Etsu Chemical Co., Ltd. Semiconductor device encapsulated by silicone resin composition, and silicone resin tablet for encapsulating semiconductor device
JP2011009346A (ja) * 2009-06-24 2011-01-13 Shin-Etsu Chemical Co Ltd 光半導体装置
EP2336230A1 (en) 2009-12-15 2011-06-22 Shin-Etsu Chemical Co., Ltd. Resin composition for encapsulating optical semiconductor element and optical semiconductor device
EP2565949A2 (en) 2011-09-02 2013-03-06 Shin-Etsu Chemical Co., Ltd. Optical semiconductor device
US8710158B2 (en) 2010-04-07 2014-04-29 Shin-Etsu Chemical Co., Ltd. Epoxy composition for encapsulating an optical semiconductor element
KR20170061655A (ko) 2010-06-08 2017-06-05 신에쓰 가가꾸 고교 가부시끼가이샤 광반도체 소자 밀봉용 수지 조성물 및 발광 장치

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JP2000208822A (ja) * 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
JP2001196642A (ja) * 2000-01-11 2001-07-19 Toyoda Gosei Co Ltd 発光装置
JP2002133925A (ja) * 2000-10-25 2002-05-10 Sanken Electric Co Ltd 蛍光カバー及び半導体発光装置
JP2002226551A (ja) * 2001-01-31 2002-08-14 Matsushita Electric Ind Co Ltd 発光ダイオード
US6730942B2 (en) 2002-01-24 2004-05-04 Toyoda Gosei Co., Ltd. Light emitting apparatus
KR100632660B1 (ko) * 2002-05-29 2006-10-11 서울반도체 주식회사 핑크 칩 발광 다이오드 및 그 제작 방법
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
ATE543221T1 (de) 2002-09-19 2012-02-15 Cree Inc Leuchtstoffbeschichtete leuchtdioden mit verjüngten seitenwänden und herstellungsverfahren dafür
TW200427111A (en) 2003-03-12 2004-12-01 Shinetsu Chemical Co Material for coating/protecting light-emitting semiconductor and the light-emitting semiconductor device
TWI373150B (en) 2003-07-09 2012-09-21 Shinetsu Chemical Co Silicone rubber composition, light-emitting semiconductor embedding/protecting material and light-emitting semiconductor device
JP4586967B2 (ja) * 2003-07-09 2010-11-24 信越化学工業株式会社 発光半導体被覆保護材及び発光半導体装置
US20050104072A1 (en) 2003-08-14 2005-05-19 Slater David B.Jr. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
US7183587B2 (en) 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7029935B2 (en) 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US20060097385A1 (en) 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
US7322732B2 (en) 2004-12-23 2008-01-29 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
US7304694B2 (en) 2005-01-12 2007-12-04 Cree, Inc. Solid colloidal dispersions for backlighting of liquid crystal displays
EP1969633B1 (en) 2005-12-22 2018-08-29 Cree, Inc. Lighting device
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
JP2009524247A (ja) 2006-01-20 2009-06-25 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド ルミファー膜を空間的に分離することにより固体光発光素子におけるスペクトル内容をシフトすること
KR20090031370A (ko) 2006-05-23 2009-03-25 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
US8466611B2 (en) 2009-12-14 2013-06-18 Cree, Inc. Lighting device with shaped remote phosphor
WO2011090362A2 (ko) 2010-01-25 2011-07-28 (주)Lg화학 실리콘 수지
WO2011090361A2 (ko) 2010-01-25 2011-07-28 (주)Lg화학 경화성 조성물
WO2011090364A2 (ko) 2010-01-25 2011-07-28 (주)Lg화학 경화성 조성물
US8772817B2 (en) 2010-12-22 2014-07-08 Cree, Inc. Electronic device submounts including substrates with thermally conductive vias
EP2662412B1 (en) 2011-01-06 2018-07-11 LG Chem, Ltd. Curable composition
WO2012093907A2 (ko) 2011-01-06 2012-07-12 주식회사 엘지화학 경화성 조성물
WO2012093910A2 (ko) 2011-01-06 2012-07-12 주식회사 엘지화학 경화성 조성물
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CN103649227B (zh) 2011-05-04 2016-02-24 Lg化学株式会社 可固化组合物
CN103608408B (zh) 2011-06-17 2016-04-13 Lg化学株式会社 可固化组合物
CN103827216B (zh) 2011-07-22 2016-03-16 Lg化学株式会社 可固化组合物
WO2013077706A1 (ko) 2011-11-25 2013-05-30 주식회사 엘지화학 경화성 조성물
WO2013077707A1 (ko) 2011-11-25 2013-05-30 주식회사 엘지화학 경화성 조성물
WO2013077708A1 (ko) 2011-11-25 2013-05-30 주식회사 엘지화학 경화성 조성물
EP2784126B1 (en) 2011-11-25 2019-03-13 LG Chem, Ltd. Curable composition
TWI473841B (zh) 2011-11-25 2015-02-21 Ｌｇ化學股份有限公司 可固化之組成物
EP2784124B1 (en) 2011-11-25 2016-06-29 LG Chem, Ltd. Curable composition
JP6203189B2 (ja) 2011-11-25 2017-09-27 エルジー・ケム・リミテッド 硬化性組成物
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
KR101560044B1 (ko) 2012-07-27 2015-10-15 주식회사 엘지화학 경화성 조성물
CN104508046B (zh) 2012-07-27 2017-08-01 Lg化学株式会社 可固化组合物
EP2878636B1 (en) 2012-07-27 2016-12-28 LG Chem, Ltd. Curable composition
CN104487517B (zh) 2012-07-27 2017-06-13 Lg化学株式会社 可固化组合物
WO2014017886A1 (ko) 2012-07-27 2014-01-30 주식회사 엘지화학 경화성 조성물
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TWI510555B (zh) 2012-07-27 2015-12-01 Lg Chemical Ltd 可固化組成物
KR101591167B1 (ko) 2013-04-04 2016-02-02 주식회사 엘지화학 경화성 조성물
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Ｐｒｏｃ．ＳＰＩＥ Ｉｎｔ．Ｓｏｃ．Ｏｐｔ．Ｅｎｇ．Ｖｏｌ．３００２（１９９７）ｐ．２６−３５

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7498085B2 (en) 2003-11-20 2009-03-03 Shin-Etsu Chemical Co., Ltd. Epoxy/silicone mixed resin composition and light-emitting semiconductor device
US7276562B2 (en) 2004-04-30 2007-10-02 Shin-Etsu Chemical Co., Ltd. Epoxy-silicone mixed resin composition and light-emitting semiconductor device
US7807736B2 (en) 2006-07-18 2010-10-05 Shin-Etsu Chemical Co., Ltd. Semiconductor device encapsulated by silicone resin composition, and silicone resin tablet for encapsulating semiconductor device
JP2011009346A (ja) * 2009-06-24 2011-01-13 Shin-Etsu Chemical Co Ltd 光半導体装置
EP2336230A1 (en) 2009-12-15 2011-06-22 Shin-Etsu Chemical Co., Ltd. Resin composition for encapsulating optical semiconductor element and optical semiconductor device
US8710158B2 (en) 2010-04-07 2014-04-29 Shin-Etsu Chemical Co., Ltd. Epoxy composition for encapsulating an optical semiconductor element
KR20170061655A (ko) 2010-06-08 2017-06-05 신에쓰 가가꾸 고교 가부시끼가이샤 광반도체 소자 밀봉용 수지 조성물 및 발광 장치
EP2565949A2 (en) 2011-09-02 2013-03-06 Shin-Etsu Chemical Co., Ltd. Optical semiconductor device
US9306133B2 (en) 2011-09-02 2016-04-05 Shin-Etsu Chemical Co., Ltd. Optical semiconductor device

Also Published As

Publication number Publication date
JPH11274571A (ja) 1999-10-08
JP2000286458A (ja) 2000-10-13
JP4055322B2 (ja) 2008-03-05

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