JP3198586B2 - ドライエッチング方法 - Google Patents

ドライエッチング方法

Info

Publication number
JP3198586B2
JP3198586B2 JP05910692A JP5910692A JP3198586B2 JP 3198586 B2 JP3198586 B2 JP 3198586B2 JP 05910692 A JP05910692 A JP 05910692A JP 5910692 A JP5910692 A JP 5910692A JP 3198586 B2 JP3198586 B2 JP 3198586B2
Authority
JP
Japan
Prior art keywords
etching
film
gas
etched
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP05910692A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05226304A (ja
Inventor
新吾 門村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP05910692A priority Critical patent/JP3198586B2/ja
Priority to US08/013,325 priority patent/US5391244A/en
Priority to EP93102170A priority patent/EP0555858B1/en
Priority to DE69331862T priority patent/DE69331862T2/de
Priority to KR1019930001891A priority patent/KR100255402B1/ko
Publication of JPH05226304A publication Critical patent/JPH05226304A/ja
Application granted granted Critical
Publication of JP3198586B2 publication Critical patent/JP3198586B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP05910692A 1992-02-14 1992-02-14 ドライエッチング方法 Expired - Fee Related JP3198586B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP05910692A JP3198586B2 (ja) 1992-02-14 1992-02-14 ドライエッチング方法
US08/013,325 US5391244A (en) 1992-02-14 1993-02-04 Dry etching method
EP93102170A EP0555858B1 (en) 1992-02-14 1993-02-11 Method of dry etching a polycide without using a CFC gas
DE69331862T DE69331862T2 (de) 1992-02-14 1993-02-11 Trockenätzverfahren eines Polyzids ohne Verwendung von FCKW-Gasen
KR1019930001891A KR100255402B1 (ko) 1992-02-14 1993-02-12 드라이에칭방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05910692A JP3198586B2 (ja) 1992-02-14 1992-02-14 ドライエッチング方法

Publications (2)

Publication Number Publication Date
JPH05226304A JPH05226304A (ja) 1993-09-03
JP3198586B2 true JP3198586B2 (ja) 2001-08-13

Family

ID=13103735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05910692A Expired - Fee Related JP3198586B2 (ja) 1992-02-14 1992-02-14 ドライエッチング方法

Country Status (5)

Country Link
US (1) US5391244A (enExample)
EP (1) EP0555858B1 (enExample)
JP (1) JP3198586B2 (enExample)
KR (1) KR100255402B1 (enExample)
DE (1) DE69331862T2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2650178B2 (ja) * 1992-12-05 1997-09-03 ヤマハ株式会社 ドライエッチング方法及び装置
JPH0786244A (ja) * 1993-09-13 1995-03-31 Sony Corp ドライエッチング方法
US5674782A (en) * 1993-12-31 1997-10-07 Samsung Electronics Co., Ltd. Method for efficiently removing by-products produced in dry-etching
GB2297864B (en) * 1994-12-12 1998-11-11 Japan Res Dev Corp Method for etching semiconductor crystals
US5554563A (en) * 1995-04-04 1996-09-10 Taiwan Semiconductor Manufacturing Company In situ hot bake treatment that prevents precipitate formation after a contact layer etch back step
JPH10223608A (ja) * 1997-02-04 1998-08-21 Sony Corp 半導体装置の製造方法
US5882535A (en) * 1997-02-04 1999-03-16 Micron Technology, Inc. Method for forming a hole in a semiconductor device
KR100673142B1 (ko) * 2000-05-29 2007-01-22 주식회사 하이닉스반도체 게이트 전극 형성 방법
JP2003195082A (ja) * 2001-12-26 2003-07-09 Hitachi Cable Ltd 溝部の形成方法および光導波路素子の製造方法
US6855643B2 (en) * 2002-07-12 2005-02-15 Padmapani C. Nallan Method for fabricating a gate structure
JP2009021584A (ja) * 2007-06-27 2009-01-29 Applied Materials Inc 高ｋ材料ゲート構造の高温エッチング方法
US9533332B2 (en) 2011-10-06 2017-01-03 Applied Materials, Inc. Methods for in-situ chamber clean utilized in an etching processing chamber
US8932947B1 (en) 2013-07-23 2015-01-13 Applied Materials, Inc. Methods for forming a round bottom silicon trench recess for semiconductor applications
US9214377B2 (en) 2013-10-31 2015-12-15 Applied Materials, Inc. Methods for silicon recess structures in a substrate by utilizing a doping layer
CN110571129B (zh) * 2018-06-05 2022-08-02 上海新微技术研发中心有限公司 一种导电金属氧化物的加工方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4465552A (en) * 1983-08-11 1984-08-14 Allied Corporation Method of selectively etching silicon dioxide with SF6 /nitriding component gas
JPS6050923A (ja) * 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
JPS61220432A (ja) * 1985-03-27 1986-09-30 Hitachi Ltd エツチング方法
JPS648628A (en) * 1987-06-30 1989-01-12 Kyocera Corp Gas etching
JPS6432627A (en) * 1987-07-29 1989-02-02 Hitachi Ltd Low-temperature dry etching method
JPH01166539A (ja) * 1987-12-23 1989-06-30 Hitachi Ltd 低温ドライエツチング方法および低温ドライエツチング装置
JPH0817170B2 (ja) * 1988-07-28 1996-02-21 富士通株式会社 半導体装置のエッチング方法
JP2681117B2 (ja) * 1989-04-26 1997-11-26 康夫 南日 化合物半導体表面の安定化方法
JPH0336723A (ja) * 1989-07-04 1991-02-18 Fujitsu Ltd 半導体装置の製造方法及び電子サイクロトロン共鳴エッチング装置
JP2591209B2 (ja) * 1990-01-22 1997-03-19 ソニー株式会社 ドライエッチング方法
JP2964605B2 (ja) * 1990-10-04 1999-10-18 ソニー株式会社 ドライエッチング方法
JP3220992B2 (ja) * 1991-01-22 2001-10-22 ソニー株式会社 ドライエッチング方法
JP3371143B2 (ja) * 1991-06-03 2003-01-27 ソニー株式会社 ドライエッチング方法

Also Published As

Publication number Publication date
DE69331862D1 (de) 2002-06-06
EP0555858B1 (en) 2002-05-02
KR100255402B1 (ko) 2000-06-01
EP0555858A2 (en) 1993-08-18
DE69331862T2 (de) 2002-10-31
US5391244A (en) 1995-02-21
JPH05226304A (ja) 1993-09-03
EP0555858A3 (enExample) 1995-02-22
KR930018664A (ko) 1993-09-22

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