JP3101953B2 - 記録素子のテスト機能を有するメモリ回路 - Google Patents

記録素子のテスト機能を有するメモリ回路

Info

Publication number
JP3101953B2
JP3101953B2 JP02022322A JP2232290A JP3101953B2 JP 3101953 B2 JP3101953 B2 JP 3101953B2 JP 02022322 A JP02022322 A JP 02022322A JP 2232290 A JP2232290 A JP 2232290A JP 3101953 B2 JP3101953 B2 JP 3101953B2
Authority
JP
Japan
Prior art keywords
test
data
circuit
potential
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP02022322A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0312100A (ja
Inventor
ホーン チョイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH0312100A publication Critical patent/JPH0312100A/ja
Application granted granted Critical
Publication of JP3101953B2 publication Critical patent/JP3101953B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/34—Accessing multiple bits simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/36—Data generation devices, e.g. data inverters

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP02022322A 1989-06-10 1990-02-02 記録素子のテスト機能を有するメモリ回路 Expired - Fee Related JP3101953B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019890008002A KR920001080B1 (ko) 1989-06-10 1989-06-10 메모리소자의 데이타 기록 방법 및 테스트 회로
KR89-8002 1989-06-10

Publications (2)

Publication Number Publication Date
JPH0312100A JPH0312100A (ja) 1991-01-21
JP3101953B2 true JP3101953B2 (ja) 2000-10-23

Family

ID=19286971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02022322A Expired - Fee Related JP3101953B2 (ja) 1989-06-10 1990-02-02 記録素子のテスト機能を有するメモリ回路

Country Status (10)

Country Link
JP (1) JP3101953B2 (zh)
KR (1) KR920001080B1 (zh)
CN (1) CN1019243B (zh)
DE (1) DE4003132A1 (zh)
FR (1) FR2648266B1 (zh)
GB (1) GB2232496B (zh)
IT (1) IT1248750B (zh)
NL (1) NL194812C (zh)
RU (1) RU2084972C1 (zh)
SE (1) SE512452C2 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05128899A (ja) * 1991-10-29 1993-05-25 Mitsubishi Electric Corp 半導体記憶装置
AU2003207364A1 (en) * 2002-02-26 2003-09-09 Koninklijke Philips Electronics N.V. Non-volatile memory test structure and method
WO2016143169A1 (en) * 2015-03-09 2016-09-15 Kabushiki Kaisha Toshiba Semiconductor storage device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59185097A (ja) * 1983-04-04 1984-10-20 Oki Electric Ind Co Ltd 自己診断機能付メモリ装置
JPS62229599A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 不揮発性半導体記憶装置
DE3773773D1 (de) * 1986-06-25 1991-11-21 Nec Corp Pruefschaltung fuer eine speichereinrichtung mit willkuerlichem zugriff.
KR910001534B1 (ko) * 1986-09-08 1991-03-15 가부시키가이샤 도시바 반도체기억장치
JPS6446300A (en) * 1987-08-17 1989-02-20 Nippon Telegraph & Telephone Semiconductor memory
JPH01113999A (ja) * 1987-10-28 1989-05-02 Toshiba Corp 不揮発性メモリのストレステスト回路

Also Published As

Publication number Publication date
NL194812B (nl) 2002-11-01
RU2084972C1 (ru) 1997-07-20
KR920001080B1 (ko) 1992-02-01
CN1048463A (zh) 1991-01-09
KR910001779A (ko) 1991-01-31
IT9020566A1 (it) 1991-12-07
SE512452C2 (sv) 2000-03-20
CN1019243B (zh) 1992-11-25
GB2232496A (en) 1990-12-12
SE9002030D0 (sv) 1990-06-06
NL9000261A (nl) 1991-01-02
DE4003132C2 (zh) 1992-06-04
IT9020566A0 (zh) 1990-06-07
IT1248750B (it) 1995-01-27
DE4003132A1 (de) 1990-12-20
FR2648266B1 (fr) 1993-12-24
GB9002396D0 (en) 1990-04-04
FR2648266A1 (fr) 1990-12-14
SE9002030L (sv) 1990-12-11
NL194812C (nl) 2003-03-04
GB2232496B (en) 1993-06-02
JPH0312100A (ja) 1991-01-21

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