FR2648266B1 - Procede permettant d'ecrire des donnees lors de l'essai d'un dispositif de memoire, et circuit d'essai de dispositif de memoire - Google Patents

Procede permettant d'ecrire des donnees lors de l'essai d'un dispositif de memoire, et circuit d'essai de dispositif de memoire

Info

Publication number
FR2648266B1
FR2648266B1 FR9001203A FR9001203A FR2648266B1 FR 2648266 B1 FR2648266 B1 FR 2648266B1 FR 9001203 A FR9001203 A FR 9001203A FR 9001203 A FR9001203 A FR 9001203A FR 2648266 B1 FR2648266 B1 FR 2648266B1
Authority
FR
France
Prior art keywords
memory device
testing
writing data
testing circuit
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9001203A
Other languages
English (en)
French (fr)
Other versions
FR2648266A1 (fr
Inventor
Hoon Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2648266A1 publication Critical patent/FR2648266A1/fr
Application granted granted Critical
Publication of FR2648266B1 publication Critical patent/FR2648266B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4094Bit-line management or control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30Accessing single arrays
    • G11C29/34Accessing multiple bits simultaneously
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/36Data generation devices, e.g. data inverters

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
FR9001203A 1989-06-10 1990-02-01 Procede permettant d'ecrire des donnees lors de l'essai d'un dispositif de memoire, et circuit d'essai de dispositif de memoire Expired - Lifetime FR2648266B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890008002A KR920001080B1 (ko) 1989-06-10 1989-06-10 메모리소자의 데이타 기록 방법 및 테스트 회로

Publications (2)

Publication Number Publication Date
FR2648266A1 FR2648266A1 (fr) 1990-12-14
FR2648266B1 true FR2648266B1 (fr) 1993-12-24

Family

ID=19286971

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9001203A Expired - Lifetime FR2648266B1 (fr) 1989-06-10 1990-02-01 Procede permettant d'ecrire des donnees lors de l'essai d'un dispositif de memoire, et circuit d'essai de dispositif de memoire

Country Status (10)

Country Link
JP (1) JP3101953B2 (zh)
KR (1) KR920001080B1 (zh)
CN (1) CN1019243B (zh)
DE (1) DE4003132A1 (zh)
FR (1) FR2648266B1 (zh)
GB (1) GB2232496B (zh)
IT (1) IT1248750B (zh)
NL (1) NL194812C (zh)
RU (1) RU2084972C1 (zh)
SE (1) SE512452C2 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05128899A (ja) * 1991-10-29 1993-05-25 Mitsubishi Electric Corp 半導体記憶装置
AU2003207364A1 (en) * 2002-02-26 2003-09-09 Koninklijke Philips Electronics N.V. Non-volatile memory test structure and method
CN107430881B (zh) * 2015-03-09 2021-03-23 东芝存储器株式会社 半导体存储装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59185097A (ja) * 1983-04-04 1984-10-20 Oki Electric Ind Co Ltd 自己診断機能付メモリ装置
JPS62229599A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 不揮発性半導体記憶装置
EP0253161B1 (en) * 1986-06-25 1991-10-16 Nec Corporation Testing circuit for random access memory device
KR910001534B1 (ko) * 1986-09-08 1991-03-15 가부시키가이샤 도시바 반도체기억장치
JPS6446300A (en) * 1987-08-17 1989-02-20 Nippon Telegraph & Telephone Semiconductor memory
JPH01113999A (ja) * 1987-10-28 1989-05-02 Toshiba Corp 不揮発性メモリのストレステスト回路

Also Published As

Publication number Publication date
JP3101953B2 (ja) 2000-10-23
GB2232496A (en) 1990-12-12
CN1048463A (zh) 1991-01-09
GB2232496B (en) 1993-06-02
SE512452C2 (sv) 2000-03-20
KR910001779A (ko) 1991-01-31
GB9002396D0 (en) 1990-04-04
FR2648266A1 (fr) 1990-12-14
IT9020566A0 (zh) 1990-06-07
DE4003132C2 (zh) 1992-06-04
DE4003132A1 (de) 1990-12-20
CN1019243B (zh) 1992-11-25
NL194812B (nl) 2002-11-01
SE9002030D0 (sv) 1990-06-06
IT1248750B (it) 1995-01-27
SE9002030L (sv) 1990-12-11
KR920001080B1 (ko) 1992-02-01
IT9020566A1 (it) 1991-12-07
JPH0312100A (ja) 1991-01-21
NL9000261A (nl) 1991-01-02
RU2084972C1 (ru) 1997-07-20
NL194812C (nl) 2003-03-04

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