JP2856135B2 - 電界放出冷陰極素子の固定構造及び固定方法 - Google Patents

電界放出冷陰極素子の固定構造及び固定方法

Info

Publication number
JP2856135B2
JP2856135B2 JP8014059A JP1405996A JP2856135B2 JP 2856135 B2 JP2856135 B2 JP 2856135B2 JP 8014059 A JP8014059 A JP 8014059A JP 1405996 A JP1405996 A JP 1405996A JP 2856135 B2 JP2856135 B2 JP 2856135B2
Authority
JP
Japan
Prior art keywords
cold cathode
field emission
cathode device
mounting
emission cold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP8014059A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09213200A (ja
Inventor
祐司 近藤
阿喜宏 矢野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP8014059A priority Critical patent/JP2856135B2/ja
Priority to KR1019970002592A priority patent/KR100240305B1/ko
Priority to US08/790,469 priority patent/US5923956A/en
Priority to TW086101352A priority patent/TW313668B/zh
Publication of JPH09213200A publication Critical patent/JPH09213200A/ja
Application granted granted Critical
Publication of JP2856135B2 publication Critical patent/JP2856135B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48—Electron guns
    • H01J29/485—Construction of the gun or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/18—Assembling together the component parts of electrode systems
    • H10W46/101—
    • H10W46/301—
    • H10W70/682—
    • H10W72/01308—
    • H10W72/073—
    • H10W72/07311—
    • H10W72/07331—
    • H10W72/07336—
    • H10W72/07337—
    • H10W72/352—
    • H10W90/736—
    • H10W90/754—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Cold Cathode And The Manufacture (AREA)
JP8014059A 1996-01-30 1996-01-30 電界放出冷陰極素子の固定構造及び固定方法 Expired - Lifetime JP2856135B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8014059A JP2856135B2 (ja) 1996-01-30 1996-01-30 電界放出冷陰極素子の固定構造及び固定方法
KR1019970002592A KR100240305B1 (ko) 1996-01-30 1997-01-29 기판 상에 반도체 칩을 고정하는 방법과 그의 구조
US08/790,469 US5923956A (en) 1996-01-30 1997-01-29 Method of securing a semiconductor chip on a base plate and structure thereof
TW086101352A TW313668B (enExample) 1996-01-30 1997-02-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8014059A JP2856135B2 (ja) 1996-01-30 1996-01-30 電界放出冷陰極素子の固定構造及び固定方法

Publications (2)

Publication Number Publication Date
JPH09213200A JPH09213200A (ja) 1997-08-15
JP2856135B2 true JP2856135B2 (ja) 1999-02-10

Family

ID=11850526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8014059A Expired - Lifetime JP2856135B2 (ja) 1996-01-30 1996-01-30 電界放出冷陰極素子の固定構造及び固定方法

Country Status (4)

Country Link
US (1) US5923956A (enExample)
JP (1) JP2856135B2 (enExample)
KR (1) KR100240305B1 (enExample)
TW (1) TW313668B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105480936A (zh) * 2014-09-17 2016-04-13 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法和电子装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6400070B1 (en) * 1997-08-08 2002-06-04 Pioneer Electronic Corporation Electron emission device and display device using the same
JP5031136B2 (ja) * 2000-03-01 2012-09-19 浜松ホトニクス株式会社 半導体レーザ装置
DE102004055511B3 (de) * 2004-11-17 2006-02-09 Danfoss Silicon Power Gmbh Verfahren zum Herstellen eines Leistungshalbleitermoduls
US11387373B2 (en) * 2019-07-29 2022-07-12 Nxp Usa, Inc. Low drain-source on resistance semiconductor component and method of fabrication

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8602330A (nl) * 1986-09-15 1988-04-05 Philips Nv Werkwijze voor het contacteren van halfgeleiderkathoden, alsmede voor het vervaardigen van een electronenbuis voorzien van een dergelijke kathode.
JPH01108734A (ja) * 1987-10-22 1989-04-26 Toshiba Components Co Ltd 半導体装置
US5187123A (en) * 1988-04-30 1993-02-16 Matsushita Electric Industrial Co., Ltd. Method for bonding a semiconductor device to a lead frame die pad using plural adhesive spots
WO1993017457A1 (fr) * 1989-07-01 1993-09-02 Ryo Enomoto Substrat pour montage d'un semiconducteur et procede de realisation
US5194695A (en) * 1990-11-02 1993-03-16 Ak Technology, Inc. Thermoplastic semiconductor package
JPH04221865A (ja) * 1990-12-20 1992-08-12 Fujikura Ltd 微小素子の固定方法
US5211707A (en) * 1991-07-11 1993-05-18 Gte Laboratories Incorporated Semiconductor metal composite field emission cathodes
JP3018050B2 (ja) * 1991-11-15 2000-03-13 ローム株式会社 半導体装置およびその製造方法
US5318918A (en) * 1991-12-31 1994-06-07 Texas Instruments Incorporated Method of making an array of electron emitters
US5229331A (en) * 1992-02-14 1993-07-20 Micron Technology, Inc. Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology
JPH0721903A (ja) * 1993-07-01 1995-01-24 Nec Corp 電界放出型陰極を用いた陰極線管用電子銃構体
JPH07161304A (ja) * 1993-12-13 1995-06-23 Nec Kansai Ltd 陰極構体および陰極構体用電界放出型陰極
US5585301A (en) * 1995-07-14 1996-12-17 Micron Display Technology, Inc. Method for forming high resistance resistors for limiting cathode current in field emission displays

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105480936A (zh) * 2014-09-17 2016-04-13 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法和电子装置
CN105480936B (zh) * 2014-09-17 2017-05-10 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法和电子装置

Also Published As

Publication number Publication date
TW313668B (enExample) 1997-08-21
KR100240305B1 (ko) 2000-01-15
US5923956A (en) 1999-07-13
KR970060459A (ko) 1997-08-12
JPH09213200A (ja) 1997-08-15

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Legal Events

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A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 19981027