TW313668B - - Google Patents

Download PDF

Info

Publication number
TW313668B
TW313668B TW086101352A TW86101352A TW313668B TW 313668 B TW313668 B TW 313668B TW 086101352 A TW086101352 A TW 086101352A TW 86101352 A TW86101352 A TW 86101352A TW 313668 B TW313668 B TW 313668B
Authority
TW
Taiwan
Prior art keywords
substrate
cold cathode
semiconductor wafer
mounting
fixing
Prior art date
Application number
TW086101352A
Other languages
English (en)
Chinese (zh)
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW313668B publication Critical patent/TW313668B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48Electron guns
    • H01J29/485Construction of the gun or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/18Assembling together the component parts of electrode systems
    • H10W46/101
    • H10W46/301
    • H10W70/682
    • H10W72/01308
    • H10W72/073
    • H10W72/07311
    • H10W72/07331
    • H10W72/07336
    • H10W72/07337
    • H10W72/352
    • H10W90/736
    • H10W90/754

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Cold Cathode And The Manufacture (AREA)
TW086101352A 1996-01-30 1997-02-04 TW313668B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8014059A JP2856135B2 (ja) 1996-01-30 1996-01-30 電界放出冷陰極素子の固定構造及び固定方法

Publications (1)

Publication Number Publication Date
TW313668B true TW313668B (enExample) 1997-08-21

Family

ID=11850526

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086101352A TW313668B (enExample) 1996-01-30 1997-02-04

Country Status (4)

Country Link
US (1) US5923956A (enExample)
JP (1) JP2856135B2 (enExample)
KR (1) KR100240305B1 (enExample)
TW (1) TW313668B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6400070B1 (en) * 1997-08-08 2002-06-04 Pioneer Electronic Corporation Electron emission device and display device using the same
JP5031136B2 (ja) * 2000-03-01 2012-09-19 浜松ホトニクス株式会社 半導体レーザ装置
DE102004055511B3 (de) * 2004-11-17 2006-02-09 Danfoss Silicon Power Gmbh Verfahren zum Herstellen eines Leistungshalbleitermoduls
CN105480936B (zh) * 2014-09-17 2017-05-10 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法和电子装置
US11387373B2 (en) * 2019-07-29 2022-07-12 Nxp Usa, Inc. Low drain-source on resistance semiconductor component and method of fabrication

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8602330A (nl) * 1986-09-15 1988-04-05 Philips Nv Werkwijze voor het contacteren van halfgeleiderkathoden, alsmede voor het vervaardigen van een electronenbuis voorzien van een dergelijke kathode.
JPH01108734A (ja) * 1987-10-22 1989-04-26 Toshiba Components Co Ltd 半導体装置
US5187123A (en) * 1988-04-30 1993-02-16 Matsushita Electric Industrial Co., Ltd. Method for bonding a semiconductor device to a lead frame die pad using plural adhesive spots
WO1993017457A1 (fr) * 1989-07-01 1993-09-02 Ryo Enomoto Substrat pour montage d'un semiconducteur et procede de realisation
US5194695A (en) * 1990-11-02 1993-03-16 Ak Technology, Inc. Thermoplastic semiconductor package
JPH04221865A (ja) * 1990-12-20 1992-08-12 Fujikura Ltd 微小素子の固定方法
US5211707A (en) * 1991-07-11 1993-05-18 Gte Laboratories Incorporated Semiconductor metal composite field emission cathodes
JP3018050B2 (ja) * 1991-11-15 2000-03-13 ローム株式会社 半導体装置およびその製造方法
US5318918A (en) * 1991-12-31 1994-06-07 Texas Instruments Incorporated Method of making an array of electron emitters
US5229331A (en) * 1992-02-14 1993-07-20 Micron Technology, Inc. Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology
JPH0721903A (ja) * 1993-07-01 1995-01-24 Nec Corp 電界放出型陰極を用いた陰極線管用電子銃構体
JPH07161304A (ja) * 1993-12-13 1995-06-23 Nec Kansai Ltd 陰極構体および陰極構体用電界放出型陰極
US5585301A (en) * 1995-07-14 1996-12-17 Micron Display Technology, Inc. Method for forming high resistance resistors for limiting cathode current in field emission displays

Also Published As

Publication number Publication date
JP2856135B2 (ja) 1999-02-10
KR100240305B1 (ko) 2000-01-15
US5923956A (en) 1999-07-13
KR970060459A (ko) 1997-08-12
JPH09213200A (ja) 1997-08-15

Similar Documents

Publication Publication Date Title
JP5539618B2 (ja) 超高真空管のための半導体取り付け
US20050135105A1 (en) LED package assembly
JP2008244473A (ja) スタンドオフ付きフレキシブル電子回路パッケージ、及びその製造方法
US8810016B2 (en) Semiconductor device, substrate and semiconductor device manufacturing method
US20130286566A1 (en) Electronic component, mounting member, electronic apparatus, and their manufacturing methods
BR102013010101A2 (pt) Componente e aparelho eletrônico
JPS58145169A (ja) 光半導体装置
JPH06151587A (ja) 半導体集積回路パッケージ、その製造方法、及びその実装方法
US6937406B2 (en) Optical module and method for manufacturing optical module
TW313668B (enExample)
KR100384990B1 (ko) 기계적및전기적기판연결방법
US3476986A (en) Pressure contact semiconductor devices
JP2020025135A (ja) 電子部品、電子モジュールおよびこれらの製造方法
JP3671999B2 (ja) 半導体装置およびその製造方法ならびに半導体実装装置
JP2018139237A (ja) レーザモジュール
US6407401B1 (en) Photoconductive relay and method of making same
KR100239128B1 (ko) 반도체 장치및 그의 제조방법
JP2587819Y2 (ja) 蛍光表示装置
JP4635047B2 (ja) 半導体装置及びその製造方法
CN119923053B (zh) 一种led器件及其制作方法
JP2921179B2 (ja) フリップチップの実装方法
JP2565360B2 (ja) 半導体装置
US11710719B2 (en) Method for manufacturing electronic device
EP0661739A2 (en) Pin-grid array with a cooling structure
JP2833167B2 (ja) はんだバンプの形成方法および実装方法