JP2824817B2 - マスクの製造方法 - Google Patents
マスクの製造方法Info
- Publication number
- JP2824817B2 JP2824817B2 JP2333292A JP2333292A JP2824817B2 JP 2824817 B2 JP2824817 B2 JP 2824817B2 JP 2333292 A JP2333292 A JP 2333292A JP 2333292 A JP2333292 A JP 2333292A JP 2824817 B2 JP2824817 B2 JP 2824817B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mask
- pattern
- oxidized
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 21
- 229910052804 chromium Inorganic materials 0.000 claims description 15
- 239000011651 chromium Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 13
- 239000004926 polymethyl methacrylate Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 7
- 230000010363 phase shift Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000012476 oxidizable substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR461/1991 | 1991-01-14 | ||
| KR1019910000461A KR0172816B1 (ko) | 1991-01-14 | 1991-01-14 | 마스크 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06138637A JPH06138637A (ja) | 1994-05-20 |
| JP2824817B2 true JP2824817B2 (ja) | 1998-11-18 |
Family
ID=19309740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2333292A Expired - Fee Related JP2824817B2 (ja) | 1991-01-14 | 1992-01-14 | マスクの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5597666A (Direct) |
| JP (1) | JP2824817B2 (Direct) |
| KR (1) | KR0172816B1 (Direct) |
| DE (1) | DE4200647C2 (Direct) |
| TW (1) | TW276352B (Direct) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0152952B1 (ko) * | 1995-05-13 | 1998-10-01 | 문정환 | 위상반전 마스크 및 그 제조방법 |
| KR0166825B1 (ko) * | 1996-06-26 | 1999-01-15 | 문정환 | 위상반전 마스크의 제조 방법 |
| KR100328448B1 (ko) * | 1999-12-29 | 2002-03-16 | 박종섭 | 반도체 소자의 위상반전 마스크 제조방법 |
| KR100790751B1 (ko) * | 2006-12-06 | 2008-01-02 | 삼성전기주식회사 | 수정판 제조방법 |
| KR102323615B1 (ko) * | 2020-01-23 | 2021-11-05 | 김용석 | 원 스텝 습식 에칭 기술을 이용한 oled 패널 제조용 파인 메탈 마스크 제조 방법 |
| TWI707195B (zh) * | 2020-02-14 | 2020-10-11 | 力晶積成電子製造股份有限公司 | 相位轉移光罩的製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4360586A (en) * | 1979-05-29 | 1982-11-23 | Massachusetts Institute Of Technology | Spatial period division exposing |
| DE3168688D1 (en) * | 1980-11-06 | 1985-03-14 | Toshiba Kk | Method for manufacturing a semiconductor device |
| JPS6195356A (ja) * | 1984-10-16 | 1986-05-14 | Mitsubishi Electric Corp | フオトマスクブランク |
| US4890309A (en) * | 1987-02-25 | 1989-12-26 | Massachusetts Institute Of Technology | Lithography mask with a π-phase shifting attenuator |
| JP2710967B2 (ja) * | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | 集積回路装置の製造方法 |
| JPH03211554A (ja) * | 1990-01-17 | 1991-09-17 | Fujitsu Ltd | 位相シフトマスクの製造方法 |
| JPH04127149A (ja) * | 1990-09-19 | 1992-04-28 | Hitachi Ltd | ホトマスク及びその製造方法 |
-
1991
- 1991-01-14 KR KR1019910000461A patent/KR0172816B1/ko not_active Expired - Fee Related
- 1991-12-24 TW TW080110098A patent/TW276352B/zh active
-
1992
- 1992-01-13 DE DE4200647A patent/DE4200647C2/de not_active Expired - Fee Related
- 1992-01-14 US US07/821,938 patent/US5597666A/en not_active Expired - Fee Related
- 1992-01-14 JP JP2333292A patent/JP2824817B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR920015428A (ko) | 1992-08-26 |
| DE4200647A1 (de) | 1992-07-23 |
| DE4200647C2 (de) | 1994-03-10 |
| US5597666A (en) | 1997-01-28 |
| KR0172816B1 (ko) | 1999-03-30 |
| TW276352B (Direct) | 1996-05-21 |
| JPH06138637A (ja) | 1994-05-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |