JP2793505B2 - 粒状磁気抵抗膜を形成する方法、粒状磁気抵抗センサ及び多層粒状磁気抵抗膜 - Google Patents
粒状磁気抵抗膜を形成する方法、粒状磁気抵抗センサ及び多層粒状磁気抵抗膜Info
- Publication number
- JP2793505B2 JP2793505B2 JP6134650A JP13465094A JP2793505B2 JP 2793505 B2 JP2793505 B2 JP 2793505B2 JP 6134650 A JP6134650 A JP 6134650A JP 13465094 A JP13465094 A JP 13465094A JP 2793505 B2 JP2793505 B2 JP 2793505B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ferromagnetic
- magnetic
- granular
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 20
- 230000005291 magnetic effect Effects 0.000 claims description 100
- 239000002245 particle Substances 0.000 claims description 75
- 230000005294 ferromagnetic effect Effects 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 35
- 239000003302 ferromagnetic material Substances 0.000 claims description 30
- 239000011159 matrix material Substances 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 7
- 239000010941 cobalt Substances 0.000 claims description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010948 rhodium Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 125000005842 heteroatom Chemical group 0.000 claims description 2
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 3
- 239000010931 gold Substances 0.000 claims 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- 229910001020 Au alloy Inorganic materials 0.000 claims 1
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 229910001252 Pd alloy Inorganic materials 0.000 claims 1
- 229910000629 Rh alloy Inorganic materials 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 229910001092 metal group alloy Inorganic materials 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000012811 non-conductive material Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 90
- 239000010408 film Substances 0.000 description 43
- 230000000694 effects Effects 0.000 description 17
- 230000005415 magnetization Effects 0.000 description 16
- 230000008021 deposition Effects 0.000 description 15
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 14
- 239000010409 thin film Substances 0.000 description 12
- 239000002356 single layer Substances 0.000 description 10
- 230000007423 decrease Effects 0.000 description 8
- 238000000137 annealing Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 230000005381 magnetic domain Effects 0.000 description 6
- 230000005330 Barkhausen effect Effects 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000002772 conduction electron Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000002386 leaching Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005191 phase separation Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910020637 Co-Cu Inorganic materials 0.000 description 1
- 102100024418 GTPase IMAP family member 8 Human genes 0.000 description 1
- 101100014658 Homo sapiens GIMAP8 gene Proteins 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 108020004566 Transfer RNA Proteins 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000005316 antiferromagnetic exchange Effects 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- RYTYSMSQNNBZDP-UHFFFAOYSA-N cobalt copper Chemical compound [Co].[Cu] RYTYSMSQNNBZDP-UHFFFAOYSA-N 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- SQWDWSANCUIJGW-UHFFFAOYSA-N cobalt silver Chemical compound [Co].[Ag] SQWDWSANCUIJGW-UHFFFAOYSA-N 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RTFJURXONWCRTE-UHFFFAOYSA-N iron nickel silver Chemical compound [Ni][Fe][Ag] RTFJURXONWCRTE-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 238000007885 magnetic separation Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 235000012771 pancakes Nutrition 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/007—Thin magnetic films, e.g. of one-domain structure ultrathin or granular films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
- H01F10/3231—Exchange coupling via one or more magnetisable ultrathin or granular films via a non-magnetic spacer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7965693A | 1993-06-18 | 1993-06-18 | |
| US079656 | 1993-06-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0758375A JPH0758375A (ja) | 1995-03-03 |
| JP2793505B2 true JP2793505B2 (ja) | 1998-09-03 |
Family
ID=22151959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6134650A Expired - Fee Related JP2793505B2 (ja) | 1993-06-18 | 1994-06-16 | 粒状磁気抵抗膜を形成する方法、粒状磁気抵抗センサ及び多層粒状磁気抵抗膜 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6016241A (enExample) |
| EP (1) | EP0629998A2 (enExample) |
| JP (1) | JP2793505B2 (enExample) |
| SG (1) | SG49605A1 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3669457B2 (ja) | 1996-03-19 | 2005-07-06 | 富士通株式会社 | 磁気記録媒体及びその製造方法 |
| US6214434B1 (en) * | 1997-09-02 | 2001-04-10 | Seagate Technology Llc | Isolated single-domain high-density magnetic recording media and method of manufacturing the media |
| JP3024612B2 (ja) * | 1997-10-23 | 2000-03-21 | 日本電気株式会社 | 磁気抵抗効果素子およびその製造方法 |
| JP4496320B2 (ja) * | 1999-03-25 | 2010-07-07 | 独立行政法人産業技術総合研究所 | 磁気抵抗効果薄膜 |
| JP2000339635A (ja) * | 1999-05-31 | 2000-12-08 | Toshiba Corp | 磁気ヘッド及び磁気記録再生装置 |
| US6610602B2 (en) | 1999-06-29 | 2003-08-26 | The Research Foundation Of State University Of New York | Magnetic field sensor and method of manufacturing same using a self-organizing polymer mask |
| JP2001076331A (ja) * | 1999-09-02 | 2001-03-23 | Toshiba Corp | 磁気記録媒体及び磁気記録再生装置 |
| US6590751B1 (en) * | 1999-09-30 | 2003-07-08 | Headway Technologies, Inc. | Anisotropic magnetoresistive (MR) sensor element with enhanced magnetoresistive (MR) coefficient |
| US6727105B1 (en) * | 2000-02-28 | 2004-04-27 | Hewlett-Packard Development Company, L.P. | Method of fabricating an MRAM device including spin dependent tunneling junction memory cells |
| JP2002150512A (ja) * | 2000-11-08 | 2002-05-24 | Sony Corp | 磁気抵抗効果素子および磁気抵抗効果型磁気ヘッド |
| US6794862B2 (en) * | 2001-05-08 | 2004-09-21 | Ramot At Tel-Aviv University Ltd. | Magnetic thin film sensor based on the extraordinary hall effect |
| JP2003198004A (ja) * | 2001-12-27 | 2003-07-11 | Fujitsu Ltd | 磁気抵抗効果素子 |
| US7964924B2 (en) * | 2002-05-24 | 2011-06-21 | National Institute Of Advanced Industrial Science And Technology | Magnetoresistance effect device and magnetism sensor using the same |
| US7538987B2 (en) * | 2003-07-03 | 2009-05-26 | University Of Alabama | CPP spin-valve element |
| JP4786331B2 (ja) | 2005-12-21 | 2011-10-05 | 株式会社東芝 | 磁気抵抗効果素子の製造方法 |
| JP4514721B2 (ja) * | 2006-02-09 | 2010-07-28 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置 |
| JP2007299880A (ja) * | 2006-04-28 | 2007-11-15 | Toshiba Corp | 磁気抵抗効果素子，および磁気抵抗効果素子の製造方法 |
| JP4550777B2 (ja) | 2006-07-07 | 2010-09-22 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置及び磁気メモリ |
| JP5044157B2 (ja) * | 2006-07-11 | 2012-10-10 | 株式会社東芝 | 磁気抵抗効果素子，磁気ヘッド，および磁気再生装置 |
| JP2008085220A (ja) * | 2006-09-28 | 2008-04-10 | Toshiba Corp | 磁気抵抗効果素子、磁気ヘッド、および磁気再生装置 |
| RU2316078C1 (ru) * | 2006-10-13 | 2008-01-27 | Институт физики металлов УрО РАН | Магниторезистивный датчик |
| RU2386174C2 (ru) * | 2006-12-28 | 2010-04-10 | Валерий Андреевич Базыленко | Способ защиты от подделок и контроля подлинности ценных изделий |
| JP4388093B2 (ja) | 2007-03-27 | 2009-12-24 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置 |
| JP5039007B2 (ja) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
| JP5039006B2 (ja) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
| JP2010080839A (ja) | 2008-09-29 | 2010-04-08 | Toshiba Corp | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置 |
| KR101684915B1 (ko) * | 2010-07-26 | 2016-12-12 | 삼성전자주식회사 | 자기 기억 소자 |
| JP5879854B2 (ja) * | 2011-09-16 | 2016-03-08 | 株式会社豊田中央研究所 | ナノヘテロ構造磁気抵抗素子、その製造方法、および磁気センサ |
| JP5850308B2 (ja) * | 2011-09-16 | 2016-02-03 | 株式会社豊田中央研究所 | ナノヘテロ構造軟磁性材料およびその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5043693A (en) | 1990-08-13 | 1991-08-27 | The United States Of America As Represented By The Secretary Of The Navy | Heterogeneous magnetoresistive layer |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58166510A (ja) * | 1982-03-29 | 1983-10-01 | Toshiba Corp | 磁気再生装置 |
| US4663242A (en) * | 1983-05-27 | 1987-05-05 | Olin Corporation | Method for producing a metal alloy strip |
| JPH07105006B2 (ja) * | 1985-11-05 | 1995-11-13 | ソニー株式会社 | 磁気抵抗効果型磁気ヘツド |
| DE3884756T2 (de) * | 1987-05-20 | 1994-05-05 | Matsushita Electric Ind Co Ltd | Verfahren zur herstellung eines dünnen films von basismetall und dessen verwendung. |
| DE3820475C1 (enExample) * | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
| US4914538A (en) * | 1988-08-18 | 1990-04-03 | International Business Machines Corporation | Magnetoresistive read transducer |
| JPH03155102A (ja) * | 1989-11-13 | 1991-07-03 | Mitsubishi Electric Corp | 高導電性磁性材料 |
| US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
| US5159513A (en) * | 1991-02-08 | 1992-10-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
| US5268043A (en) * | 1991-08-02 | 1993-12-07 | Olin Corporation | Magnetic sensor wire |
| EP0646277A1 (en) * | 1992-06-16 | 1995-04-05 | The Regents Of The University Of California | Giant magnetoresistant single film alloys |
-
1994
- 1994-06-08 SG SG1996000761A patent/SG49605A1/en unknown
- 1994-06-08 EP EP94108770A patent/EP0629998A2/en not_active Withdrawn
- 1994-06-16 JP JP6134650A patent/JP2793505B2/ja not_active Expired - Fee Related
-
1995
- 1995-05-22 US US08/445,479 patent/US6016241A/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5043693A (en) | 1990-08-13 | 1991-08-27 | The United States Of America As Represented By The Secretary Of The Navy | Heterogeneous magnetoresistive layer |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0629998A2 (en) | 1994-12-21 |
| EP0629998A3 (enExample) | 1995-01-04 |
| US6016241A (en) | 2000-01-18 |
| SG49605A1 (en) | 1998-06-15 |
| JPH0758375A (ja) | 1995-03-03 |
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