JP2766189B2 - シリコン結晶の改良成長方法 - Google Patents
シリコン結晶の改良成長方法Info
- Publication number
- JP2766189B2 JP2766189B2 JP6169322A JP16932294A JP2766189B2 JP 2766189 B2 JP2766189 B2 JP 2766189B2 JP 6169322 A JP6169322 A JP 6169322A JP 16932294 A JP16932294 A JP 16932294A JP 2766189 B2 JP2766189 B2 JP 2766189B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- arsenic
- silicon
- dopant
- oxidized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 54
- 229910052710 silicon Inorganic materials 0.000 title claims description 54
- 239000010703 silicon Substances 0.000 title claims description 54
- 238000002109 crystal growth method Methods 0.000 title 1
- 239000013078 crystal Substances 0.000 claims description 60
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 41
- 229910052785 arsenic Inorganic materials 0.000 claims description 40
- 239000002019 doping agent Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 11
- IKWTVSLWAPBBKU-UHFFFAOYSA-N a1010_sial Chemical compound O=[As]O[As]=O IKWTVSLWAPBBKU-UHFFFAOYSA-N 0.000 claims description 5
- 229910000413 arsenic oxide Inorganic materials 0.000 claims description 5
- 229960002594 arsenic trioxide Drugs 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LOPFACFYGZXPRZ-UHFFFAOYSA-N [Si].[As] Chemical compound [Si].[As] LOPFACFYGZXPRZ-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US95759 | 1987-09-11 | ||
| US08/095,759 US5408951A (en) | 1993-07-21 | 1993-07-21 | Method for growing silicon crystal |
| US095759 | 1993-07-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0782085A JPH0782085A (ja) | 1995-03-28 |
| JP2766189B2 true JP2766189B2 (ja) | 1998-06-18 |
Family
ID=22253466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6169322A Expired - Fee Related JP2766189B2 (ja) | 1993-07-21 | 1994-07-21 | シリコン結晶の改良成長方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5408951A (enExample) |
| EP (1) | EP0635588B1 (enExample) |
| JP (1) | JP2766189B2 (enExample) |
| KR (1) | KR0166999B1 (enExample) |
| CN (1) | CN1048044C (enExample) |
| DE (1) | DE69414652T2 (enExample) |
| MY (1) | MY111279A (enExample) |
| SG (1) | SG49058A1 (enExample) |
| TW (1) | TW250575B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000503621A (ja) * | 1996-03-26 | 2000-03-28 | エスイーエイチ・アメリカ，インコーポレイテッド | 結晶成長炉中で融解半導体をドーピングする方法 |
| JP3223873B2 (ja) * | 1997-12-24 | 2001-10-29 | 住友金属工業株式会社 | シリコンウエーハ及びその製造方法 |
| US6312517B1 (en) | 2000-05-11 | 2001-11-06 | Memc Electronic Materials, Inc. | Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method |
| WO2003027362A1 (en) * | 2001-09-28 | 2003-04-03 | Memc Electronic Materials, Inc. | Process for preparing an arsenic-doped single crystal silicon using a submersed dopant feeder |
| KR100439712B1 (ko) * | 2002-02-25 | 2004-07-12 | 네오세미테크 주식회사 | 비소원료 장입 장치 및 그를 이용한 갈륨-비소 단결정제조방법 |
| KR100486877B1 (ko) | 2002-10-15 | 2005-05-03 | 주식회사 실트론 | 저융점 도판트 주입관이 설치된 실리콘 단결정 성장 장치및 저융점 도판트 주입 방법 |
| DE10250822B4 (de) * | 2002-10-31 | 2006-09-28 | Siltronic Ag | Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium |
| JP4442892B2 (ja) * | 2004-03-29 | 2010-03-31 | コバレントマテリアル株式会社 | シリコン単結晶引上げ用砒素ドーパントの製造方法 |
| US7959732B1 (en) * | 2005-06-17 | 2011-06-14 | Saint-Gobain Ceramics & Plastics, Inc. | Apparatus and method for monitoring and controlling crystal growth |
| US7922817B2 (en) * | 2008-04-24 | 2011-04-12 | Memc Electronic Materials, Inc. | Method and device for feeding arsenic dopant into a silicon crystal growing apparatus |
| KR101106006B1 (ko) * | 2010-02-04 | 2012-01-18 | 주식회사 엘지실트론 | 도펀트 산화막 측정방법 |
| CN102174706A (zh) * | 2011-01-05 | 2011-09-07 | 刘文祥 | 半导序体 |
| US8749000B2 (en) * | 2012-02-15 | 2014-06-10 | Robert Bosch Gmbh | Pressure sensor with doped electrode |
| US10443148B2 (en) | 2015-03-10 | 2019-10-15 | Globalwafers Co., Ltd. | Methods for controlled doping of a melt including introducing liquid dopant below a surface of the melt |
| CN109628993B (zh) * | 2018-12-13 | 2020-07-17 | 徐州鑫晶半导体科技有限公司 | 制备砷掺杂剂的方法、应用氧化砷掺杂生长单晶硅的方法和单晶炉以及砷掺杂单晶硅 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2548046C3 (de) * | 1975-10-27 | 1982-12-02 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zum Ziehen einkristalliner Siliciumstäbe |
| US4134785A (en) * | 1977-04-13 | 1979-01-16 | Western Electric Company, Inc. | Real-time analysis and control of melt-chemistry in crystal growing operations |
| US4591409A (en) * | 1984-05-03 | 1986-05-27 | Texas Instruments Incorporated | Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth |
| CS252327B1 (cs) * | 1986-03-27 | 1987-08-13 | Petr Exnar | Skelni krystalická bezalkalická hmota s vysokým obsahem arsenu |
| JPH0218377A (ja) * | 1988-07-07 | 1990-01-22 | Nkk Corp | ドープ剤供給装置 |
| JPH02229789A (ja) * | 1989-03-01 | 1990-09-12 | Furukawa Co Ltd | 砒化シリコンの製造方法 |
-
1992
- 1992-07-20 SG SG1996005649A patent/SG49058A1/en unknown
-
1993
- 1993-07-21 US US08/095,759 patent/US5408951A/en not_active Expired - Lifetime
-
1994
- 1994-07-18 MY MYPI94001869A patent/MY111279A/en unknown
- 1994-07-20 EP EP94111268A patent/EP0635588B1/en not_active Expired - Lifetime
- 1994-07-20 DE DE69414652T patent/DE69414652T2/de not_active Expired - Fee Related
- 1994-07-21 JP JP6169322A patent/JP2766189B2/ja not_active Expired - Fee Related
- 1994-07-21 CN CN94108158A patent/CN1048044C/zh not_active Expired - Fee Related
- 1994-07-21 KR KR1019940017703A patent/KR0166999B1/ko not_active Expired - Fee Related
- 1994-08-22 TW TW083107679A patent/TW250575B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| SG49058A1 (en) | 1998-05-18 |
| KR0166999B1 (ko) | 1999-01-15 |
| US5408951A (en) | 1995-04-25 |
| JPH0782085A (ja) | 1995-03-28 |
| DE69414652D1 (de) | 1998-12-24 |
| CN1048044C (zh) | 2000-01-05 |
| EP0635588B1 (en) | 1998-11-18 |
| EP0635588A1 (en) | 1995-01-25 |
| DE69414652T2 (de) | 1999-04-08 |
| TW250575B (enExample) | 1995-07-01 |
| MY111279A (en) | 1999-10-30 |
| KR950003482A (ko) | 1995-02-17 |
| CN1103115A (zh) | 1995-05-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19980224 |
|
| LAPS | Cancellation because of no payment of annual fees |