KR0166999B1 - 실리콘 결정 성장방법 - Google Patents

실리콘 결정 성장방법 Download PDF

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Publication number
KR0166999B1
KR0166999B1 KR1019940017703A KR19940017703A KR0166999B1 KR 0166999 B1 KR0166999 B1 KR 0166999B1 KR 1019940017703 A KR1019940017703 A KR 1019940017703A KR 19940017703 A KR19940017703 A KR 19940017703A KR 0166999 B1 KR0166999 B1 KR 0166999B1
Authority
KR
South Korea
Prior art keywords
dopant
oxidized
silicon
arsenic
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940017703A
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English (en)
Korean (ko)
Other versions
KR950003482A (ko
Inventor
아끼테루 타미다
Original Assignee
죤 델루카
엠이엠씨 일레트로닉 머티리얼즈 인코포레이티드
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Publication date
Application filed by 죤 델루카, 엠이엠씨 일레트로닉 머티리얼즈 인코포레이티드 filed Critical 죤 델루카
Publication of KR950003482A publication Critical patent/KR950003482A/ko
Application granted granted Critical
Publication of KR0166999B1 publication Critical patent/KR0166999B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1019940017703A 1993-07-21 1994-07-21 실리콘 결정 성장방법 Expired - Fee Related KR0166999B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/095,759 US5408951A (en) 1993-07-21 1993-07-21 Method for growing silicon crystal
US8/095,759 1993-07-21

Publications (2)

Publication Number Publication Date
KR950003482A KR950003482A (ko) 1995-02-17
KR0166999B1 true KR0166999B1 (ko) 1999-01-15

Family

ID=22253466

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940017703A Expired - Fee Related KR0166999B1 (ko) 1993-07-21 1994-07-21 실리콘 결정 성장방법

Country Status (9)

Country Link
US (1) US5408951A (enExample)
EP (1) EP0635588B1 (enExample)
JP (1) JP2766189B2 (enExample)
KR (1) KR0166999B1 (enExample)
CN (1) CN1048044C (enExample)
DE (1) DE69414652T2 (enExample)
MY (1) MY111279A (enExample)
SG (1) SG49058A1 (enExample)
TW (1) TW250575B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100439712B1 (ko) * 2002-02-25 2004-07-12 네오세미테크 주식회사 비소원료 장입 장치 및 그를 이용한 갈륨-비소 단결정제조방법

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000503621A (ja) * 1996-03-26 2000-03-28 エスイーエイチ・アメリカ，インコーポレイテッド 結晶成長炉中で融解半導体をドーピングする方法
JP3223873B2 (ja) * 1997-12-24 2001-10-29 住友金属工業株式会社 シリコンウエーハ及びその製造方法
US6312517B1 (en) 2000-05-11 2001-11-06 Memc Electronic Materials, Inc. Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method
WO2003027362A1 (en) * 2001-09-28 2003-04-03 Memc Electronic Materials, Inc. Process for preparing an arsenic-doped single crystal silicon using a submersed dopant feeder
KR100486877B1 (ko) 2002-10-15 2005-05-03 주식회사 실트론 저융점 도판트 주입관이 설치된 실리콘 단결정 성장 장치및 저융점 도판트 주입 방법
DE10250822B4 (de) * 2002-10-31 2006-09-28 Siltronic Ag Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium
JP4442892B2 (ja) * 2004-03-29 2010-03-31 コバレントマテリアル株式会社 シリコン単結晶引上げ用砒素ドーパントの製造方法
US7959732B1 (en) * 2005-06-17 2011-06-14 Saint-Gobain Ceramics & Plastics, Inc. Apparatus and method for monitoring and controlling crystal growth
US7922817B2 (en) * 2008-04-24 2011-04-12 Memc Electronic Materials, Inc. Method and device for feeding arsenic dopant into a silicon crystal growing apparatus
KR101106006B1 (ko) * 2010-02-04 2012-01-18 주식회사 엘지실트론 도펀트 산화막 측정방법
CN102174706A (zh) * 2011-01-05 2011-09-07 刘文祥 半导序体
WO2013123231A1 (en) * 2012-02-15 2013-08-22 Robert Bosch Gmbh Pressure sensor with doped electrode
WO2016142893A1 (en) * 2015-03-10 2016-09-15 Sunedison Semiconductor Limited Liquid doping systems and methods for controlled doping of a melt
CN109628993B (zh) * 2018-12-13 2020-07-17 徐州鑫晶半导体科技有限公司 制备砷掺杂剂的方法、应用氧化砷掺杂生长单晶硅的方法和单晶炉以及砷掺杂单晶硅

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2548046C3 (de) * 1975-10-27 1982-12-02 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum Ziehen einkristalliner Siliciumstäbe
US4134785A (en) * 1977-04-13 1979-01-16 Western Electric Company, Inc. Real-time analysis and control of melt-chemistry in crystal growing operations
US4591409A (en) * 1984-05-03 1986-05-27 Texas Instruments Incorporated Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth
CS252327B1 (cs) * 1986-03-27 1987-08-13 Petr Exnar Skelni krystalická bezalkalická hmota s vysokým obsahem arsenu
JPH0218377A (ja) * 1988-07-07 1990-01-22 Nkk Corp ドープ剤供給装置
JPH02229789A (ja) * 1989-03-01 1990-09-12 Furukawa Co Ltd 砒化シリコンの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100439712B1 (ko) * 2002-02-25 2004-07-12 네오세미테크 주식회사 비소원료 장입 장치 및 그를 이용한 갈륨-비소 단결정제조방법

Also Published As

Publication number Publication date
CN1103115A (zh) 1995-05-31
US5408951A (en) 1995-04-25
JP2766189B2 (ja) 1998-06-18
DE69414652D1 (de) 1998-12-24
EP0635588B1 (en) 1998-11-18
EP0635588A1 (en) 1995-01-25
KR950003482A (ko) 1995-02-17
SG49058A1 (en) 1998-05-18
MY111279A (en) 1999-10-30
CN1048044C (zh) 2000-01-05
JPH0782085A (ja) 1995-03-28
DE69414652T2 (de) 1999-04-08
TW250575B (enExample) 1995-07-01

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