JP2572864B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JP2572864B2
JP2572864B2 JP2023898A JP2389890A JP2572864B2 JP 2572864 B2 JP2572864 B2 JP 2572864B2 JP 2023898 A JP2023898 A JP 2023898A JP 2389890 A JP2389890 A JP 2389890A JP 2572864 B2 JP2572864 B2 JP 2572864B2
Authority
JP
Japan
Prior art keywords
layer
conductive layer
insulating layer
impurity diffusion
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2023898A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03227566A (ja
Inventor
守昭 赤澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2023898A priority Critical patent/JP2572864B2/ja
Priority to KR91000945A priority patent/KR0124143B1/ko
Priority to DE4103105A priority patent/DE4103105A1/de
Publication of JPH03227566A publication Critical patent/JPH03227566A/ja
Priority to US07/895,158 priority patent/US5218218A/en
Priority to US08/017,904 priority patent/US5302541A/en
Application granted granted Critical
Publication of JP2572864B2 publication Critical patent/JP2572864B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2023898A 1990-02-01 1990-02-01 半導体装置の製造方法 Expired - Fee Related JP2572864B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2023898A JP2572864B2 (ja) 1990-02-01 1990-02-01 半導体装置の製造方法
KR91000945A KR0124143B1 (en) 1990-02-01 1991-01-21 Semiconductor memory device
DE4103105A DE4103105A1 (de) 1990-02-01 1991-02-01 Halbleitervorrichtung und verfahren zum herstellen einer solchen
US07/895,158 US5218218A (en) 1990-02-01 1992-06-05 Semiconductor device and manufacturing method thereof
US08/017,904 US5302541A (en) 1990-02-01 1993-02-16 Manufacturing method of a semiconductor device with a trench capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023898A JP2572864B2 (ja) 1990-02-01 1990-02-01 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH03227566A JPH03227566A (ja) 1991-10-08
JP2572864B2 true JP2572864B2 (ja) 1997-01-16

Family

ID=12123279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023898A Expired - Fee Related JP2572864B2 (ja) 1990-02-01 1990-02-01 半導体装置の製造方法

Country Status (3)

Country Link
JP (1) JP2572864B2 (enExample)
KR (1) KR0124143B1 (enExample)
DE (1) DE4103105A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW399287B (en) * 1998-12-19 2000-07-21 Siemens Plc Structure of bottle-shaped deep trench and its manufacturing method
RU2169207C2 (ru) * 1999-04-09 2001-06-20 Московский государственный институт электроники и математики (технический университет) Способ получения металлодиэлектрических тонких пленок
US6066527A (en) * 1999-07-26 2000-05-23 Infineon Technologies North America Corp. Buried strap poly etch back (BSPE) process
DE10011672A1 (de) * 2000-03-10 2001-09-20 Infineon Technologies Ag Integrierte DRAM-Speicherzelle sowie DRAM-Speicher
DE10233760B4 (de) * 2002-07-25 2007-05-03 Infineon Technologies Ag SRAM-Speicherzelle mit Älzgräben und deren Array-Anordnung
CN120379244A (zh) * 2024-01-25 2025-07-25 华为技术有限公司 存储阵列及其制备方法、存储器、电子设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4713678A (en) * 1984-12-07 1987-12-15 Texas Instruments Incorporated dRAM cell and method
JPH0191449A (ja) * 1987-10-02 1989-04-11 Matsushita Electric Ind Co Ltd 半導体メモリ装置
JP2606857B2 (ja) * 1987-12-10 1997-05-07 株式会社日立製作所 半導体記憶装置の製造方法
JPH0220061A (ja) * 1988-07-08 1990-01-23 Oki Electric Ind Co Ltd 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
JPH03227566A (ja) 1991-10-08
DE4103105A1 (de) 1991-08-08
KR0124143B1 (en) 1997-11-25
DE4103105C2 (enExample) 1993-05-13

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