JP2554572Y2 - 単結晶製造装置 - Google Patents

単結晶製造装置

Info

Publication number
JP2554572Y2
JP2554572Y2 JP1991000410U JP41091U JP2554572Y2 JP 2554572 Y2 JP2554572 Y2 JP 2554572Y2 JP 1991000410 U JP1991000410 U JP 1991000410U JP 41091 U JP41091 U JP 41091U JP 2554572 Y2 JP2554572 Y2 JP 2554572Y2
Authority
JP
Japan
Prior art keywords
raw material
single crystal
ferrite
material rod
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1991000410U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0497864U (enExample
Inventor
信宏 林
世一 安彦
洋一 片桐
朋美 小村
晃一 矢羽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP1991000410U priority Critical patent/JP2554572Y2/ja
Publication of JPH0497864U publication Critical patent/JPH0497864U/ja
Application granted granted Critical
Publication of JP2554572Y2 publication Critical patent/JP2554572Y2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Soft Magnetic Materials (AREA)
JP1991000410U 1991-01-10 1991-01-10 単結晶製造装置 Expired - Fee Related JP2554572Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1991000410U JP2554572Y2 (ja) 1991-01-10 1991-01-10 単結晶製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1991000410U JP2554572Y2 (ja) 1991-01-10 1991-01-10 単結晶製造装置

Publications (2)

Publication Number Publication Date
JPH0497864U JPH0497864U (enExample) 1992-08-25
JP2554572Y2 true JP2554572Y2 (ja) 1997-11-17

Family

ID=31727135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1991000410U Expired - Fee Related JP2554572Y2 (ja) 1991-01-10 1991-01-10 単結晶製造装置

Country Status (1)

Country Link
JP (1) JP2554572Y2 (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2638687B2 (ja) 1991-01-10 1997-08-06 アルプス電気株式会社 単結晶製造装置
JP2543828Y2 (ja) 1991-01-18 1997-08-13 アルプス電気株式会社 単結晶製造装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567598A (en) * 1978-11-16 1980-05-21 Ricoh Co Ltd Single crystal growing method
JPS58208194A (ja) * 1982-05-28 1983-12-03 Fujitsu Ltd 単結晶成長の種結晶保持方法
JPS63156090A (ja) * 1986-12-19 1988-06-29 Sanyo Electric Co Ltd ブリツジマン法による単結晶製造装置
JPH02196084A (ja) * 1989-01-23 1990-08-02 Mitsubishi Electric Corp 単結晶引上装置用種結晶の保持方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2638687B2 (ja) 1991-01-10 1997-08-06 アルプス電気株式会社 単結晶製造装置
JP2543828Y2 (ja) 1991-01-18 1997-08-13 アルプス電気株式会社 単結晶製造装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
高須新一郎著、「結晶育成基礎技術」、財団法人東京大学出版会、 （１９８６年）、Ｐ．１５４〜１５５

Also Published As

Publication number Publication date
JPH0497864U (enExample) 1992-08-25

Similar Documents

Publication Publication Date Title
JP2012515698A5 (enExample)
WO2006054610A1 (ja) 結晶製造装置
US6607594B2 (en) Method for producing silicon single crystal
JP2554572Y2 (ja) 単結晶製造装置
JP2543828Y2 (ja) 単結晶製造装置
JP2533817Y2 (ja) 単結晶製造装置
JP2638687B2 (ja) 単結晶製造装置
JP2742469B2 (ja) 単結晶製造装置
JPS62167284A (ja) ブリツジマン法による単結晶の製造方法及び装置
JP2010248003A (ja) ＳｉＣ単結晶の製造方法
JP2803912B2 (ja) 単結晶製造装置
CN221854854U (zh) 一种单晶生长用坩埚
JP3039724B2 (ja) 単結晶製造装置
JP2592244B2 (ja) 均一結晶の育成装置
JPS623406Y2 (enExample)
JPS6136192A (ja) 単結晶製造用るつぼ
JPH10279399A (ja) 単結晶製造方法
JPS5815499Y2 (ja) ルツボ支持体の構造
JPS61155286A (ja) 単結晶育成装置
JPH02283691A (ja) 大形フェライト単結晶の製造方法
JPS61247682A (ja) 単結晶育成装置
JP3208603B2 (ja) 単結晶の作製方法
JPS5852293Y2 (ja) フエライト単結晶の製造装置
KR19990083018A (ko) 실리콘 단결정 제조 방법
JPS63285183A (ja) 化合物半導体単結晶の製造方法

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 19970708

LAPS Cancellation because of no payment of annual fees