JP2549787Y2 - Package for storing semiconductor elements - Google Patents
Package for storing semiconductor elementsInfo
- Publication number
- JP2549787Y2 JP2549787Y2 JP6665991U JP6665991U JP2549787Y2 JP 2549787 Y2 JP2549787 Y2 JP 2549787Y2 JP 6665991 U JP6665991 U JP 6665991U JP 6665991 U JP6665991 U JP 6665991U JP 2549787 Y2 JP2549787 Y2 JP 2549787Y2
- Authority
- JP
- Japan
- Prior art keywords
- external lead
- insulating base
- lead terminal
- lead terminals
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本考案は内部に半導体素子を収容
する半導体素子収納用パッケージに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing a semiconductor device therein.
【０００２】[0002]
【従来の技術】従来、半導体素子、特に半導体集積回路
素子を収容するための半導体素子収納用パッケージは図
３に示すようにアルミナセラミックス等の電気絶縁材料
から成り、その上面にモリブデン、タングステン、マン
ガン等の高融点金属粉末から成るメタライズ金属層１２
を有する絶縁基体１１と、半導体素子を外部電気回路に
電気的に接続するために前記メタライズ金属層１２に銀
ロウ等のロウ材１４を介しロウ付けされたコバール金属
（Ｆｅ−Ｎｉ−Ｃｏ合金）や４２アロイ（Ｆｅ−Ｎｉ合
金）等から成る外部リード端子１３と蓋体１５とから構
成されており、絶縁基体１１と蓋体１５とから成る絶縁
容器内部に半導体素子１６を収容し、容器を気密に封止
することによって半導体装置となる。2. Description of the Related Art Conventionally, a package for accommodating a semiconductor element, particularly a semiconductor integrated circuit element, is made of an electrically insulating material such as alumina ceramics as shown in FIG. Metal layer 12 made of high melting point metal powder such as
And a Kovar metal (Fe-Ni-Co alloy) brazed to the metallized metal layer 12 via a brazing material 14 such as silver braze in order to electrically connect the semiconductor element to an external electric circuit. The semiconductor element 16 is housed in an insulating container including the insulating base 11 and the lid 15, and the external device includes the external lead terminal 13 made of an aluminum or 42 alloy (Fe—Ni alloy) or the like. A semiconductor device is obtained by hermetically sealing.
【０００３】かかる従来の半導体素子収納用パッケージ
は絶縁基体１１に設けたメタライズ金属層１２の各々に
外部リード端子１３をロウ付けする際、そのロウ付けの
作業性を容易とするために、また外部リード端子１３の
外表面に耐蝕性に優れた金属層をメッキにより層着する
際、その層着の作業性を容易とするために、更には半導
体素子収納用パッケージを輸送する際、外部リード端子
１３に外力が印加され、該外力によって外部リード端子
１３が変形するのを防止するために、通常、各外部リー
ド端子１３は図４に示す如く、その一端が環状をなす帯
状の金属部材１７に共通に連結されており、これによっ
て外部リード端子１３は絶縁基体１１へのロウ付け及び
外部リード端子１３の外表面へのメッキ金属層の層着の
作業性が大幅に向上し、且つ輸送時の変形が有効に防止
されるようになっている。In the conventional package for accommodating a semiconductor element, when the external lead terminals 13 are brazed to each of the metallized metal layers 12 provided on the insulating substrate 11, the workability of the brazing is facilitated. When a metal layer having excellent corrosion resistance is deposited on the outer surface of the lead terminal 13 by plating, in order to facilitate the workability of the deposition, and further, when transporting the package for housing the semiconductor element, the external lead terminal is used. In order to prevent an external force from being applied to the external lead terminal 13 and deforming the external lead terminal 13 due to the external force, each of the external lead terminals 13 is usually provided with a band-shaped metal member 17 having one end formed in an annular shape as shown in FIG. Since the external lead terminals 13 are connected in common, the workability of brazing the external lead terminals 13 to the insulating base 11 and attaching a plated metal layer to the outer surface of the external lead terminals 13 is greatly improved. And, and deformation during transport is adapted to be effectively prevented.
【０００４】尚、前記外部リード端子１３はコバール金
属等のインゴット（現）を従来周知の圧延加工法により
薄板状となすとともに金属打ち抜き加工法により所定形
状に打ち抜くことによって形成され、また外部リード端
子１３の一端に連結される金属部材１７も外部リード端
子１３の形成と同時に打ち抜き形成される。The external lead terminal 13 is formed by forming an ingot (current) of Kovar metal or the like into a thin plate by a conventionally known rolling method and punching it into a predetermined shape by a metal punching method. The metal member 17 connected to one end of the external lead terminal 13 is also punched and formed simultaneously with the formation of the external lead terminal 13.
【０００５】[0005]
【考案が解決しようとする課題】しかしながら、近時、
半導体素子収納用パッケージはその内部に収容する半導
体素子が高密度化、高集積化し、パッケージに使用され
る外部リード端子もその数が極めて多いものとなり、個
々の外部リード端子はその線幅が狭く、厚みの薄い機械
的強度の弱いものとなってきている。そのため外部リー
ド端子を絶縁基体に設けたメタライズ金属層にロウ付け
した後、外部リード端子に絶縁基体の重みが印加される
と該外部リード端子は容易に変形してしまい、その結
果、外部リード端子を外部の所定電気回路に正確、かつ
確実に接続することができないという欠点を有してい
た。[Problems to be solved by the invention] However, recently,
In semiconductor device storage packages, the density of semiconductor elements housed in the package has become higher and higher, and the number of external lead terminals used in the package has become extremely large. Each external lead terminal has a narrow line width. However, it is becoming thinner and weaker in mechanical strength. Therefore, after the external lead terminal is brazed to the metallized metal layer provided on the insulating base, if the weight of the insulating base is applied to the external lead terminal, the external lead terminal is easily deformed. As a result, the external lead terminal is deformed. Cannot be accurately and reliably connected to an external predetermined electric circuit.
【０００６】[0006]
【課題を解決するための手段】本考案は、上面に半導体
素子が搭載される搭載部及び前記半導体素子の各電極が
電気的に接続される複数個の金属層を設けてなる絶縁基
体と、複数個の外部リード端子の各々の一端を環状をな
す帯状金属部材の内辺に共通に連結させてなるリードフ
レームとから成り、前記絶縁基体上面に設けた金属層
に、各外部リード端子の他端をロウ付けしてなる半導体
素子収納用パッケージであって、前記外部リード端子が
共通に連結されている帯状金属部材の内辺に一端が絶縁
基体の下面に当接する支持部材を設け、該支持部材と前
記外部リード端子とで絶縁基体を挟持したことを特徴と
するものである。According to the present invention, there is provided an insulating base comprising a mounting portion on which a semiconductor element is mounted and a plurality of metal layers to which electrodes of the semiconductor element are electrically connected. A lead frame in which one end of each of the plurality of external lead terminals is commonly connected to the inner side of an annular band-shaped metal member. A semiconductor element storage package having an end brazed, wherein a support member having one end in contact with a lower surface of an insulating base is provided on an inner side of a band-shaped metal member to which the external lead terminals are commonly connected. An insulating substrate is sandwiched between the member and the external lead terminal.
【０００７】[0007]
【実施例】次に本考案を添付図面に基づき詳細に説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the accompanying drawings.
【０００８】図１は本考案の半導体素子収納用パッケー
ジに使用されるリードフレームの一実施例を示し、全体
として１で示されるリ−ドフレームは複数個の外部リー
ド端子２と環状をなす帯状の金属部材３とから構成され
ている。FIG. 1 shows an embodiment of a lead frame used in the package for accommodating a semiconductor device according to the present invention. The lead frame indicated by the reference numeral 1 is a belt-like ring formed with a plurality of external lead terminals 2 as a whole. Metal member 3.
【０００９】前記外部リード端子２は半導体素子収納用
パッケージの絶縁容器内に収容される半導体素子を外部
の電気回路に電気的に接続する作用を為し、その一端側
が絶縁容器を構成する絶縁基体の上面に形成した半導体
素子の電極が接続されるメタライズ金属層に銀ロウ等の
ロウ材を介してロウ付けされる。The external lead terminal 2 functions to electrically connect the semiconductor element housed in the insulating container of the semiconductor element housing package to an external electric circuit, and one end of the external lead terminal constitutes the insulating container. Is formed on the metallized metal layer to which the electrode of the semiconductor element formed on the upper surface is connected, via a brazing material such as silver brazing.
【００１０】また前記複数個の外部リード端子２は、そ
の他端側が環状をなす帯状の金属部材３の内辺に共通に
連結されており、該帯状の金属部材３は外部リード端子
２の各々の位置を規制し、外部リード端子２の一端を絶
縁基体のメタライズ金属層にロウ付けする際の作業性及
び外部リード端子２の外表面に耐蝕性に優れた金属をメ
ッキにより層着する際の作業性を向上させる作用を為
す。The plurality of external lead terminals 2 are commonly connected to the inner side of a band-shaped metal member 3 whose other end forms an annular shape, and the band-shaped metal member 3 is connected to each of the external lead terminals 2. Workability when brazing one end of the external lead terminal 2 to the metallized metal layer of the insulating substrate and work for plating a metal with excellent corrosion resistance on the outer surface of the external lead terminal 2 by plating by regulating the position. It acts to improve the performance.
【００１１】尚、前記外部リード端子２の帯状金属部材
３への連結は隣接する外部リード端子２の間隔が絶縁基
体に設けたメタライズ金属層の間隔に対応したものとな
っている。The connection of the external lead terminals 2 to the strip-shaped metal member 3 is such that the distance between adjacent external lead terminals 2 corresponds to the distance between the metallized metal layers provided on the insulating base.
【００１２】また前記外部リード端子２及び帯状金属部
材３はいずれもコバール金属（Ｆｅ−Ｎｉ Ｃｏ合金）
や４２アロイ（Ｆｅ−Ｎｉ合金）等の金属から成り、コ
バール金属等のインゴット（塊）を圧延加工法により薄
板状となすとともに金属打ち抜き加工法により所定形状
に打ち抜くことによって一度に形成される。The external lead terminal 2 and the strip-shaped metal member 3 are both made of Kovar metal (Fe-NiCo alloy).
And a metal such as 42 alloy (Fe-Ni alloy), and is formed at a time by forming an ingot (lump) of Kovar metal or the like into a thin plate by a rolling process and punching it into a predetermined shape by a metal punching process.
【００１３】更に前記複数個の外部リード端子２が共通
に連結されている金属部材３は、その内辺に一端が絶縁
基体の下面に当接する支持部材４が設けられており、該
支持部材４は外部リード端子２とで絶縁基体を挟持し、
絶縁基体の重みが外部リード端子２に加わって外部リー
ド端子２に変形をきたすのを有効に防止するとともに外
部リード端子２を絶縁基体の上面に設けたメタライズ金
属層にロウ付けする際、外部リード端子２の位置合わせ
の作業性を容易とする作用をなす。Further, the metal member 3 to which the plurality of external lead terminals 2 are connected in common is provided with a supporting member 4 whose one end is in contact with the lower surface of the insulating base. Holds the insulating base between the external lead terminal 2 and
This effectively prevents the weight of the insulating base from being applied to the external lead terminals 2 to cause deformation of the external lead terminals 2 and, when the external lead terminals 2 are brazed to the metallized metal layer provided on the upper surface of the insulating base, the external leads This has the effect of facilitating the workability of the positioning of the terminal 2.
【００１４】前記支持部材４は、金属板に打ち抜き加工
法を施すことによって金属部材３を形成する際に同時に
金属部材３の内辺に四角形状に形成され、半導体素子が
搭載される絶縁基体の下面に当接し、絶縁基体を支持し
易い用にプレス成型法等により所定形状に成型されてい
る。The support member 4 is formed in a rectangular shape on the inner side of the metal member 3 at the same time as the metal member 3 is formed by punching a metal plate. It is formed into a predetermined shape by a press molding method or the like so as to be in contact with the lower surface and to easily support the insulating base.
【００１５】次に本考案の半導体素子収納用パッケージ
の製造方法について図２に示す例で説明する。Next, a method of manufacturing the semiconductor device housing package of the present invention will be described with reference to an example shown in FIG.
【００１６】まず図２に示すような上面に半導体素子が
搭載される絶縁基体５と、多数の外部リード端子２の各
々の一端が環状をなす帯状金属部材３の内辺に共通に連
結されてなるリードフレーム１を準備する。First, an insulating base 5 on which a semiconductor element is mounted on the upper surface as shown in FIG. 2 and one end of each of a large number of external lead terminals 2 are commonly connected to an inner side of an annular band-shaped metal member 3. A lead frame 1 is prepared.
【００１７】尚、前記環状をなす帯状金属部材３の内辺
には四角形状の支持部材４が同時に形成されている。A rectangular supporting member 4 is simultaneously formed on the inner side of the annular band-shaped metal member 3.
【００１８】前記絶縁基体５はその上面に複数個のメタ
ライズ金属層６を有しており、該メタライズ金属層６を
有する絶縁基体５は表面に金属ペーストを所定パターン
に印刷塗布した未焼成セラミツクシート（グリーンシー
ト）を複数枚積層するとともに還元雰囲気中（Ｈ2 −Ｎ
2 ガス中）、約１４００〜１６００℃の温度で焼成する
ことによって形成される。The insulating substrate 5 has a plurality of metallized metal layers 6 on its upper surface. The insulating substrate 5 having the metallized metal layers 6 is a green ceramic sheet having a surface coated with a metal paste by printing in a predetermined pattern. (Green sheets) in a reducing atmosphere (H 2 -N
2 ), and formed by firing at a temperature of about 1400 to 1600 ° C.
【００１９】尚、前記未焼成セラミツクシートはアルミ
ナ（Ａｌ2 ０3 ）、シリカ（ＳｉＯ2 ）等のセラミツタ
原料粉末に適当な溶剤、溶媒を添加混合して泥漿物を作
り、これを従来周知のドクターブレード法によりシート
状となすことによって形成される。The unsintered ceramic sheet is formed into a slurry by adding an appropriate solvent and a solvent to ceramizer raw material powder such as alumina (Al 2 O 3 ), silica (SiO 2 ), etc. It is formed by forming a sheet by a doctor blade method.
【００２０】また金属ペーストはタングステン、モリブ
デン、マンガン等の高融点金属粉末に適当な溶剤、溶媒
を添加混合することによって作成され、未焼成セラミッ
クシート表面に従来周知のスクリーン印刷等の厚膜手法
によって印刷塗布される。The metal paste is prepared by adding a suitable solvent and a solvent to a high melting point metal powder such as tungsten, molybdenum, manganese or the like, and mixing the powder with a conventionally known thick film method such as screen printing on the surface of the unfired ceramic sheet. Print applied.
【００２１】更に前記環状をなす帯状金属部材３の内辺
に多数の外部リード端子２を共通に連結させるとともに
絶縁基体５の下面に当接する四角形状の支持部材４を設
けたリ−ドフレーム１はコバール金属や４２アロイ等の
金属から成り、コバール金属等のインゴット（塊）に従
来周知の圧延加工法及び打ち抜き加工法等を施すことに
よって所定厚み、所定形状に形成される。Further, a lead frame 1 in which a large number of external lead terminals 2 are commonly connected to the inner side of the annular band-shaped metal member 3 and a quadrangular support member 4 which is in contact with the lower surface of the insulating base 5 is provided. Is formed of a metal such as Kovar metal or 42 alloy, and is formed to a predetermined thickness and a predetermined shape by subjecting an ingot (lumps) of Kovar metal or the like to a conventionally known rolling method and punching method.
【００２２】次に前記メタライズ金属層６を有する絶縁
基体５と、外部リード端子２及び支持部材４を有するリ
ードフレーム１とをカーボンから成る治具（不図示）内
に支持部材４が絶縁基体５の下面に当接し、各外部リー
ド端子２の一端が絶縁基体５の上面に設けたメタライズ
金属層６の露出部分に銀ロウ材７を介して載置するよう
にセットする。Next, the insulating member 5 having the metallized metal layer 6 and the lead frame 1 having the external lead terminals 2 and the supporting member 4 are placed in a jig (not shown) made of carbon. , And one end of each external lead terminal 2 is set via an silver brazing material 7 on an exposed portion of the metallized metal layer 6 provided on the upper surface of the insulating base 5.
【００２３】この場合、各外部リード端子２はその一端
が金属部材３に共通に連結されており、位置が規制され
ていることからすべての外部リード端子２は絶縁基体５
に設けたメタライズ金属層６に一度に、且つ容易に位置
合わせすることができ、同時に絶縁基体５を、該絶縁基
体５の下面に当接する支持部材４と絶縁基体５上面のメ
タライズ金属層５に載置される外部リード端子２とで挟
持することから外部リード端子２の変移が有効に防止で
き、外部リード端子２のメタライズ金属層６への位置合
わせが信頼性の高いものとなすことができる。In this case, one end of each of the external lead terminals 2 is commonly connected to the metal member 3 and the position is regulated.
Can be easily and simultaneously aligned with the metallized metal layer 6 provided at the same time, and at the same time, the insulating base 5 is connected to the supporting member 4 abutting on the lower surface of the insulating base 5 and the metallized metal layer 5 on the upper surface of the insulating base 5. Since the external lead terminals 2 are sandwiched between the external lead terminals 2 to be mounted, displacement of the external lead terminals 2 can be effectively prevented, and the positioning of the external lead terminals 2 to the metallized metal layer 6 can be made highly reliable. .
【００２４】そして次に前記位置合わせされた絶縁基体
５及びリードフレーム１を約９００℃の温度に加熱され
た炉内に通し、ロウ材７を加熱溶融させことによって外
部リード端子２をメタライズ金属属６にセウ付けする。Then, the insulating substrate 5 and the lead frame 1 which have been aligned are passed through a furnace heated to a temperature of about 900 ° C., and the brazing material 7 is heated and melted so that the external lead terminals 2 are metallized metal. Sew on 6.
【００２５】そして最後にメタライズ金属層６にロウ付
けされた外部リード端子２の外表面に電解メッキ方法に
よりニッケル（Ｎｉ）や金（Ａｕ）等の耐蝕性に優れた
金属を層着させ、これによって製品としての半導体素子
収納用パッケージが完成する。Finally, a metal having excellent corrosion resistance such as nickel (Ni) or gold (Au) is deposited on the outer surface of the external lead terminal 2 brazed to the metallized metal layer 6 by electrolytic plating. As a result, a semiconductor element storage package as a product is completed.
【００２６】この場合、外部リード端子２の各々はその
一端が金属部材３に共通に連結されていることから電解
メッキのための電極を金属部材３に接続するだけですべ
ての外部リード端子２にメッキ用の電界を共通に印加す
ることができ、電解メッキの作業性が極めて容易とな
る。In this case, since one end of each of the external lead terminals 2 is commonly connected to the metal member 3, only the electrode for electrolytic plating is connected to the metal member 3 so that all the external lead terminals 2 are connected to the metal member 3. An electric field for plating can be applied in common, and workability of electrolytic plating becomes extremely easy.
【００２７】また完成された半導体素子収納用パッケー
ジは、金属部材３に設けられた支持部材４が絶縁基体５
の下面に当接し、絶縁基体５を支持するため絶縁基体５
の重みが外部リード端子２に印加されることは一切な
く、その結果、外部リード端子２の変形が有効に防止さ
れて該外部リード端子２を所定の外部電気回路に正確、
且つ確実に接続することも可能となる。In the completed package for housing a semiconductor element, the supporting member 4 provided on the metal member 3 is
The insulating base 5 is in contact with the lower surface of the
Is not applied to the external lead terminal 2 at all. As a result, the deformation of the external lead terminal 2 is effectively prevented, and the external lead terminal 2 can be accurately connected to a predetermined external electric circuit.
In addition, it is possible to connect securely.
【００２８】尚、本考案は上述の実施例に限定されるも
のではなく、本考案の要旨を逸脱しない範囲であれば種
々の変更は可能であり、例えば、リードフレーム１の環
状をなす帯状金属部材３の主面に金属や樹脂等から成る
補強部材を直接取着させておけば、帯状金属部材３の機
械的強度が補強部材により大幅に改善され、半導体素子
収納用パッケージを輸送する際等において帯状金属部材
３に外力が印加されたとしても帯状金属部材３に変形が
生じることはなく、その結果、帯状金属部材３に連結さ
れている外部リード端子２も変形を生じるのが皆無とな
って、該外部リード端子２を所定の外部電気回路に正
確、且つ確実に接続することが可能となる。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. If a reinforcing member made of metal, resin, or the like is directly attached to the main surface of the member 3, the mechanical strength of the band-shaped metal member 3 is greatly improved by the reinforcing member, so that the semiconductor device housing package can be transported. In the above, even if an external force is applied to the band-shaped metal member 3, the band-shaped metal member 3 is not deformed. As a result, the external lead terminals 2 connected to the band-shaped metal member 3 are not deformed at all. Thus, the external lead terminal 2 can be accurately and reliably connected to a predetermined external electric circuit.
【００２９】[0029]
【考案の効果】本考案の半導体素子収納用パッケージに
よれば、各外部リード端子はその一端が環状をなす帯状
金属部材の内辺に共通に連結しており、その位置が帯状
金属部材によって規制されていることから、半導体素子
を収容するための絶録容器を構成する絶縁基体上面に設
けたメタライズ金属層の各々に外部リード端子を個々に
ロウ付けする場合、各メタライズ金属層と外部リード端
子との位麿合わせが一度にでき、外部リード端子のロウ
付けの作業性が極めて容易となる。According to the semiconductor device housing package of the present invention, each of the external lead terminals has one end commonly connected to the inner side of the annular band-shaped metal member, and its position is regulated by the band-shaped metal member. Therefore, when the external lead terminals are individually brazed to each of the metallized metal layers provided on the upper surface of the insulating base constituting the recording container for accommodating the semiconductor element, each metallized metal layer and the external lead terminals are required. Can be adjusted at one time, and the workability of brazing the external lead terminals becomes extremely easy.
【００３０】また各外部リード端子は環状の帯状金属部
材に共通に連結していることから外部リード端子の外表
面に耐蝕性に優れた金属を電解メッキにより層着させる
際、電解メッキのための電極を帯状金属部材に接続する
だけですべての外部リード端子にメッキ用の電界を共通
に印加することができ耐蝕性金属の層着の作業性が極め
て容易となる。Further, since each external lead terminal is commonly connected to the annular band-shaped metal member, when a metal having excellent corrosion resistance is layered on the outer surface of the external lead terminal by electrolytic plating, the external lead terminal is used for electrolytic plating. By simply connecting the electrodes to the strip-shaped metal member, an electric field for plating can be commonly applied to all the external lead terminals, and the workability of depositing the corrosion-resistant metal becomes extremely easy.
【００３１】更に複数個の外部リード端子が共通に連結
されて成る環状をなす帯状金属部材の内辺に支持部材を
設け、該支持部材を絶縁基体の下面に当接させるように
なしたことから外部リード端子を絶縁基体の上面に設け
たメタライズ金属層に位置合わせする際、絶縁基体を、
該絶縁基体の下面に当接する支持部材と絶縁基体上面の
メタライズ金属層に載置される外部リード端子２とで挟
持することとなり、その結果、外部リード端子の変移が
有効に防止され、外部リード端子のメタライズ金属層へ
の位置合わせが信頼性の高いものとなる。Further, a support member is provided on the inner side of an annular band-shaped metal member formed by connecting a plurality of external lead terminals in common, and the support member is brought into contact with the lower surface of the insulating base. When aligning the external lead terminals with the metallized metal layer provided on the upper surface of the insulating base,
Since the supporting member is in contact with the lower surface of the insulating substrate and the external lead terminal 2 placed on the metallized metal layer on the upper surface of the insulating substrate, the external lead terminal is effectively prevented from being displaced. Positioning of the terminal to the metallized metal layer is highly reliable.
【００３２】また更に、環状をなす帯状金属部材の内辺
に設けた支持部材が絶縁基体の下面に当接し、絶縁基体
を支持することから絶縁基体の重みが外部リード端子に
印加されて外部リード端子を変形させることもなく、そ
の結果、外部リード端子を所定の外部電気回路に正確、
且つ確実に接続することも可能となる。Further, since the supporting member provided on the inner side of the annular band-shaped metal member abuts on the lower surface of the insulating base and supports the insulating base, the weight of the insulating base is applied to the external lead terminals, so that the external lead terminal is applied. Without deforming the terminals, as a result, the external lead terminals can be accurately
In addition, it is possible to connect securely.
【図１】本考案の半導体素子収納用パッケージに使用さ
れるリードフレームの一実施例を示す平面図である。FIG. 1 is a plan view showing an embodiment of a lead frame used in a package for housing a semiconductor device according to the present invention.
【図２】図１に示すリードフレームを用いて製作した本
考案の半導体素子収納用パッケージの例を示す断面図で
ある。FIG. 2 is a cross-sectional view showing an example of the semiconductor device housing package of the present invention manufactured using the lead frame shown in FIG. 1;
【図３】従来の半導体素子収納用パッケージの断面図で
ある。FIG. 3 is a cross-sectional view of a conventional semiconductor element storage package.
【図４】従来の半導体素子収納用パッケージに使用され
るリードフレームの平面図である。FIG. 4 is a plan view of a lead frame used in a conventional package for housing a semiconductor element.
１・・・リードフレーム ２・・・外部リード端子 ３・・・帯状金属部材 ４・・・支持部材 DESCRIPTION OF SYMBOLS 1 ... Lead frame 2 ... External lead terminal 3 ... Strip-shaped metal member 4 ... Support member
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−152161（ＪＰ，Ａ) 特開 平３−22544（ＪＰ，Ａ) 特開 平３−12954（ＪＰ，Ａ) 特開 平１−128889（ＪＰ，Ａ) 特開 昭63−293963（ＪＰ，Ａ) 実開 平５−13064（ＪＰ，Ｕ) ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-63-152161 (JP, A) JP-A-3-22544 (JP, A) JP-A-3-12954 (JP, A) JP-A-1- 128889 (JP, A) JP-A-63-293963 (JP, A) JP-A-5-13064 (JP, U)
Claims (1)
前記半導体素子の各電極が電気的に接続される複数個の
金属層を設けてなる絶縁基体と、複数個の外部リード端
子の各々の一端を環状をなす帯状金属部材の内辺に共通
に連結させてなるリードフレームとから成り、前記絶縁
基体上面に設けた金属層に、各外部リード端子の他端を
ロウ付けしてなる半導体素子収納用パッケージであっ
て、前記外部リード端子が共通に連結されている帯状金
属部材の内辺に一端が絶縁基体の下面に当接する支持部
材を設け、該支持部材と前記外部リード端子とで絶縁基
体を挟持したことを特徴とする半導体素子収納用パッケ
ージ。An insulating base provided on a top surface thereof with a mounting portion on which a semiconductor element is mounted, a plurality of metal layers electrically connected to respective electrodes of the semiconductor element, and a plurality of external lead terminals, respectively. And a lead frame in which one end of each of the external lead terminals is connected to the inner side of an annular band-shaped metal member in common, and the other end of each external lead terminal is brazed to a metal layer provided on the upper surface of the insulating base. An element storage package, wherein a support member having one end in contact with a lower surface of an insulating base is provided on an inner side of a strip-shaped metal member to which the external lead terminal is commonly connected, and the support member and the external lead terminal A package for accommodating a semiconductor element, comprising an insulating base sandwiched therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6665991U JP2549787Y2 (en) | 1991-08-22 | 1991-08-22 | Package for storing semiconductor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6665991U JP2549787Y2 (en) | 1991-08-22 | 1991-08-22 | Package for storing semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH062707U JPH062707U (en) | 1994-01-14 |
| JP2549787Y2 true JP2549787Y2 (en) | 1997-09-30 |
Family
ID=13322253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6665991U Expired - Fee Related JP2549787Y2 (en) | 1991-08-22 | 1991-08-22 | Package for storing semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2549787Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170355103A1 (en) * | 2016-06-10 | 2017-12-14 | C4 Carbides Limited | Drill Bit |
-
1991
- 1991-08-22 JP JP6665991U patent/JP2549787Y2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170355103A1 (en) * | 2016-06-10 | 2017-12-14 | C4 Carbides Limited | Drill Bit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH062707U (en) | 1994-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2549787Y2 (en) | Package for storing semiconductor elements | |
| JP2550492Y2 (en) | Package for storing semiconductor elements | |
| JP2550493Y2 (en) | Package for storing semiconductor elements | |
| JP2550489Y2 (en) | Lead frame | |
| JP2525853Y2 (en) | Lead frame | |
| JP2883235B2 (en) | Package for storing semiconductor elements | |
| JP3181013B2 (en) | Package for storing semiconductor elements | |
| JP3020743B2 (en) | Lead frame | |
| JP2690666B2 (en) | Manufacturing method of semiconductor device storage package | |
| JP3406710B2 (en) | Package for storing semiconductor elements | |
| JPH0713229Y2 (en) | Package for storing semiconductor devices | |
| JP2764340B2 (en) | Package for storing semiconductor elements | |
| JP3301915B2 (en) | Package for housing semiconductor element and method of manufacturing the same | |
| JP2002016161A (en) | Package component, manufacturing method therefor and method for sealing package using the package component | |
| JP2543149Y2 (en) | Package for storing semiconductor elements | |
| JPH0744021Y2 (en) | Package for storing semiconductor devices | |
| JP2849869B2 (en) | Package for storing semiconductor elements | |
| JPH05343589A (en) | Lead frame | |
| JPH05275608A (en) | Semiconductor element housing package | |
| JP2670208B2 (en) | Package for storing semiconductor elements | |
| JP2003224222A (en) | Package for containing semiconductor element | |
| JP3181011B2 (en) | Package for storing semiconductor elements | |
| JPH10107240A (en) | Package for containing image sensor device | |
| KR100626332B1 (en) | Thick film type ceramic package and method for manufacturing the same | |
| JP2703482B2 (en) | Wiring board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |